Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PRODUCTION METHOD FOR OPTICAL SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2024/058079
Kind Code:
A1
Abstract:
Provided is a production method for an optical semiconductor element having a good yield rate due to damage to a wafer by grinding being inhibited. Specifically provided is a production method for an optical semiconductor element, the production method having a step for forming a compound semiconductor layer laminate on one main surface of a compound semiconductor substrate having cleavability and a grinding step for grinding the other main surface of the substrate, wherein the skewness (Ssk) of the ground surface of the substrate in a surface roughness measurement is set to be positive immediately after the grinding step.

More Like This:
WO/2011/119910SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE SOLAR CELL, INCLUDING STRUCTURE AND METHODS OF MANUFACTURE
WO/2009/099418MANUFACTURING PROCESSES FOR LIGHT CONCENTRATING SOLAR MODULE
WO/2012/158215PROCESS FOR FORMING FLEXIBLE SUBSTRATES HAVING PATTERNED CONTACT AREAS
Inventors:
KANEMOTO MAKO (JP)
NAKANO MASAYUKI (JP)
Application Number:
PCT/JP2023/032925
Publication Date:
March 21, 2024
Filing Date:
September 08, 2023
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
DOWA ELECTRONICS MATERIALS CO (JP)
International Classes:
H01L31/18; H01L21/304; H01L31/08; H01L33/00
Domestic Patent References:
WO2022009375A12022-01-13
WO2022054644A12022-03-17
WO2019065397A12019-04-04
Foreign References:
JP2011055014A2011-03-17
JP2020057799A2020-04-09
JPH08321445A1996-12-03
JP2013149746A2013-08-01
US20130244359A12013-09-19
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: BIAXIALLY STRETCHED POLYPROPYLENE FILM, METALLIZED FILM, AND CAPACITOR

Next Patent: ROOT CANAL TREATMENT FILE