Title:
POWER SEMICONDUCTOR MODULE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/042482
Kind Code:
A1
Abstract:
A semiconductor module (200) comprises: an insulating substrate (10) having a main terminal (1), a conductor layer (11), and a sense terminal (6); an insulating substrate (20) disposed opposite the insulating substrate (10) and having a conductor layer (21); and a sensing spacer conductor (81) which is electrically connected to the sense terminal (6) and electrically connects from the insulating substrate (10) side to the conductor layer (21) of the insulating substrate (20) while keeping an interval between the insulating substrate (10) and the insulating substrate (20). One sensing spacer conductor (81) corresponds to a plurality of semiconductor switching elements (31) to (38).
Inventors:
MASUDA TORU (JP)
IKARASHI DAISUKE (JP)
YASUI KAN (JP)
KUSHIMA TAKAYUKI (JP)
IKARASHI DAISUKE (JP)
YASUI KAN (JP)
KUSHIMA TAKAYUKI (JP)
Application Number:
PCT/JP2022/020544
Publication Date:
March 23, 2023
Filing Date:
May 17, 2022
Export Citation:
Assignee:
HITACHI POWER SEMICONDUCTOR DEVICE LTD (JP)
International Classes:
H01L25/07; H01L25/18; H02M7/48
Domestic Patent References:
| WO2017163612A1 | 2017-09-28 |
Foreign References:
| JP2020018137A | 2020-01-30 | |||
| JP2017017283A | 2017-01-19 | |||
| JP2013138234A | 2013-07-11 |
Attorney, Agent or Firm:
ISONO INTERNATIONAL PATENT OFFICE, P.C. (JP)
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