Title:
PHOTOMASK BLANK, PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK
Document Type and Number:
WIPO Patent Application WO/2023/113047
Kind Code:
A1
Abstract:
Provided are: a photomask blank that makes it possible to accurately form a fine resist pattern in a resist film; a method for manufacturing a photomask; and a photomask that is manufactured by means of said method. A mask blank (100) according to the present embodiment is used for creating a phase shift mask (200) upon which exposure light at a wavelength of 200 nm or less is applied, the mask blank comprising a translucent substrate (1), a phase shift film (2), a light-shielding film (3), and a hard mask film (4) in the order stated, wherein the light-shielding film (3) is formed from a Cr-containing material, the hard mask film (4) includes a lower layer (41) positioned on the light-shielding film (3) side and an upper layer (42) constituting the uppermost layer of the hard mask film (4), the lower layer (41) contains at least one selected from among tungsten (W), tellurium (Te), ruthenium (Ru), and compounds of these elements, the upper layer (42) contains tantalum (Ta) or a Ta compound, and said compound contains at least one element selected from among O, N, and C.
Inventors:
MATSUI KAZUAKI (JP)
KOJIMA YOSUKE (JP)
KOJIMA YOSUKE (JP)
Application Number:
PCT/JP2023/003372
Publication Date:
June 22, 2023
Filing Date:
February 02, 2023
Export Citation:
Assignee:
TOPPAN PHOTOMASK CO LTD (JP)
International Classes:
G03F1/32
Domestic Patent References:
| WO2021192734A1 | 2021-09-30 |
Foreign References:
| JP2019179106A | 2019-10-17 | |||
| JP2018072543A | 2018-05-10 | |||
| JP2017223905A | 2017-12-21 |
Attorney, Agent or Firm:
HIROSE Hajime et al. (JP)
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