Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/219046
Kind Code:
A1
Abstract:
A nitride semiconductor device (10) comprises: a nitride semiconductor layer (12); a gate layer (14) formed on the nitride semiconductor layer (12) and including a plurality of main gate parts (18) which, in a plan view, extend in a first direction and are arranged in a second direction perpendicular to the first direction; a first dummy part (24) and a second dummy part (26) formed on the nitride semiconductor layer (12) and extending in the first direction in a plan view; and a passivation layer having a plurality of source openings (34A) and a plurality of drain openings (34B). The gate layer (14), the first dummy part (24), and the second dummy part (26) are each composed of a nitride semiconductor containing acceptor-type impurities. The gate layer (14), the plurality of source openings (34A), and the plurality of drain openings (34B) are disposed between the first dummy part (24) and the second dummy part (26) which are spaced apart from each other in the second direction in a plan view.
Inventors:
OTAKE HIROTAKA (JP)
Application Number:
PCT/JP2023/017197
Publication Date:
November 16, 2023
Filing Date:
May 02, 2023
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/812; H01L21/28; H01L21/337; H01L21/338; H01L29/41; H01L29/417; H01L29/778; H01L29/808
Domestic Patent References:
| WO2021153266A1 | 2021-08-05 | |||
| WO2016042861A1 | 2016-03-24 |
Foreign References:
| JP2011124385A | 2011-06-23 | |||
| JP2021190501A | 2021-12-13 | |||
| JP2016131207A | 2016-07-21 | |||
| JP2020080362A | 2020-05-28 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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