Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/157452
Kind Code:
A1
Abstract:
A nitride semiconductor device (10) includes an electron transit layer (16), an electron supply layer (18), a gate layer (22) containing acceptor impurities, a gate electrode (24), a passivation layer (26), a source electrode, a drain electrode (34), and a field plate electrode (36). The field plate electrode (36) is formed on the passivation layer (26) between the gate layer (22) and the drain electrode (34). The gate layer (22) includes: a ridge portion (40) on which the gate electrode (24) is located; a source-side extension portion (42) that extends from the ridge portion (40); and a drain-side extension portion (44) that extends from the ridge portion (40) to the opposite side from the source-side extension portion (42). The passivation layer (26) includes a field plate non-overlapping region (26RA) that is located directly over the drain-side extension portion (44) and that does not overlap the field plate electrode (36).
Inventors:
OTAKE HIROTAKA (JP)
Application Number:
PCT/JP2022/046702
Publication Date:
August 24, 2023
Filing Date:
December 19, 2022
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
H01L21/28; H01L21/337; H01L21/338; H01L29/41; H01L29/417; H01L29/778; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| WO2020213291A1 | 2020-10-22 |
Foreign References:
| JP2022027722A | 2022-02-14 | |||
| JP2020184609A | 2020-11-12 | |||
| JP2019102756A | 2019-06-24 | |||
| JP2013157407A | 2013-08-15 | |||
| JP2013074279A | 2013-04-22 | |||
| JP2016139718A | 2016-08-04 |
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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