Title:
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/079846
Kind Code:
A1
Abstract:
A power semiconductor device (100) comprises a heatsink integrated power module (20) formed by integrating a power module and a heatsink with each other, a holding portion which has a box shape and includes a plurality of opening portions (41) formed in one surface connecting an inflow opening and an outflow opening to each other, and a structure support portion (50) which is provided inside the holding portion and receives a load in a direction from the one surface toward the inside of the holding portion to support the one surface. Each of a plurality of the heatsink integrated power modules (20) has a plurality of heat dissipation fins inserted from the opening portion (41) into the inside of the holding portion and an outer peripheral edge portion (1bp) of a heatsink base (1b) is supported on an adjacent region (413) adjacent to the opening portion (41) on the one surface in an in-plane direction of the heatsink base (1b). The structure support portion (50) is disposed at a position corresponding to a gap between the heatsink bases (1b) of the heatsink integrated power modules (20) adjacent to each other in a width direction of the holding portion.
Inventors:
SANDA YASUYUKI (JP)
MORISADA TATSUSHI (JP)
GOTO MASAKI (JP)
MORISADA TATSUSHI (JP)
GOTO MASAKI (JP)
Application Number:
PCT/JP2022/038210
Publication Date:
April 18, 2024
Filing Date:
October 13, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/40
Domestic Patent References:
| WO2012029165A1 | 2012-03-08 |
Foreign References:
| JP2014220334A | 2014-11-20 | |||
| JP2012199596A | 2012-10-18 |
Attorney, Agent or Firm:
TAKAMURA, Jun (JP)
Download PDF: