Title:
POWER SEMICONDUCTOR DEVICE, METHOD FOR MAKING SAME, AND ELECTRIC POWER CONVERTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/138200
Kind Code:
A1
Abstract:
This power semiconductor device (1) comprises a lead frame (3) that includes a die pad (3a). A power semiconductor element (7) and a fluid power converting part (21) are located on one surface of the die pad (3a). An insulation layer (19) is located on another surface of the die pad (3a) opposite to the one surface. The fluid power converting part (21) has a function to convert the fluid power of a mold resin (23), which is injected into a mold when sealing the power semiconductor element (7) and others by use of the mold resin (23), to a biasing force for biasing the die pad (3a) toward the side on which the insulation layer (19) is located. The insulation layer (19) is exposed at a surface of the mold resin (23).
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Inventors:
SAKAMOTO SOICHI (JP)
FUJINO JUNJI (JP)
UOZUMI SHUJI (JP)
FUJINO JUNJI (JP)
UOZUMI SHUJI (JP)
Application Number:
PCT/JP2021/045314
Publication Date:
June 30, 2022
Filing Date:
December 09, 2021
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/28; H01L21/56; H01L23/50
Foreign References:
| JP2005311214A | 2005-11-04 | |||
| JP2018056309A | 2018-04-05 | |||
| JP2001345414A | 2001-12-14 | |||
| JP2011077286A | 2011-04-14 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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