RELATED APPLICATIONS

This application claims benefit of U.S. Patent Application Serial No. 63/201, 513, entitled “Micromagnetic Device and Method of Forming the Same,” filed May 3, 2021, and U.S. Patent Application Serial No. 63/263, 546, entitled “Micromagnetic Device and Method of Forming the Same,” filed November 4, 2021. This application is also related to International Application No. PCT/US2021/070500, entitled “Micromagnetic Device and Method of Forming the Same,” filed May 4, 2021, which claims the benefit of U.S. Patent Application Serial No. 62/704,316, entitled “Micromagnetic Device and Method of Forming the Same,” filed May 4, 2020, U.S. Patent Application Serial No. 62/706,692, entitled “Micromagnetic Device and Method of Forming the Same,” filed September 3, 2020, and U.S. Patent Application Serial No. 63/198,718, entitled “Micromagnetic Device and Method of Forming the Same,” filed November 6, 2020. The aforementioned applications and other references cited herein are all incorporated herein by reference.

FIELD OF THE INVENTION

The present disclosure is directed, in general, to power and signal processing and, in particular, to a micromagnetic device and method of forming the same.

BACKGROUND

A continuing challenge in the design of compact power and signal processing devices for present and future markets is to produce product with smaller sizes and higher operating efficiencies. Prior industrial and research focus has been to produce semiconductor devices with smaller sizes, but has not made comparable progress for micromagnetic devices, which are necessary elements in these circuits. Producing micromagnetic devices, with very small overall dimensions and with low manufacturing costs has been a continuing design challenge.

To meet these challenges, new magnetic alloy compositions should be explored with improved properties and that can accommodate large product runs. New electroplating techniques would also be beneficial to achieve higher levels of magnetic performance and manufacturing repeatability. To achieve a high level of power con version efficiency in end products, micromagnetic devices with thick winding turns would be advantageous.

A further challenge to produce a micromagnetic device with small dimensions is to avoid the production of pattern edge “horns” that tend to form during a thick electroplating process. Current through-photoresist electroplating approaches produce uneven surface features in magnetic or metallic layers that compromise manufacturing yields and affect product reliability in the field. Accordingly, what is needed in the art is a micromagnetic device that addresses these and other design and manufacturing challenges therefor.

SUMMARY

These and other problems are generally solved or circumvented, and technical advantages are generally achieved, by advantageous embodiments of the present disclosure including a micromagnetic device and method of forming the same. In one embodiment, the micromagnetic device includes a first seed layer segment formed over a substrate, and a first electroplated layer segment electroplated over and laterally beyond the first seed layer segment. The micromagnetic device may also include a second seed layer segment formed over the substrate, and a second electroplated layer segment electroplated over and laterally beyond the second seed layer segment. The first seed layer segment is separated from the second seed layer segment by a width to provide a line spacing dimension between the first electroplated layer segment and the second electroplated layer segment. The line spacing dimension provides electrical separation between the first electroplated layer segment and the second electroplated layer segment.

The foregoing has outlined rather broadly the features and technical advantages of the present invention in order that the detailed description of the invention that follows can be better understood. Additional features and advantages of the invention will be described hereinafter, which form the subject of the claims of the invention. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed can be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present invention. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the invention as set forth in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and the advantages thereof, reference is now made to the following descriptions taken in connection with the accompanying drawings, and which:

FIGURE 1 illustrates a block diagram of an embodiment of a power converter including an integrated micromagnetic device;

FIGURE 2 illustrates a schematic diagram of an embodiment of a power train of a power converter including an integrated micromagnetic device;

FIGURE 3 illustrates a cross-sectional view of an embodiment of a micromagnetic device;

FIGURES 4 to 7 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 3 ;

FIGURE 8 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 9 to 16 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 8;

FIGURE 17 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 18 to 25 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 17;

FIGURE 26 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 27 to 36 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 26;

FIGURE 37 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 38 to 49 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 37 ; FIGURE 50 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 51 to 66 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 50;

FIGURE 67 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 68 to 83 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 68;

FIGURE 84 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 85 to 97 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 84;

FIGURE 98 illustrates a drawing showing an example of a roller wrapped with a photosensitive film;

FIGURE 99 illustrates a diagram showing a process configuration employed to laminate the photosensitive film of FIGURE 98 over a substrate;

FIGURE 100 illustrates a diagram of an embodiment of a method of forming a micromagnetic device;

FIGURES 101 to 105 illustrate cross-sectional views of an embodiment of forming winding segments;

FIGURES 106 to 111 illustrate cross-sectional views of another embodiment of forming winding segments;

FIGURE 112 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURE 113 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 114 to 121 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 113; FIGURE 122 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 123 to 128 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 122; FIGURE 129 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 130 to 138 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 129;

FIGURE 139 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 140 to 152 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 139;

FIGURE 153 illustrates a perspective view of the micromagnetic device of FIGURES 139 to 152; FIGURE 154 illustrates a cross-sectional view of another embodiment of a micromagnetic device;

FIGURES 155 to 172 illustrate cross-sectional views of an embodiment of forming the micromagnetic device of FIGURE 154; and

FIGURE 173 illustrates a perspective view of the micromagnetic device of FIGURES 154 to 172.

Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated, and cannot be redescribed in the interest of brevity after the first instance. The FIGURES are drawn to illustrate the relevant aspects of exemplary embodiments. DETAILED DESCRIPTION

The making and using of the present exemplary embodiments are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments described herein are merely illustrative of specific ways to make and use a micromagnetic device.

A device will be described herein with respect to exemplary embodiments in a specific context, namely, a broad class of industrial manufacturing processes for manufacturing a micromagnetic device. The specific embodiments are applicable to processes in many fields including, but are not limited to, manufacturing of micromagnetic devices that may include a metallic structure such as a metallic layer or winding and a magnetic structure.

A sequence of steps to produce a micromagnetic device formed according to the principles of the disclosure will now be described. In the interest of brevity, the details of some processing steps well known in the art may not be included in the descriptive material below. For example, without limitation, cleaning steps such as using deionized water or a reactive ionizing chamber may not be described, generally being ordinary techniques well known in the art. The particular concentration of reagents, the exposure times for photoresists, general processing temperatures, current densities for electroplating processes, chamber operating pressures, chamber gas concentrations, radio frequencies to produce ionized gases, etc., are often ordinary techniques well-known in the art, and will not always be included in the description below. Similarly, alternative reagents and processing techniques to accomplish substantially the same result, for example, the substitution of chemical-vapor deposition for sputtering, etc., may not be identified for each processing step, and such substitutions are included within the broad scope of the disclosure. The dimensions and material compositions of the exemplary embodiment described below also may be altered in alternative designs to meet particular design objectives, and are included within the broad scope of the disclosure.

Referring initially to FIGURE 1, illustrated is a block diagram of an embodiment of a power converter including an integrated micromagnetic device. The power converter includes a power train 110 coupled to a source of electrical power (represented by a battery) for providing an input voltage Vin for the power converter. The power converter also includes a controller 120 and a driver 130, and provides power to a system (not shown) such as a microprocessor coupled to an output thereof. The power train 110 may employ a buck converter topology as illustrated and described with respect to FIGURE 2 below. Of course, any number of converter topologies may benefit from the use of an integrated micromagnetic device constructed according to the principles of the disclosure and are well within the broad scope thereof.

The power train 110 receives an input voltage Vin at an input thereof and provides a regulated output characteristic (e.g., an output voltage V _out ) to power a microprocessor or other load coupled to an output of the power converter. The controller 120 may be coupled to a voltage reference representing a desired characteristic such as a desired system voltage from an internal or external source associated with the microprocessor, and to the output voltage V _out of the power converter. In accordance with the aforementioned characteristics, the controller 120 provides a signal S _PWM to control a duty cycle and a frequency of at least one power switch of the power train 110 to regulate the output voltage V _out or another characteristic thereof by periodically coupling the integrated micromagnetic device to the input voltage Vin.

In accordance with the aforementioned characteristics, a drive signal(s) [e.g., a first gate drive signal PG with duty cycle D functional for a P-channel metal-oxide semiconductor field-effect transistor (“MOSFET”) (referred to as a “PMOS”) power switch and a second gate drive signal NG with complementary duty cycle 1-D functional for a N-channel MOSFET (referred to as an “NMOS”) power switch] is provided by the driver 130 to control a duty cycle and a frequency of one or more power switches of the power converter, preferably to regulate the output voltage Vout thereof.

Turning now to FIGURE 2, illustrated is a schematic diagram of an embodiment of a power train of a power converter including an integrated micromagnetic device. While in the illustrated embodiment the power train employs a buck converter topology, those skilled in the art should understand that other converter topologies such as a forward converter topology or an active clamp topology are well within the broad scope of the invention. The power train of the power converter receives an input voltage Vin (e.g., an unregulated input voltage) from a source of electrical power (represented by a battery) at an input thereof and provides a regulated output voltage V _ou t to power, for instance, a microprocessor at an output of the power converter. In keeping with the principles of a buck converter topology, the output voltage V _ou t is generally less than the input voltage Vin such that a switching operation of the power converter can regulate the output voltage Vout- A main power switch Qmain, (e.g., a PMOS switch) is enabled to conduct by a gate drive signal PG for a primary interval (generally co-existent with a duty cycle “D” of the main power switch Qmain,) and couples the input voltage Vin to an output filter inductor L _out , which may be advantageously formed as a micromagnetic device. During the primary interval, an inductor current I _LOUI flowing through the output filter inductor L _out increases as a current flows from the input to the output of the power train. An ac component of the inductor current Lout is filtered by an output capacitor C _ou t·

During a complementary interval (generally co-existent with a complementary duty cycle “1-D” of the main power switch Qmain), the main power switch Qmain is transitioned to a non-conducting state and an auxiliary power switch Q _aux (e.g., an NMOS switch) is enabled to conduct by a gate drive signal NG. The auxiliary power switch Q _aux provides a path to maintain a continuity of the inductor current L _out flowing through the micromagnetic output filter inductor L _ou t· During the complementary interval, the inductor current Lout through the output filter inductor L _ou t decreases. In general, the duty cycle of the main and auxiliary power switches Qmain, Q _aux may be adjusted to maintain a regulation of the output voltage V _ou t of the power converter. Those skilled in the art should understand, however, that the conduction periods for the main and auxiliary power switches Qmain,, Qa _UX may be separated by a small time interval to avoid cross conduction therebetween and beneficially to reduce the switching losses associated with the power converter.

Turning now to FIGURE 3, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 300. The micromagnetic device 300 is formed on a substrate 310 with an adhesive layer 320 formed thereover. A seed layer 330 is formed over the adhesive layer 320 and a magnetic layer 340 is formed over the seed layer 330. A protective layer 350 is thereafter formed above the magnetic layer 340. Turning now to FIGURES 4 to 7, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 300 of FIGURE 3. Beginning with FIGURE 4, the micromagnetic device 300 is constructed on a rigid or flexible substrate 310 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. An adhesive layer 320 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 310 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 5, a seed layer 330 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the adhesive layer 320 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The seed layer 330 forms a conductive layer onto which a magnetic layer 340 will be deposited in a following processing step. The thickness of the seed layer 330 is in the range 1000-4000 A preferably about 1500 A. The seed layer 330 may include multiple layers of like or different materials that can serve as a seed layer.

Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 6, a magnetic layer 340 is deposited by a wet-bath electroplating process on the seed layer 330. The magnetic layer 340 may include boron in addition to iron, cobalt and phosphorous. The thickness of the magnetic layer 340 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other end product.

Regarding the magnetic layer 340, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The magnetic layer 340 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The magnetic layer 340 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the magnetic layer 340 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 7, a protective layer 350 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the magnetic layer 340 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 300 is rinsed with carbon dioxide (“CCk’ -saturated, de-ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 350 over the magnetic layer 340. Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (300) includes a substrate (310), an adhesive layer (320) over the substrate (310), a seed layer (330) over the adhesive layer (320), and a magnetic layer (340, e.g., 0.1 to 15 microns in thickness) over the seed layer (330) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g., 70 - 95 atomic percent) of the magnetic alloy.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy. The adhesive layer (320) may include at least one of nickel, chromium, titanium, and titanium tungsten.

The seed layer (330) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The seed layer (330) forms a conductive layer onto which the magnetic layer (340) is formed. The micromagnetic device (300) further includes a protective layer (350) over the magnetic layer (340). The protective layer (350) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 8, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 400. The micromagnetic device 400 is formed on a substrate 410 with a first adhesive layer 420 formed thereover. A first seed layer 430 is formed over the first adhesive layer 420 and a first magnetic layer 440 is formed over the first seed layer 430. An insulating layer 450 is formed over the first magnetic layer 440. To accommodate multiple magnetic layers (e.g., two magnetic layers in the present embodiment), a second adhesive layer 460 is formed over the insulating layer 450, a second seed layer 470 is formed over the second adhesive layer 460 and a second magnetic layer 480 is formed over the second seed layer 470. A protective layer 490 is thereafter formed above the second magnetic layer 480.

Turning now to FIGURES 9 to 16, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 400 of FIGURE 8. Beginning with FIGURE 9, the micromagnetic device 400 is constructed on a rigid or flexible substrate 410 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 420 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 410 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 10, a first seed layer 430 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 420 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 430 forms a conductive layer onto which a first magnetic layer 440 will be deposited in a following processing step.

The thickness of the first seed layer 430 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 430 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 11 , a first magnetic layer 440 is deposited by a wet-bath electroplating process on the first seed layer 430. The first magnetic layer 440 may include boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer 440 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product. Regarding the first magnetic layer 440, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer 440 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 440 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer 440 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 12, an insulating layer 450 is deposited on the first magnetic layer 450. The insulating layer 450 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the insulating layer 450 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the insulating layer 450 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the insulating layer 450 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The insulating layer 450 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the first magnetic layer 440, which is then hard cured by heating or other means. The insulating layer 450 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the insulating layer 450 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer 450 in the micromagnetic device 400, thereby simplifying the total manufacturing process.

Turning now to FIGURE 13, a second adhesive layer 460 is formed over the insulating layer 450. The second adhesive layer 460 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on the insulating layer 450 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 14, a second seed layer 470 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 460 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 470 forms a conductive layer onto which a second magnetic layer 480 will be deposited in a following processing step. The thickness of the second seed layer 470 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 470 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 15, a second magnetic layer 480 is deposited by a wet- bath electroplating process on the second seed layer 470. The second magnetic layer 480 includes boron in addition to iron, cobalt and phosphorous. The thickness of the second magnetic layer 480 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product. The second magnetic layer 480 has analogous properties to the first magnetic layer 440 as described above. As mentioned above, multiple magnetic layers with the corresponding intervening and surrounding layers may be incorporated into the micromagnetic device 400. The same principle applies to other micromagnetic devices disclosed herein. Also, as an example of a multi-core magnetic device, see International Publication No. WO2017/205644, entitled “Laminated Magnetic Cores,” by Allen, et ai, which is incorporated herein by reference.

Turning now to FIGURE 16, a protective layer 490 such as titanium, titanium tungsten (“TiW”) , chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the second magnetic layer 480 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 400 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de- ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 490 over the second magnetic layer 480.

Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (400) includes a substrate (410), a first adhesive layer (420) and a first seed layer (430) over the substrate (410), and a first magnetic layer (440, e.g., 0.1 to 15 microns in thickness) over the first adhesive layer (420) and first seed layer (430) from a magnetic alloy including iron, cobalt, boron and phosphorous. The micromagnetic device (400) also includes a second adhesive layer (460) and second seed layer (470) over the first magnetic layer (440), and second magnetic layer (480, e.g., 0.1 to 15 microns in thickness) over the second adhesive layer (460) and second seed layer (470) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g., 70 - 95 atomic percent) of the magnetic alloy.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy. The first and second adhesive layers (420, 460) may include at least one of nickel, chromium, titanium, and titanium tungsten.

The first and second seed layers (430, 470) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first and second seed layers (430, 470) form a conductive layer onto which the first and second magnetic layers (440, 480), respectively, are formed.

The micromagnetic device (400) also includes an insulting or semi-insulating layer (450) between the first and second magnetic layers (440, 480). The insulating layer (450, e.g., a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The micromagnetic device (400) further includes a protective layer (490) over the second magnetic layer (480). The protective layer (490) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 17, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 500. The micromagnetic device 500 is formed on a substrate 510 with a first adhesive layer 520 formed thereover. A first seed layer 530 is formed over the first adhesive layer 520 and a magnetic layer 540 is formed over the first seed layer 530. A protective layer 550 is formed over the magnetic layer 540, and an insulating layer 560 is formed over the protective layer 550. A second adhesive layer 570 is formed over the insulating layer 560, a second seed layer 580 is formed over the second adhesive layer 570 and a metallic layer 590 is formed over the second seed layer 580.

Turning now to FIGURES 18 to 25, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 500 of FIGURE 17. Beginning with FIGURE 18, the micromagnetic device 500 is constructed on a rigid or flexible substrate 510 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 520 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 510 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 19, a first seed layer 530 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 520 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 530 forms a conductive layer onto which a first magnetic layer 540 will be deposited in a following processing step.

The thickness of the first seed layer 530 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 530 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 20, a magnetic layer 540 is deposited by a wet-bath electroplating process on the first seed layer 530. The magnetic layer 540 includes boron in addition to iron, cobalt and phosphorous. The thickness of the magnetic layer 540 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the magnetic layer 540, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The magnetic layer 540 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The magnetic layer 540 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the magnetic layer 540 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 21, a protective layer 550 such as titanium, titanium tungsten (“TiW”) , chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the magnetic layer 540 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 500 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de-ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 550 over the magnetic layer 540.

Turning now to FIGURE 22, an insulating layer 560 is deposited on the protective layer 550. The insulating layer 560 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the insulating layer 560 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the insulating layer 560 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the insulating layer 560 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The insulating layer 560 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the protective layer 550, which is then hard cured by heating or other means. The insulating layer 560 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the insulating layer 560 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer 560 in the micromagnetic device 500, thereby simplifying the total manufacturing process.

Turning now to FIGURE 23, a second adhesive layer 570 is formed over the insulating layer 560. The second adhesive layer 570 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on the insulating layer 560 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process. Turning now to FIGURE 24, a second seed layer 580 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 570 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 580 forms a conductive layer onto which a metallic layer 590 will be deposited in a following processing step. The thickness of the second seed layer 580 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 580 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 25, a metallic layer 590 is deposited by a wet-bath electroplating process on the second seed layer 580. The metallic layer 590 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer 590 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (500) includes a substrate (510), a first adhesive layer (520) over the substrate (510), a first seed layer (530) over the first adhesive layer (520), and a magnetic layer (540, e.g., 0.1 to 15 microns in thickness) over the first seed layer (530) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g., 70 - 95 atomic percent) of the magnetic alloy. The micromagnetic device (500) also includes a metallic layer (590) over the magnetic layer (540). The metallic layer (590) may be about 20 microns thick formed from copper, gold, aluminum, or other electrically conductive metallic material.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

The micromagnetic device (500) also includes a protective layer (550), an insulting layer (560), and a second adhesive layer (570) and a second seed layer (580) between the magnetic layer (540) and the metallic layer (590). The first and second adhesive layers (520, 570) may include at least one of nickel, chromium, titanium, and titanium tungsten. The first and second seed layers (530, 580) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first and second seed layers (530, 580) form a conductive layer onto which the magnetic layer (540) and the metallic layer (590), respectively, are formed. The insulating layer (560, e.g. , a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The protective layer (550) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 26, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 600. The micromagnetic device 600 is formed on a substrate 605 with a first adhesive layer 610 formed thereover. A first seed layer 615 is formed over the first adhesive layer 610 and a first magnetic layer 620 is formed over the first seed layer 615. A first protective layer 625 is formed over the first magnetic layer 620, and an insulating layer 630 is formed over the first protective layer 625. A second adhesive layer 635 is formed over the insulating layer 630, a second seed layer 640 is formed over the second adhesive layer 635 and a metallic layer 645 is formed over the second seed layer 640. A second magnetic layer 650 is formed over the metallic layer 645, and a second protective layer 655 is formed over the second magnetic layer 650.

Turning now to FIGURES 27 to 36, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 600 of FIGURE 26. Beginning with FIGURE 27, the micromagnetic device 600 is constructed on a rigid or flexible substrate 605 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 610 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 605 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 28, a first seed layer 615 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 610 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 615 forms a conductive layer onto which a first magnetic layer 620 will be deposited in a following processing step.

The thickness of the first seed layer 615 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 615 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 29, a first magnetic layer 620 is deposited by a wet-bath electroplating process on the first seed layer 615. The first magnetic layer 620 includes boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer 620 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the first magnetic layer 620, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer 620 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 620 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer 620 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 30, a first protective layer 625 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the first magnetic layer 620 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 600 is rinsed with carbon dioxide (“CCk’ -saturated, de- ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the first protective layer 625 over the first magnetic layer 620. Turning now to FIGURE 31 , an insulating layer 630 is deposited on the first protective layer 625. The insulating layer 630 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the insulating layer 630 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the insulating layer 630 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the insulating layer 630 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The insulating layer 630 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the first protective layer 625, which is then hard cured by heating or other means. The insulating layer 630 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the insulating layer 630 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer 630 in the micromagnetic device 600, thereby simplifying the total manufacturing process.

Turning now to FIGURE 32, a second adhesive layer 635 is formed over the insulating layer 630. The second adhesive layer 635 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on the insulating layer 630 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 33, a second seed layer 640 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 635 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 640 forms a conductive layer onto which a metallic layer 645 will be deposited in a following processing step. The thickness of the second seed layer 640 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 640 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 34, a metallic layer 645 is deposited by a wet-bath electroplating process on the second seed layer 640. The metallic layer 645 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer 645 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Turning now to FIGURE 35, a second magnetic layer 650 is deposited by a wet- bath electroplating process on the metallic layer 645. The second magnetic layer 650 includes boron in addition to iron, cobalt and phosphorous. The thickness of the second magnetic layer 650 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the second magnetic layer 650, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The second magnetic layer 650 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The second magnetic layer 650 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements. The quaternary alloy employable with the second magnetic layer 650 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 36, a second protective layer 655 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the second magnetic layer 650 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 600 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de-ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the second protective layer 655 over the second magnetic layer 650.

Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (600) includes a substrate (605), a first adhesive layer (610) over the substrate (605), a first seed layer (615) over the first adhesive layer (610), and a first magnetic layer (620, e.g., 0.1 to 15 microns in thickness) over the first seed layer (615) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g., 70 - 95 atomic percent) of the magnetic alloy. The micromagnetic device (600) includes a metallic layer (645) over the first magnetic layer (620). The metallic layer (645) may be about 20 microns thick formed from copper, gold, aluminum, or other electrically conductive metallic material.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

The micromagnetic device (600) also includes a first protective layer (625), an insulting layer (630), a second adhesive layer (635) and a second seed layer (640) between the first magnetic layer (620) and the metallic layer (645). The micromagnetic device (600) also includes a second magnetic layer (650, analogous to the first magnetic layer 620) above the metallic layer (645), and a second protective layer (655) above the second magnetic layer (650). The first and second adhesive layers (610, 635) may include at least one of nickel, chromium, titanium, and titanium tungsten. The first and second seed layers (615, 640) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first and second seed layers (615, 640) form a conductive layer onto which the first magnetic layer (620) and the metallic layer (645), respectively, are formed. The insulating layer (630, e.g., a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The first and second protective layers (625, 655) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 37, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 700. The micromagnetic device 700 is formed on a substrate 705 with a first adhesive layer 710 formed thereover. A first seed layer 715 is formed over the first adhesive layer 710, and a first magnetic layer 720 is formed over the first seed layer 715. A first insulating layer 725 is formed over the first magnetic layer 720, and a second adhesive layer 730 is formed over the first insulating layer 725. A second seed layer 735 is formed over the second adhesive layer 730, and a second magnetic layer 740 is formed over the second seed layer 735. A protective layer 745 is formed over the second magnetic layer 740, and a second insulating layer 750 is formed over the protective layer 745. A third adhesive layer 755 is formed over the second insulating layer 750, a third seed layer 760 is formed over the third adhesive layer 755, and a metallic layer 765 is formed over the third seed layer 760.

Turning now to FIGURES 38 to 49, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 700 of FIGURE 37. Beginning with FIGURE 38, the micromagnetic device 700 is constructed on a rigid or flexible substrate 705 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 710 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 705 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 39, a first seed layer 715 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 710 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 715 forms a conductive layer onto which a first magnetic layer 720 will be deposited in a following processing step.

The thickness of the first seed layer 715 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 715 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer. Turning now to FIGURE 40, a first magnetic layer 720 is deposited by a wet-bath electroplating process on the first seed layer 715. The first magnetic layer 720 includes boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer 720 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the first magnetic layer 720, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer 720 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 720 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer 720 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 41, a first insulating layer 725 is deposited on the first magnetic layer 720. The first insulating layer 725 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the first insulating layer 725 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the first insulating layer 725 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the first insulating layer 725 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The first insulating layer 725 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the first magnetic layer 720, which is then hard cured by heating or other means. The first insulating layer 725 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the first insulating layer 725 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for a first insulating layer 725 in the micromagnetic device 700, thereby simplifying the total manufacturing process.

Turning now to FIGURE 42, a second adhesive layer 730 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the first insulating layer 725 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 43, a second seed layer 735 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 730 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 735 forms a conductive layer onto which a second magnetic layer 740 will be deposited in a following processing step. The thickness of the second seed layer 735 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 735 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 44, a second magnetic layer 740 is deposited by a wet- bath electroplating process on the second seed layer 735. The second magnetic layer 740 includes boron in addition to iron, cobalt and phosphorous. The thickness of the second magnetic layer 740 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the second magnetic layer 740, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The second magnetic layer 740 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The second magnetic layer 740 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the second magnetic layer 740 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 45, a protective layer 745 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the second magnetic layer 740 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 700 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de- ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 745 over the second magnetic layer 740.

Turning now to FIGURE 46, a second insulating layer 750 is deposited on the protective layer 745. The second insulating layer 750 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the second insulating layer 750 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the second insulating layer 750 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the second insulating layer 750 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing. The second insulating layer 750 can be formed with a deposition of a pattemable layer (e.g., photosensitive photoresist, screen printed polymer or laser pattemable coating with no or very low electric conductivity) on top of the protective layer 745, which is then hard cured by heating or other means. The second insulating layer 750 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the second insulating layer 750 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for a second insulating layer 750 in the micromagnetic device 700, thereby simplifying the total manufacturing process.

Turning now to FIGURE 47, a third adhesive layer 755 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the second insulating layer 750 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 48, a third seed layer 760 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the third adhesive layer 755 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The third seed layer 760 forms a conductive layer onto which a metallic layer 765 will be deposited in a following processing step. The thickness of the third seed layer 760 is in the range 1000-4000 A preferably about 1500 A. The third seed layer 760 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 49, a metallic layer 765 is deposited by a wet-bath electroplating process on the third seed layer 760. The metallic layer 765 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer 765 is, without limitation, about 20 microns (“pm”) (<?·£·, 0-02 - 100 microns). Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (700) includes a substrate (705), a first adhesive layer (710) over the substrate (705), a first seed layer (715) over the first adhesive layer (710), and a first magnetic layer (720, e.g., 0.1 to 15 microns in thickness) over the first seed layer (7150 from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g., 70 - 95 atomic percent) of the magnetic alloy. The micromagnetic device (700) includes a second magnetic layer (740) analogous to and above the first magnetic layer (720) and a metallic layer (765) over the second magnetic layer (740).

The metallic layer (765) may be about 20 microns thick formed from copper, gold, aluminum, or other electrically conductive metallic material.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

The micromagnetic device (700) also includes a first insulting layer (725), a second adhesive layer (730) and a second seed layer (735) between the first magnetic layer (725) and the second magnetic layer (740). The micromagnetic device (700) also includes a protective layer (745), a second insulating layer (750), a third adhesive layer (755) and a third seed layer (760) between the second magnetic layer (740) and the metallic layer (765). The first, second and third adhesive layers (710, 730, 755) may include at least one of nickel, chromium, titanium, and titanium tungsten.

The first, second and third seed layers (715, 735, 760) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first, second and third seed layers (715, 735, 760) form a conductive layer onto which the first and second magnetic layers (720, 740) and the metallic layer (765) are formed. The first and second insulating layers (725, 750, e.g., a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The protective layer (745) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 50, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 800. The micromagnetic device 800 is formed on a substrate 805 with a first adhesive layer 810 formed thereover. A first seed layer 815 is formed over the first adhesive layer 810, and a first metallic layer 820 is formed over the first seed layer 815. A first insulating layer 825 is formed over the first metallic layer 820, and a second adhesive layer 830 is formed over the first insulating layer 825. A second seed layer 835 is formed over the second adhesive layer 830, and a first magnetic layer 840 is formed over the second seed layer 835. A second insulating layer 845 is formed over the first magnetic layer 840, and a third adhesive layer 850 is formed over the second insulating layer 845. A third seed layer 855 is formed over the third adhesive layer 850, and a second magnetic layer 860 is formed over the third seed layer 855. A protective layer 865 is formed over the second magnetic layer 860, and a third insulating layer 870 is formed over the protective layer 865. A fourth adhesive layer 875 is formed over the third insulating layer 870, a fourth seed layer 880 is formed over the fourth adhesive layer 875, and a second metallic layer 885 is formed over the fourth seed layer 880.

Turning now to FIGURES 51 to 66, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 800 of FIGURE 50. Beginning with FIGURE 51, the micromagnetic device 800 is constructed on a rigid or flexible substrate 805 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 810 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 805 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process. Turning now to FIGURE 52, a first seed layer 815 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 810 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 815 forms a conductive layer onto which a first metallic layer 820 will be deposited in a following processing step.

The thickness of the first seed layer 815 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 815 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 53, the first metallic layer 820 is deposited by a wet-bath electroplating process on the first seed layer 815. The first metallic layer 820 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the first metallic layer 820 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Turning now to FIGURE 54, a first insulating layer 825 is deposited on the first metallic layer 820. The first insulating layer 825 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the first insulating layer 825 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the first insulating layer 825 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the first insulating layer 825 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The first insulating layer 825 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the first metallic layer 820, which is then hard cured by heating or other means. The first insulating layer 825 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the first insulating layer 825 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for the first insulating layer 825 in the micromagnetic device 800, thereby simplifying the total manufacturing process.

Turning now to FIGURE 55, a second adhesive layer 830 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the first insulating layer 825 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 56, a second seed layer 835 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 830 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 835 forms a conductive layer onto which a first magnetic layer 840 will be deposited in a following processing step. The thickness of the second seed layer 835 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 835 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 57, a first magnetic layer 840 is deposited by a wet-bath electroplating process on the second seed layer 835. The first magnetic layer 840 includes boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer 840 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the first magnetic layer 840, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer 840 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 840 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer 840 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 58, a second insulating layer 845 is deposited on the first magnetic layer 840. The second insulating layer 845 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the second insulating layer 845 is about, but not limited to, 0.02 to 5 microns (“pm”). The thickness of the second insulating layer 845 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the second insulating layer 845 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The second insulating layer 845 can be formed with a deposition of a pattemable layer (e.g., photosensitive photoresist, screen printed polymer or laser pattemable coating with no or very low electric conductivity) on top of the first magnetic layer 840, which is then hard cured by heating or other means. The second insulating layer 845 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the second insulating layer 845 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for the second insulating layer 845 in the micromagnetic device 800, thereby simplifying the total manufacturing process.

Turning now to FIGURE 59, a third adhesive layer 850 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the second insulating layer 845 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 60, a third seed layer 855 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the third adhesive layer 850 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The third seed layer 855 forms a conductive layer onto which a second magnetic layer 860 will be deposited in a following processing step. The thickness of the third seed layer 855 is in the range 1000-4000 A preferably about 1500 A. The third seed layer 855 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 61, a second magnetic layer 860 is deposited by a wet- bath electroplating process on the third seed layer 855. The second magnetic layer 860 includes boron in addition to iron, cobalt and phosphorous, and may include analogous features to the first magnetic layer 820 described above.

Turning now to FIGURE 62, a protective layer 865 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the second magnetic layer 860 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 800 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de- ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 865 over the second magnetic layer 860.

Turning now to FIGURE 63, a third insulating layer 870 is deposited on the protective layer 865. The third insulating layer 870 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the third insulating layer 870 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the third insulating layer 870 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the third insulating layer 870 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The third insulating layer 870 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the protective layer 865, which is then hard cured by heating or other means. The third insulating layer 870 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the third insulating layer 870 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for a third insulating layer 870 in the micromagnetic device 800, thereby simplifying the total manufacturing process. Turning now to FIGURE 64, a fourth adhesive layer 875 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the third insulating layer 870 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 65, a fourth seed layer 880 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the fourth adhesive layer 875 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The fourth seed layer 880 forms a conductive layer onto which a second metallic layer 885 will be deposited in a following processing step. The thickness of the fourth seed layer 880 is in the range 1000-4000 A preferably about 1500 A. The fourth seed layer 880 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 66, a second metallic layer 885 is deposited by a wet- bath electroplating process on the fourth seed layer 880. The second metallic layer 885 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the second metallic layer 885 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (800) includes a substrate (805), a first adhesive layer (810) over the substrate (805), a first seed layer (815) over the first adhesive layer (810), and a first metallic layer (820) over the first seed layer (815). The micromagnetic device (800) also includes first and second magnetic layers (840, 860, e.g., 0.1 to 15 microns in thickness) over the first metallic layer (820) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g. , 70 - 95 atomic percent) of the magnetic alloy.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

The micromagnetic device (800) also includes a second metallic layer (885) over the second magnetic layer (860). The first and second metallic layers (820, 885) may be about 20 microns thick formed from copper, gold, aluminum, or other electrically conductive metallic material.

The micromagnetic device (800) also includes a first insulting layer (825), a second adhesive layer (830) and a second seed layer (835) between the first metallic layer (820) and the first magnetic layer (840). The micromagnetic device (800) also includes a second insulting layer (845), a third adhesive layer (850) and a third seed layer (855) between the first magnetic layer (840) and the second magnetic layer (860). The micromagnetic device (800) also includes a protective layer (865), a third insulting layer (870), a fourth adhesive layer (875) and a fourth seed layer (880) between the second magnetic layer (860) and the second metallic layer (885). The first, second, third and fourth adhesive layers (810, 830, 850, 875) may include at least one of nickel, chromium, titanium, and titanium tungsten.

