Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/060110
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first III-V nitride-based semiconductor layer, a second III-V nitride-based semiconductor layer, a source electrode and a drain electrode, and a doped nitride-based semiconductor layer. The second III-V nitride-based semiconductor layer is disposed over the first III-V nitride-based semiconductor layer and has a bandgap higher than a bandgap of the first III-V nitride-based semiconductor layer. The source electrode and the drain electrode are disposed over the second III-V nitride-based semiconductor layer. The doped nitride-based semiconductor layer is disposed over the second III-V nitride-based semiconductor layer and between the source electrode and the drain electrode, in which the doped nitride-based semiconductor layer has an aluminum concentration increasing along an upward direction. The gate electrode is disposed over the doped nitride-based semiconductor layer.
More Like This:
| JP2007035905 | NITRIDE SEMICONDUCTOR ELEMENT |
| JPH05114616 | FIELD EFFECT TRANSISTOR |
| JP2007511915 | Strain application semiconductor device |
Inventors:
HAO RONGHUI (CN)
WONG KING YUEN (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2022/120410
Publication Date:
March 28, 2024
Filing Date:
September 22, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778
Foreign References:
| US20090072272A1 | 2009-03-19 | |||
| CN105990106A | 2016-10-05 | |||
| CN104393045A | 2015-03-04 | |||
| CN104465748A | 2015-03-25 | |||
| CN102800572A | 2012-11-28 | |||
| CN101107713A | 2008-01-16 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
Download PDF: