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Patent Searching and Data


Title:
POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/032930
Kind Code:
A1
Abstract:
This polishing liquid contains cerium oxide abrasive grains and ammonium salt, and has a pH of at least 9.00. This polishing method uses the polishing liquid to polish a member to be polished that contains copper. This component manufacturing method enables a component to be obtained by using the member to be polished which has been polished using the polishing method. This semiconductor component manufacturing method enables a semiconductor component to be obtained by using the member to be polished which has been polished using the polishing method.

Inventors:
ARATA SHOGO (JP)
ICHIGE YASUHIRO (JP)
Application Number:
PCT/JP2022/032453
Publication Date:
March 09, 2023
Filing Date:
August 29, 2022
Export Citation:
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Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
WO2011122415A12011-10-06
WO2012165016A12012-12-06
WO2005110679A12005-11-24
Foreign References:
JPH1094955A1998-04-14
US20160068711A12016-03-10
JP2019057615A2019-04-11
JP2002043259A2002-02-08
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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