The first, second, third and fourth seed layers (815, 835, 855, 880) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first, second, third and fourth seed layers (815, 835, 855, 880) form a conductive layer onto which the first and second magnetic layers (840, 860) and the first and second metallic layers (820, 885) are formed. The first, second and third insulating layers (825, 845, 870, e.g., a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The protective layer (865) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 67, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 900. The micromagnetic device 900 is formed on a substrate 905 with a first adhesive layer 910 formed thereover. A first seed layer 915 is formed over the first adhesive layer 910, and a first metallic layer 920 is formed over the first seed layer 915. A first insulating layer 925 is formed over the first metallic layer 920, and a second adhesive layer 930 is formed over the first insulating layer 925. A second seed layer 935 is formed over the second adhesive layer 930, and a first magnetic layer 940 is formed over the second seed layer 935. A first interface layer 945 is formed over the first magnetic layer 940, a second insulating layer 950 is formed over the first interface layer 945, and a second interface layer 955 is formed over the second insulating layer 950. A second magnetic layer 960 is formed over the second interface layer 955, a protective layer 965 is formed over the second magnetic layer 960, and a third insulating layer 970 is formed over the protective layer 965. A third adhesive layer 975 is formed over the third insulating layer 970, a third seed layer 980 is formed over the third adhesive layer 975, and a second metallic layer 985 is formed over the third seed layer 980.

Turning now to FIGURES 68 to 83, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 900 of FIGURE 67. Beginning with FIGURE 68, the micromagnetic device 900 is constructed on a rigid or flexible substrate 905 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 910 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 905 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 69, a first seed layer 915 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 910 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 915 forms a conductive layer onto which a first metallic layer 920 will be deposited in a following processing step.

The thickness of the first seed layer 915 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 915 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 70, the first metallic layer 920 is deposited by a wet-bath electroplating process on the first seed layer 915. The first metallic layer 920 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the first metallic layer 920 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Turning now to FIGURE 71, a first insulating layer 925 is deposited on the first metallic layer 920. The first insulating layer 925 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the first insulating layer 925 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the first insulating layer 925 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the first insulating layer 925 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The first insulating layer 925 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the first metallic layer 920, which is then hard cured by heating or other means. The first insulating layer 925 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the first insulating layer 925 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for the first insulating layer 925 in the micromagnetic device 900, thereby simplifying the total manufacturing process.

Turning now to FIGURE 72, a second adhesive layer 930 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the first insulating layer 925 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 73, a second seed layer 935 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 930 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 935 forms a conductive layer onto which a first magnetic layer 940 will be deposited in a following processing step. The thickness of the second seed layer 935 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 935 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 74, a first magnetic layer 940 is deposited by a wet-bath electroplating process on the second seed layer 935. The first magnetic layer 940 includes boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer 940 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the first magnetic layer 940, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer 940 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 940 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer 940 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 microns mht thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 75, a first interface layer 945 is deposited on the first magnetic layer 940. The first interface layer 945 is used to enhance the integration of an insulting layer (e.g., the second insulating layer 950) such as a semi-insulating layer (e.g., hard baked photoresist or polypyrrole) with a low level of electrical conductivity when deposited by an electroplating process. The first interface layer 945 may be, without limitation, gold, nickel, nickel-iron, cobalt or molybdenum or a combination of consecutive layers of the above and is deposited by employing an electroplating or electroless process. The thickness of the interface layer 945 is in the range 100 A - 5000 A preferably about 200 A. Turning now to FIGURE 76, the second insulating layer 950 is deposited on the first interface layer 945. The second insulating layer 950 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the insulating layer 450 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the second insulating layer 950 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the second insulating layer 950 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The second insulating layer 950 can be formed with a deposition of a pattemable layer (e.g., photosensitive photoresist, screen printed polymer or laser pattemable coating with no or very low electric conductivity) on top of the first interface layer 945, which is then hard cured by heating or other means. The second insulating layer 950 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the second insulating layer 950 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for the second insulating layer 950 in the micromagnetic device 900, thereby simplifying the total manufacturing process.

Turning now to FIGURE 77, a second interface layer 955 is deposited on the second insulating layer 950. The second interface layer 955 may include analogous features to the first interface layer 945 described above. The arrow indicates that the intervening interface layers 945, 955, and insulating layer 950 can be repeated depending on the number of magnetic layers. It should be understood that the same principle applies to the other micromagnetic devices disclosed herein. In other words, multiple magnetic layers with the corresponding intervening and surrounding layers may be incorporated into any of the micromagnetic devices disclosed herein. Other layers such as the metallic layers may be repeated as well. Turning now to FIGURE 78, a second magnetic layer 960 is deposited by a wet- bath electroplating process on the second interface layer 955. The second magnetic layer 960 includes boron in addition to iron, cobalt and phosphorous, and may include analogous features to the first magnetic layer 940 described above.

Turning now to FIGURE 79, a protective layer 965 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on the second magnetic layer 960 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 900 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de-ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 965 over the second magnetic layer 960.

Turning now to FIGURE 80, a third insulating layer 970 is deposited on the protective layer 965. The third insulating layer 970 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the third insulating layer 970 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the third insulating layer 970 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the third insulating layer 970 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The third insulating layer 970 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the protective layer 965, which is then hard cured by heating or other means. The third insulating layer 970 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the third insulating layer 970 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for a third insulating layer 970 in the micromagnetic device 900, thereby simplifying the total manufacturing process. Turning now to FIGURE 81, a third adhesive layer 975 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness over the third insulating layer 970 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 82, a third seed layer 980 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the third adhesive layer 975 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The third seed layer 980 forms a conductive layer onto which a second metallic layer 985 will be deposited in a following processing step. The thickness of the third seed layer 980 is in the range 1000-4000 A preferably about 1500 A. The third seed layer 980 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 83, a second metallic layer 985 is deposited by a wet- bath electroplating process on the third seed layer 980. The second metallic layer 985 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the second metallic layer 985 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (900) includes a substrate (905), a first adhesive layer (910) over the substrate (905), a first seed layer (915) over the first adhesive layer (910), and a first metallic layer (920) over the first seed layer (915). The micromagnetic device (900) also includes first and second magnetic layers (940, 960, e.g., 0.1 to 15 microns in thickness) over the first metallic layer (920) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g. , 70 - 95 atomic percent) of the magnetic alloy.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

The micromagnetic device (900) also includes a second metallic layer (985) over the second magnetic layer (960). The first and second metallic layers (920, 995) may be about 20 microns thick formed from copper, gold, aluminum, or other electrically conductive metallic material.

The micromagnetic device (900) also includes a first insulting layer (925), a second adhesive layer (930) and a second seed layer (935) between the first metallic layer (920) and the first magnetic layer (940). The micromagnetic device (900) also includes a first interface layer (945), a second insulting layer (950) and a second interface layer (955) between the first magnetic layer (940) and the second magnetic layer (960). The micromagnetic device (900) also includes a protective layer (965), a third insulting layer (970), a third adhesive layer (975) and a third seed layer (980) between the second magnetic layer (960) and the second metallic layer (985). The first, second and third adhesive layers (910, 930, 970) may include at least one of nickel, chromium, titanium, and titanium tungsten.

The first, second and third seed layers (915, 935, 980) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first, second and third seed layers (915, 935, 980) form a conductive layer onto which the first magnetic layer (940) and the first and second metallic layers (920, 985) are formed. The first, second and third insulating layers (925, 950, 970, e.g., a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The first and second interface layers (945, 955) may include gold, nickel, nickel-iron, cobalt or molybdenum or a combination of consecutive layers of the above. The protective layer (965) may include at least one of titanium, titanium tungsten, chromium, and nickel.

Turning now to FIGURE 84, illustrated is a cross-sectional view of an embodiment of a micromagnetic device 1000. The micromagnetic device 1000 is formed on a substrate 1010 with a first adhesive layer 1010 formed thereover. A first seed layer 1015 is formed over the first adhesive layer 1010 and a first magnetic layer 1020 is formed over the first seed layer 1015. A first protective layer 1025 is formed over the first magnetic layer 1020, and a first insulating layer 1030 is formed over the first protective layer 1025. A second adhesive layer 1035 is formed over the first insulating layer 1030, a second seed layer 1040 is formed over the second adhesive layer 1035 and a metallic layer 1045 is formed over the second seed layer 1040. A second insulating layer 1050 is formed over the metallic layer 1045, and a third adhesive layer 1055 is formed over the second insulating layer 1050. A third seed layer 1060 is formed over the a third adhesive layer 1055, a second magnetic layer 1065 is formed over the third seed layer 1060, and a second protective layer 1070 is formed over the second magnetic layer 1065.

Turning now to FIGURES 85 to 97, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 1000 of FIGURE 84. Beginning with FIGURE 85, the micromagnetic device 1000 is constructed on a rigid or flexible substrate 1005 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 1010 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 1005 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 86, a first seed layer 1015 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 1010 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 1015 forms a conductive layer onto which a first magnetic layer 1020 will be deposited in a following processing step. The thickness of the first seed layer 1015 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 1015 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 87, a first magnetic layer 1020 is deposited by a wet- bath electroplating process on the first seed layer 1015. The first magnetic layer 1020 includes boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer 1020 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the first magnetic layer 1020, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer 1020 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 1020 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer 1020 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 microns mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 88, a first protective layer 1025 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the first magnetic layer 1020 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 1000 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de-ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the first protective layer 1025 over the first magnetic layer 1020.

