Title:
RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD
Document Type and Number:
WIPO Patent Application WO/2023/228841
Kind Code:
A1
Abstract:
Provided are: a radiation-sensitive resin composition, from which a resist film capable of exhibiting satisfactory levels of sensitivity, LWR performance, DOF performance, pattern rectangularity, CDU performance and pattern circularity can be formed in the formation of a resist pattern having a high aspect ratio; and a pattern formation method. This radiation-sensitive resin composition comprises a first onium salt compound represented by formula (1), a second onium salt compound represented by formula (2) (excluding a compound corresponding to the first onium salt compound), a resin containing a structural unit having an acid-dissociable group, and a solvent. (In formula (1), R1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 5 carbon atoms, or a group having such a structure that a bivalent hetero-atom-containing group is contained between carbon atoms in a carbon-carbon bond in the aforementioned hydrocarbon group; R2 and R3 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group, or a monovalent fluorinated hydrocarbon group; m represents an integer of 0 to 8; and Z+ represents a monovalent radiation-sensitive onium cation.) (In formula (2), R4 represents a monovalent organic group having 1 to 40 carbon atoms; one of Rf21 and Rf22 represents a fluorine atom and the other represents a fluorine atom or a monovalent fluorinated hydrocarbon group; Ar represents a monovalent organic group having a 5- to 40-membered aromatic ring; R5 to R8 each independently represent a hydrogen atom, a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; n1 and n2 each independently represent an integer of 1 to 6; and X represents a single bond or a bivalent hetero-atom-containing group.)
Inventors:
NEMOTO RYUICHI (JP)
MIYAKE MASAYUKI (JP)
INAMI HAJIME (JP)
FURUKAWA TSUYOSHI (JP)
OTSUKA NOBORU (JP)
MIYAO KENSUKE (JP)
MIYAKE MASAYUKI (JP)
INAMI HAJIME (JP)
FURUKAWA TSUYOSHI (JP)
OTSUKA NOBORU (JP)
MIYAO KENSUKE (JP)
Application Number:
PCT/JP2023/018515
Publication Date:
November 30, 2023
Filing Date:
May 18, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/004; C09K3/00; G03F7/038; G03F7/039; G03F7/20
Foreign References:
| JP2016113450A | 2016-06-23 | |||
| JP2020126143A | 2020-08-20 | |||
| JP2020173438A | 2020-10-22 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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