Title:
POLISHING AGENT, ADDITIVE LIQUID AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/080014
Kind Code:
A1
Abstract:
The present invention provides: a polishing agent which contains cerium oxide and a metal salt, and which is capable of polishing a silicon nitride film at a high speed; and a polishing method. The present invention provides: a polishing agent which contains (A) abrasive grains, (B) a metal salt that is poorly soluble in water, and water; and a polishing method wherein a surface to be polished and a polishing pad are brought into contact with each other, while supplying the polishing agent thereto, and polishing is carried out by means of a relative motion of the surface to be polished and the polishing pad. With respect to this polishing method, a surface to be polished of a semiconductor substrate and a polishing pad are brought into contact with each other, while supplying a polishing agent for polishing the surface to be polished containing silicon oxide and/or silicon nitride; and polishing is carried out by means of a relative motion of the surface to be polished and the polishing pad.
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Inventors:
SHIBUYA TOMOHIRO (JP)
OKAMURA YUZO (JP)
OKAMURA YUZO (JP)
Application Number:
PCT/JP2022/039682
Publication Date:
May 11, 2023
Filing Date:
October 25, 2022
Export Citation:
Assignee:
AGC INC (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2018179062A1 | 2018-10-04 |
Foreign References:
| JP2005503678A | 2005-02-03 | |||
| JP2003059868A | 2003-02-28 | |||
| JP2021158278A | 2021-10-07 | |||
| JPH0922887A | 1997-01-21 |
Attorney, Agent or Firm:
IEIRI Takeshi (JP)
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