Turning now to FIGURE 89, a first insulating layer 1030 is deposited on the first protective layer 1025. The first insulating layer 1030 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the first insulating layer 1030 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the first insulating layer 1030 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the first insulating layer 1030 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The first insulating layer 1030 can be formed with a deposition of a pattemable layer (e.g., photosensitive photoresist, screen printed polymer or laser pattemable coating with no or very low electric conductivity) on top of the first protective layer 1025, which is then hard cured by heating or other means. The first insulating layer 1030 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the first insulating layer 1030 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for a first insulating layer 1030 in the micromagnetic device 1000, thereby simplifying the total manufacturing process.

Turning now to FIGURE 90, a second adhesive layer 1035 is formed over the first insulating layer 1030. The second adhesive layer 1035 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on the first insulating layer 1030 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 91, a second seed layer 1040 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 1035 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 1040 forms a conductive layer onto which a metallic layer 1045 will be deposited in a following processing step. The thickness of the second seed layer 1040 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 1040 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 92, a metallic layer 1045 is deposited by a wet-bath electroplating process on the second seed layer 1040. The metallic layer 1045 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer 1045 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Turning now to FIGURE 93, a second insulating layer 1050 is deposited on the metallic layer 1045. The second insulating layer 1050 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the second insulating layer 1050 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the second insulating layer 1050 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the second insulating layer 1050 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The second insulating layer 1050 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the metallic layer 1045, which is then hard cured by heating or other means. The second insulating layer 1050 can be a semi- insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the second insulating layer 1050 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for a second insulating layer 1050 in the micromagnetic device 1000, thereby simplifying the total manufacturing process.

Turning now to FIGURE 94, a third adhesive layer 1055 is formed over the second insulating layer 1050. The third adhesive layer 1055 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on the second insulating layer 1050 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 95, a third seed layer 1060 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the third adhesive layer 1055 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The third seed layer 1060 forms a conductive layer onto which a second magnetic layer 1065 will be deposited in a following processing step. The thickness of the third seed layer 1060 is in the range 1000-4000 A preferably about 1500 A. The third seed layer 1060 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 96, a second magnetic layer 1065 is deposited by a wet- bath electroplating process on the third seed layer 1060. The second magnetic layer 1065 includes boron in addition to iron, cobalt and phosphorous. The thickness of the second magnetic layer 1065 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other product.

Regarding the second magnetic layer 1065, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The second magnetic layer 1065 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer 1020 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the second magnetic layer 1065 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 97, a second protective layer 1070 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness on an upper surface of the second magnetic layer 1065 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 1000 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de-ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the second protective layer 1070 over the second magnetic layer 1070.

Thus, a micromagnetic device formed with a quaternary alloy with magnetic properties improved over those currently available, and related method, has been introduced herein formed over a substrate. In an advantageous embodiment, the quaternary alloy includes iron, cobalt, boron and phosphorus, and is an amorphous or nanocrystalline magnetic alloy.

In an embodiment, the micromagnetic device (1000) includes a substrate (1005), a first adhesive layer (1010) over the substrate (1005), a first seed layer (1015) over the first adhesive layer (1010), and a first magnetic layer (1020, e.g., 0.1 to 15 microns in thickness) over the first seed layer (1015) from a magnetic alloy including iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion (e.g., 70 - 95 atomic percent) of the magnetic alloy. The micromagnetic device (1000) also includes a metallic layer (1045) over the first magnetic layer (1020), and a second magnetic layer (1065, analogous to the first magnetic layer 1020) over the metallic layer (1045). The metallic layer (1045) may be about 20 microns thick formed from copper, gold, aluminum, or other electrically conductive metallic material.

The magnetic alloy may also include at least one of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, and copper with a concentration in a range of 1 to 1000 parts per million. The magnetic alloy is an amorphous or nanocrystalline magnetic alloy.

The micromagnetic device (1000) also includes a first protective layer (1025), a first insulting layer (1030), and a second adhesive layer (1035) and a second seed layer (1040) between the first magnetic layer (1020) and the metallic layer (1045). The micromagnetic device (1000) also includes a second insulting layer (1050), and a third adhesive layer (1055) and a third seed layer (1060) between the metallic layer (1045) and the second magnetic layer (1065). The micromagnetic device (1000) also includes a second protective layer (1065) over the second magnetic layer (1065). The first, second and third adhesive layers (1010, 1035, 1055) may include at least one of nickel, chromium, titanium, and titanium tungsten. The first, second and third seed layers (1015, 1040, 1060) may include at least one of copper, gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum and titanium followed by a thin layer of copper or gold. The first, second and third seed layers (1015, 1040, 1060) form a conductive layer onto which the first and second magnetic layers (1020, 1065) and the metallic layer (1045) are formed. The first and second insulating layers (1030, 1050, e.g., a polymer, an aluminum oxide or silicon dioxide) can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The first and second protective layers (1025, 1070) may include at least one of titanium, titanium tungsten, chromium, and nickel.

A process to produce a micromagnetic device formed with thick, metallic winding (or coil) turns on a substrate, such as a thick, copper, spiral winding, employs depositing a photoresist on the substrate. After depositing the photoresist, the substrate is spun to form a thin photoresist layer, and is then dried. Light is directed through a reticle, and is focused with an optical lens on the photoresist to produce a pattern for the copper spiral winding that will be formed to produce the metallic winding. The process of depositing the photoresist, spinning, and drying (/. _<? ., baking and curing the photoresist) is repeated generally at least 2-3 times for a 60-90 micrometers (“pm") thick photoresist to form the desired thickness for the metallic winding on the substrate.

The aforementioned traditional process for forming metallic winding turns that may be 100 pm thick or more inefficiently adds cost and process time to forming the device. There is no current process to quickly produce and with low cost a thick metallic winding such as a thick copper spiral coil on a substrate. Accordingly, a faster and more cost-effective method of manufacturing thick metallic windings on a substrate compared to traditional photolithographic processes would be beneficial.

A dry, thick-film photolithographic process for constructing devices such as micromagnetic devices will now be described. The process enables production of wafer- level micromagnetic devices having metallic layers (or windings) with a thickness, without limitation, of 100 pm or more, and with spacing between winding segments (or inter-turn separations) that may only be, without limitation, 40 pm or less. The result is a faster and more cost-effective method of manufacturing wafer-level micromagnetic devices on substrates with thick windings, and with high aspect ratio, namely a high ratio of winding segment thickness to spacing between winding segments, compared to traditional photolithographic processes.

Turning now to FIGURE 98, illustrated is a drawing showing an example of a roller 1100 wrapped with a photosensitive film 1110. The photosensitive film 1110 may be a dry 100 pm thick, photosensitive film. The roller 1100 with the photosensitive film 1110 may be employed to construct a metallic layer (winding or coil) as set forth below.

Turning now to FIGURE 99, illustrated is a diagram showing a process configuration employed to laminate the photosensitive film 1110 of FIGURE 98 over a substrate 1140. The upper roller 1100 includes the photosensitive film 1110 and a lower roller 1130 includes the substrate 1140 and also may include overlying layers.

Effectively, the photosensitive film 1110 is laminated over the substrate 1140. In an alternative embodiment, a plurality of photosensitive films 1110 may be laminated over the substrate 1140 to obtain a desired thickness. As an example, two 50 pm photosensitive films 1110 may be laminated over the substrate 1140 to reach a desired thickness of 100 pm. The substrate 1140 on which a metallic layer is to be formed adheres to the photosensitive film 1110 by pressure produced by the rollers 1100, 1130. The rollers 1100, 1130 can be heated as needed or can remain at room temperature. A photolithographic process is then applied to the photosensitive film 1110 that produces the metallic layer (winding or coil) with a high aspect ratio in one efficient processing iteration. There is no need for repeatedly applying, spinning, and drying a photoresist. The photosensitive film 1110 is available in various thicknesses, ranging from 5-300 pm and either a single layer or multiple layers of the photosensitive film can be processed appropriately to accommodate a thickness of the metallic layer very close to the photosensitive film 1110 such as 95 to 98 pm. Thus, the photosensitive film is employed to form metallic layer(s) in reduced processing steps as opposed to repeatedly applying and etching a photoresist to form thick apertures into which the metallic layer(s) will be formed.

