Title:
POWER SEMICONDUCTOR SWITCHING MODULE
Document Type and Number:
WIPO Patent Application WO/2023/181761
Kind Code:
A1
Abstract:
According to the present invention, a thermal circuit composed of unit cells Uij includes a first heat flow path composed of heat resistors from a heat source to the lower surfaces of chip metal conductors Bij, and a second heat flow path composed of heat capacitors branching from the first heat flow path to the atmosphere on each surface side, the heat capacitors branching at the surface of each of power semiconductor SW chips Sij, die attaches Dij, and the chip metal conductor Bij. With respect to the heat generation of the power semiconductor SW chips Sij at the time of single-pulse energization in an ms range, the thermal impedance of the thermal circuit is set so that the power semiconductor SW chips Sij can be kept at the rated temperature or below by heat dissipation through the entire thermal circuit of the first heat flow path and the second heat flow path.
Inventors:
TANIMOTO SATOSHI (JP)
NAKAMURA TAKASHI (JP)
NISHIOKA KEI (JP)
HANADA TOSHIO (JP)
OKUDA TAKAFUMI (JP)
NAKAMURA TAKASHI (JP)
NISHIOKA KEI (JP)
HANADA TOSHIO (JP)
OKUDA TAKAFUMI (JP)
Application Number:
PCT/JP2023/006298
Publication Date:
September 28, 2023
Filing Date:
February 21, 2023
Export Citation:
Assignee:
NEXFI TECH INC (JP)
International Classes:
H01L25/07; H01L23/36; H01L25/18
Domestic Patent References:
| WO2018207856A1 | 2018-11-15 |
Foreign References:
| JP2014143406A | 2014-08-07 | |||
| JP2007043098A | 2007-02-15 |
Attorney, Agent or Firm:
DELOITTE TOHMATSU IP FIRM (JP)
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