Title:
POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/032930
Kind Code:
A1
Abstract:
This polishing liquid contains cerium oxide abrasive grains and ammonium salt, and has a pH of at least 9.00. This polishing method uses the polishing liquid to polish a member to be polished that contains copper. This component manufacturing method enables a component to be obtained by using the member to be polished which has been polished using the polishing method. This semiconductor component manufacturing method enables a semiconductor component to be obtained by using the member to be polished which has been polished using the polishing method.
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Inventors:
ARATA SHOGO (JP)
ICHIGE YASUHIRO (JP)
ICHIGE YASUHIRO (JP)
Application Number:
PCT/JP2022/032453
Publication Date:
March 09, 2023
Filing Date:
August 29, 2022
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
WO2011122415A1 | 2011-10-06 | |||
WO2012165016A1 | 2012-12-06 | |||
WO2005110679A1 | 2005-11-24 |
Foreign References:
JPH1094955A | 1998-04-14 | |||
US20160068711A1 | 2016-03-10 | |||
JP2019057615A | 2019-04-11 | |||
JP2002043259A | 2002-02-08 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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