Turning now to FIGURE 100, illustrated is a diagram of an embodiment of a method 1200 of forming a micromagnetic device. At a first step 1210, a photosensitive film 1220 on a first roller 1240 is laminated over a substrate 1230 (which also may include overlying layers) on a second roller 1245. There are numerous suppliers of such photosensitive dry laminate films such as Dupont, Asahi Kasei, Kolon Industries, Hitachi Chemicals and many others that provide films suitable for the micromagnetic device. The supplier, tone (positive or negative) and thickness of the photosensitive dry laminate films may be chosen based on the design constraints of the device being manufactured. The substrate 1230 on which a metallic layer is to be formed adheres to the photosensitive film 1220 by controlled pressure, for example in a range between 10-90 pounds-per- square inch (“psi”), which is produced by the rollers 1240, 1245 and maintained within an appropriate range of temperatures, for example between 70-140 degrees Celsius (“°C”). The substrate 1230 may also be pre-heated to allow for better adhesion of the photosensitive film 1220 and improved stability through the remaining process sequence. The exit temperature of the substrate 1230 and laminated photosensitive film 1220 is monitored and used to provide feedback to the laminating equipment to enhance or optimize the lamination process. The speed of the lamination process is chosen to reduce or exclude defects such as entrapped air bubbles, improve adhesion and equipment capabilities. This is typically in a range of 0.1-5 meters-per-minute (“m/min”). (See, e.g., FIGURES 98 and 99 for an example lamination process).

At a second step 1250, the excess photosensitive film is cut to match the wafer shape to provide a laminated substrate 1255. At a third step 1260, a photolithography process using a mask 1265 and ultraviolet (“UV”) radiation is performed on the laminated substrate 1255. This step could be performed for example using a standard I-line UV aligner with an appropriate ultraviolet dosage typically between 20-200 milli-Joules-per- centimeters squared (“mJ/cm ² ”).

At a fourth step 1270, a pattern from the mask 1265 is transferred to the laminated substrate 1255 by a post exposure bake and photoresist development process. The development process is also chosen appropriate to the type of film chosen. Such developers are typically aqueous, and as an example alkaline (hydroxide) based developers may be used for positive tone films and carbonate based developers maybe chosen for negative tone films. Suppliers and manufacturers of such photosensitive films typically provide guidance on appropriate selection of the type of developer and processing parameters. The result is a patterned laminated substrate 1275.

At a fifth step 1280, features of the micromagnetic device are electroplated and the laminated photosensitive film is removed by, for instance, a wet photoresist stripping process and to form a micromagnetic device 1285. Similar to the choice of developers, typically solutions used for stripping are also suggested by the manufacturer of the photosensitive film, depending on the type of processing employed and contain several components proprietary to the manufacturer such as surfactants and anti-oxidants. For the process of stripping, commercially available aqueous alkaline stripping solutions as described earlier maybe employed at elevated temperatures between 30-80 °C. This is typically accompanied by vigorous agitation onto the substrate. Since a significant portion of the photosensitive film and its components may not dissolve in the solution, an inline filtration of the solution to remove particulates and pieces of the photosensitive film that have been removed from the substrate as part of the stripping process may be necessary. It should be noted that FIGURE 100 is a conceptual representation of, for instance, the laminated substrate 1255, patterned laminated substrate 1275 and micromagnetic device 1285. The features of the respective devices are delineated with respect to other FIGURES herein.

Turning now to FIGURES 101 to 105, illustrated are cross-sectional views of an embodiment of forming winding segments. Beginning with FIGURE 101, a micromagnetic device 1300 includes a photosensitive film 1330 (e.g., 100 pm thick) laminated over a seed layer 1320, which has been formed over a substrate 1310. The separation of the substrate 1310 and seed layer 1320 represent that there may be intervening layers such as a magnetic layer 1315 therebetween. See the micromagnetic devices disclosed herein for the process to form the magnetic layer 1315 and the seed layer 1320 and representative materials for the substrate 1310, the magnetic layer 1315 and the seed layer 1320. For instance, the magnetic layer 1315 may include a magnetic alloy with iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent. A content of the boron is in a range of 0.5 to 10 atomic percent. A content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

Turning now to FIGURE 102, the photosensitive film 1330 is exposed through a reticle to define a pattern (generally designated 1340) on the photosensitive film 1330. The photosensitive film 1330 is then developed to form an aperture(s) (two of which are designated 1350, 1355) based on the pattern 1340 on the photosensitive film 1330.

Turning now to FIGURE 103, a metallic layer 1360 is deposited within the aperture(s) 1350, 1355. The metallic layer 1360 may be deposited by a wet-bath electroplating process. The metallic layer 1360 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer 1360 is, without limitation, about 90 pm. Of course, the thickness of the metallic layer 1360 is a function of a thickness of the photosensitive film 1330. In this example, the metallic layer 1360 is 90 pm thick with a photosensitive film 1330 of 100 pm thick. In another example, the metallic layer 1360 may be 10 pm thick with a photosensitive film 1330 of about 12 pm thick. The thickness of the layers is dependent on the application and may vary. Turning now to FIGURE 104, the remaining photosensitive film 1330 is removed using a suitable photosensitive film chemical immersion stripping process to create first, second, third and fourth winding segments 1370, 1372, 1375, 1377. In this case, an aspect ratio representing a thickness (“TH”) of a winding segment (e.g., 90 pm) to a line spacing dimension or spacing (“SP”, e.g., 40 pm) between a winding segment (e.g., the first winding segment 1370) and another winding segment (e.g., the second winding segment 1372) is greater than two-to-one. In general, the aspect ratio may be at least one- to-one.

Turning now to FIGURE 105, an insulating layer 1380 is formed over the metallic layer forming the winding with the first, second, third and fourth winding segments 1370, 1372, 1375, 1377. Also, there may be overlaying layers such as another magnetic layer 1390 over the insulating layer 1380. See the micromagnetic devices disclosed herein for the process to form the insulating layer 1380 and the another magnetic layer 1390 and the representative materials therefor.

Thus, a device (such as a micromagnetic device 1300), and related method of forming the same, has been introduced herein (see, e.g., FIGURES 101 to 105). In an embodiment, the device (1300) includes a seed layer (1320) over a substrate (1310), and a metallic layer (1360) electroplated within an aperture (1350) in a photosensitive film (1330) laminated over the seed layer (1320) to produce a winding segment (1370, e.g., having a thickness of at least 10 microns). The aperture (1350) is formed by exposing the photosensitive film (1330) through a reticle to define a pattern (1340) and developing the photosensitive film (1330) to form the aperture (1350) based on the pattern (1340).

The metallic layer (1360) may include another winding segment (1372) electroplated within another aperture (1355) in the photosensitive film (1330). The another aperture (1355) is formed by exposing the photosensitive film (1330) through the reticle to define the pattern (1340) and developing the photosensitive film (1330) to form the another aperture (1355) based on the pattern (1340). An aspect ratio representing a thickness (TH) of the winding segment (1370) to a spacing (SP) between the winding segment (1370) and the another winding segment (1372) is at least one-to-one. It should be noted that the thickness (TH) of the winding segment (1370) and the another winding segment (1372) may be different, and spacing (SP) between multiple winding segments can be different. The winding segment (1370) and the another winding segment (1372) may form at least a portion of a spirally shaped winding. Of course, the device (1300) may include a single winding segment or multiple winding segments.

The device (1300) may also include an insulating layer (1380) formed over the winding segment (1370) and the another winding segment (1372). The device (1300) may further include a magnetic layer (1315) formed between the substrate (1310) and the seed layer (1320), and another magnetic layer (1390) formed over the insulating layer (1380). Of course, the device (1300) may include a single magnetic layer or multiple magnetic layers. The magnetic layer (1315) and/or the another magnetic layer (1390) may include a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

In another embodiment, the method of forming the device (such as a micromagnetic device 1300) includes forming a seed layer (1320) over a substrate (1310), laminating a photosensitive film (1330) over the seed layer (1320), and exposing the photosensitive film (1330) through a reticle to define a pattern (1340) on the photosensitive film (1330). The method also includes developing the photosensitive film (1330) to form an aperture (1350) based on the pattern (1340) in the photosensitive film (1330), and electroplating a metallic layer (1360) within the aperture (1350) to produce a winding segment (1370, e.g., having a thickness of at least 10 microns).

The method may also include developing the photosensitive film (1330) to form another aperture (1355) based on the pattern (1340) in the photosensitive film (1330), and electroplating the metallic layer (1360) within the another aperture (1355) to produce another winding segment (1372). An aspect ratio representing a thickness (TH) of the winding segment (1370) to a spacing (SP) between the winding segment (1370) and the another winding segment (1372) is at least one-to-one. It should be noted that the thickness (TH) of the winding segment (1370) and the another winding segment (1372) may be different, and spacing (SP) between multiple winding segments can be different. The winding segment (1370) and the another winding segment (1372) may form at least a portion of a spirally shaped winding. Of course, the device (1300) may include a single winding segment or multiple winding segments.

