Title:
REFLECTION-TYPE MASK BLANK, REFLECTION-TYPE MASK, REFLECTION-TYPE MASK BLANK PRODUCTION METHOD, AND REFLECTION-TYPE MASK PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2024/024513
Kind Code:
A1
Abstract:
Provided is a reflection-type mask blank comprising a substrate, a multi-layer reflective film that reflects EUV light, a protective film that protects the multi-layer reflective film, and an absorption film that absorbs the EUV light, in the given order. The protective film contains rhodium as the main component. The multi-layer reflective film comprises an uppermost layer that has silicon and nitrogen and is the uppermost layer closest to the protective film. The uppermost layer has a nitrogen to silicon element ratio (N/Si) of more than 0.00 and less than 1.50, and an oxygen to silicon element ratio (O/Si) of 0.00 or more and less than 0.44.
Inventors:
AKAGI DAIJIRO (JP)
KATO TAKUMA (JP)
TSUKIYAMA KEISHI (JP)
UNO TOSHIYUKI (JP)
HANEKAWA HIROSHI (JP)
OISHI RYUSUKE (JP)
IKEDA SADATATSU (JP)
IWATA YUKIHIRO (JP)
HANZAWA CHIKAKO (JP)
KATO TAKUMA (JP)
TSUKIYAMA KEISHI (JP)
UNO TOSHIYUKI (JP)
HANEKAWA HIROSHI (JP)
OISHI RYUSUKE (JP)
IKEDA SADATATSU (JP)
IWATA YUKIHIRO (JP)
HANZAWA CHIKAKO (JP)
Application Number:
PCT/JP2023/025748
Publication Date:
February 01, 2024
Filing Date:
July 12, 2023
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
G03F1/24
Domestic Patent References:
| WO2011071123A1 | 2011-06-16 |
Foreign References:
| JP2015109366A | 2015-06-11 | |||
| JP2022045936A | 2022-03-23 | |||
| JP2014127630A | 2014-07-07 | |||
| JP2007251205A | 2007-09-27 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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