Title:
PLASMA TREATMENT DEVICE, POWER SUPPLY SYSTEM, AND FREQUENCY CONTROL METHOD
Document Type and Number:
WIPO Patent Application WO/2024/075596
Kind Code:
A1
Abstract:
The disclosed plasma treatment device comprises a chamber, a substrate-supporting portion, a high-frequency power supply, and a control unit. The substrate-supporting portion is provided inside the chamber. The high-frequency power supply is configured to supply source high-frequency electric power in order to generate plasma from gas within the chamber. The control unit is configured to set the source frequency of the source high-frequency electric power when the source high-frequency electric power is being supplied alone, in accordance with the extent of reflection of the source high-frequency electric power and the source frequency when the source high-frequency electric power has been supplied alone previously, such that the extent of reflection of the source high-frequency electric power is minimized.
Inventors:
KOSHIMIZU CHISHIO (JP)
Application Number:
PCT/JP2023/034969
Publication Date:
April 11, 2024
Filing Date:
September 26, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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