PRECURSOR FOR FORMING LANTHANIDE METAL-CONTAINING THIN FILM, METHOD FOR FORMING LANTHANIDE METAL-CONTAINING THIN FILM USING SAME, AND SEMICONDUCTOR ELEMENT INCLUDING LANTHANIDE METAL-CONTAINING THIN FILM

Title:

Document Type and Number:

WIPO Patent Application WO/2024/058624

Kind Code:

A1

Abstract:

The present invention relates to: a precursor for forming a lanthanide metal-containing thin film, the precursor being characterized by comprising a compound represented by chemical formula 1; a method for forming a lanthanide metal-containing thin film using same; and a semiconductor element including the lanthanide metal-containing thin film. The precursor includes a lanthanide metal core, a cyclopentadienyl ligand providing properties such as a low melting point and high volatility, and a novel amidinate ligand that provides high structural stability, low viscosity, high volatility, high thermal stability, and properties such as being a liquid at room temperature or a solid with a low melting point. Therefore, the precursor exhibits physical properties suitable for use in a thin film formation process and thus can be used to form a high-quality thin film.

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Inventors:

OH HAN SOL (KR)
KIM HAN BYUL (KR)
PARK YONG JOO (KR)
RYU BEOM SEOK (KR)
LEE SANG KYUNG (KR)

Application Number:

PCT/KR2023/013986

Publication Date:

March 21, 2024

Filing Date:

September 15, 2023

Export Citation:

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Assignee:

SK TRI CHEM CO LTD (KR)

International Classes:

C23C16/18; C23C16/30; C23C16/34; C23C16/40; C23C16/455; C23C16/50; H01L21/02

Foreign References:

US20160315168A1	2016-10-27
KR20190109142A	2019-09-25
KR20210084297A	2021-07-07
KR20170063092A	2017-06-08
KR20080031935A	2008-04-11

Attorney, Agent or Firm:

LEE, Byong Jin (KR)

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