The method may also include forming an insulating layer (1380) over the winding segment (1370) and the another winding segment (1372). The method may further include forming a magnetic layer (1315) over the substrate (1310) prior to forming the seed layer (1320), and forming another magnetic layer (1390) over the insulating layer (1380). Of course, the device (1300) may include a single magnetic layer or multiple magnetic layers. The magnetic layer (1315) and/or the another magnetic layer (1390) may include a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

TABLE 1 below shows in a sequence of columns examples of typical coating time, exposure time, developing time, bake time, strip time, and total processing time to produce a metallic layer (e.g., copper winding) employing a conventional (“spinner”) process and the photolithographic process (“laminator”) introduced herein. Data are compared in TABLE 1 as illustrated in the leftmost column for copper winding thicknesses of 10, 30, 60, and 100 pm. Coating time grows with film thickness for a conventional process, but remains at 0.5 minutes for the laminating process illustrated in FIGURE 100. Similarly, exposure time, developing time, baking time, and stripping time after plating grows substantially for the conventional process, but grows much less for the photolithographic process. The result is the total processing time for the photolithographic process is substantially less than that for a conventional process.

TABLE I

Turning now to FIGURES 106 to 111, illustrated are cross-sectional views of another embodiment of forming winding segments. Beginning with FIGURE 106, a micromagnetic device 1400 includes a first photosensitive film 1430 (e.g., 50 pm thick) laminated over a seed layer 1420, which has been formed over a substrate 1410. The separation of the substrate 1410 and seed layer 1420 represent that there may be intervening layers such as a magnetic layer 1415 therebetween. See the micromagnetic devices disclosed herein for the process to form the magnetic layer 1415 and the seed layer 1420 and representative materials for the substrate 1410, the magnetic layer 1415 and the seed layer 1420. For instance, the magnetic layer 1415 may include a magnetic alloy with iron, cobalt, boron and phosphorous. A content of the cobalt is in a range of 1.0 to 8.0 atomic percent. A content of the boron is in a range of 0.5 to 10 atomic percent. A content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy. Turning now to FIGURE 107, a second photosensitive film 1435 (e.g., 50 pm thick) is laminated over the first photosensitive film 1430, which has been formed over a substrate 1410. Of course, the micromagnetic device may incorporate multiple layers of photosensitive film of like or different thickness.

Turning now to FIGURE 108, the first and second photosensitive films 1430,

1435 are exposed through a reticle to define a pattern (generally designated 1440) on the photosensitive films 1430, 1435. The photosensitive films 1430, 1434 are then developed to form an aperture(s) (two of which are designated 1450, 1455) based on the pattern 1440 on the photosensitive films 1430, 1435.

Turning now to FIGURE 109, a metallic layer 1460 is deposited within the aperture(s) 1450, 1455. The metallic layer 1460 may be deposited by a wet-bath electroplating process. The metallic layer 1460 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer 1460 is, without limitation, about 90 pm. Of course, the thickness of the metallic layer 1460 is a function of a thickness of the photosensitive films 1430, 1435. In this example, the metallic layer 1460 is 90 pm thick with the photosensitive films 1430, 1435 of 100 pm thick. In another example, the metallic layer 1460 may be 10 pm thick with the photosensitive films 1430, 1435 of about 12 pm thick. The thickness of the layers is dependent on the application and may vary.

Turning now to FIGURE 110, the remaining photosensitive films 1430, 1435 are removed using a suitable photosensitive film chemical immersion stripping process to create first, second, third and fourth winding segments 1470, 1472, 1475, 1477. In this case, an aspect ratio representing a thickness (“TH”) of a winding segment (e.g., 90 pm) to a spacing (“SP”, e.g., 40 pm) between a winding segment (e.g., the first winding segment 1470) and another winding segment (e.g., the second winding segment 1472) is greater than two-to-one. In general, the aspect ratio may be at least one-to-one.

Turning now to FIGURE 111, an insulating layer 1480 is formed over the metallic layer forming the winding with the first, second, third and fourth winding segments 1470, 1472, 1475, 1477. Also, there may be overlaying layers such as another magnetic layer 1490 over the insulating layer 1480. See the micromagnetic devices disclosed herein for the process to form the insulating layer 1480 and the another magnetic layer 1490 and the representative materials therefor. Thus, a device (such as a micromagnetic device 1400), and related method of forming the same, has been introduced herein (see, e.g., FIGURES 106 to 111). In an embodiment, the device (1400) includes a seed layer (1420) over a substrate (1410), and a metallic layer (1460) electroplated within an aperture (1450) in a first photosensitive film (1430) and a second photosensitive film (1435) laminated over the seed layer (1420) to produce a winding segment (1470, e.g., having a thickness of at least 10 microns). The aperture (1450) is formed by exposing the first photosensitive film (1430) and the second photosensitive film (1435) through a reticle to define a pattern (1440) and developing the first photosensitive film (1430) and the second photosensitive film (1435) to form the aperture (1450) based on the pattern (1440). The second photosensitive film (1435) may be exposed concurrently with the first photosensitive film (1430), and the second photosensitive film (1435) may be developed concurrently with the first photosensitive film (1430).

The metallic layer (1460) may include another winding segment (1472) electroplated within another aperture (1455) in the first photosensitive film (1430) and the second photosensitive film (1435). The another aperture (1455) is formed by exposing the first photosensitive film (1430) and the second photosensitive film (1435) through the reticle to define the pattern (1440) and developing the first photosensitive film (1430) and the second photosensitive film (1435) to form the another aperture (1455) based on the pattern (1440). An aspect ratio representing a thickness (TH) of the winding segment (1470) to a spacing (SP) between the winding segment (1470) and the another winding segment (1472) is at least one-to-one. It should be noted that the thickness (TH) of the winding segment (1470) and the another winding segment (1472) may be different, and spacing (SP) between multiple winding segments can be different. The winding segment (1470) and the another winding segment (1472) may form at least a portion of a spirally shaped winding. Of course, the device (1400) may include a single winding segment or multiple winding segments.

The device (1400) may also include an insulating layer (1480) formed over the winding segment (1470) and the another winding segment (1472). The device (1400) may further include a magnetic layer (1415) formed between the substrate (1410) and the seed layer (1420), and another magnetic layer (1490) formed over the insulating layer (1480). Of course, the device (1400) may include a single magnetic layer or multiple magnetic layers. The magnetic layer (1415) and/or the another magnetic layer (1490) may include a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

In another embodiment, the method of forming the device (such as a micromagnetic device 1400) includes forming a seed layer (1420) over a substrate (1410), laminating a first photosensitive film (1430) and a second photosensitive film (1435) over the seed layer (1420), and exposing (e.g., concurrently or at different steps or time) the first photosensitive film (1430) and the second photosensitive film (1435) through a reticle to define a pattern (1440) on the first photosensitive film (1430) and the second photosensitive film (1435). The method also includes developing (e.g., concurrently or at different steps or time) the first photosensitive film (1430) and the second photosensitive film (1435) to form an aperture (1450) based on the pattern (1440) in the first photosensitive film (1430) and the second photosensitive film (1435), and electroplating a metallic layer (1460) within the aperture (1450) to produce a winding segment (1470, e.g., having a thickness of at least 10 microns).

The method may also include developing the first photosensitive film (1430) and the second photosensitive film (1435) to form another aperture (1455) based on the pattern (1440) in the first photosensitive film (1430) and the second photosensitive film (1435), and electroplating the metallic layer (1460) within the another aperture (1455) to produce another winding segment (1472). An aspect ratio representing a thickness (TH) of the winding segment (1470) to a spacing (SP) between the winding segment (1470) and the another winding segment (1472) is at least one-to-one. It should be noted that the thickness (TH) of the winding segment (1470) and the another winding segment (1472) may be different, and spacing (SP) between multiple winding segments can be different. The winding segment (1470) and the another winding segment (1472) may form at least a portion of a spirally shaped winding. Of course, the device (1400) may include a single winding segment or multiple winding segments. The method may also include forming an insulating layer (1480) over the winding segment (1470) and the another winding segment (1472). The method may further include forming a magnetic layer (1415) over the substrate (1410) prior to forming the seed layer (1420), and forming another magnetic layer (1490) over the insulating layer (1480). Of course, the device (1400) may include a single magnetic layer or multiple magnetic layers. The magnetic layer (1415) and/or the another magnetic layer (1490) may include a magnetic alloy including iron, cobalt, boron and phosphorous, wherein a content of the cobalt is in a range of 1.0 to 8.0 atomic percent, a content of the boron is in a range of 0.5 to 10 atomic percent, a content of the phosphorus is in a range of 3.5 to 25 atomic percent, and a content of the iron is substantially a remaining proportion of the magnetic alloy.

Microfabrication of micromagnetic devices such as small inductors, transformers and electromagnets often employ electrodeposition (electroplating) of metallic or magnetic layers over a substrate such as a silicon substrate. The shape, thickness and location of the metallic or magnetic layers are usually defined by patterning a photoresist layer that acts as a mask to define a periphery for the area that is the target of the electrodeposition process. An adhesive/seed layer combination can be used under the photoresist layer to provide an electrical contact and to secure the plated layer over the substrate.

As introduced herein, an electroplating process is employed to produce a metallic, magnetic, or semi-insulating layer (also referred to as an “electroplated layer” or “plated layer”) over a substrate. The electroplating process does not use a patterned photoresist layer or other mold type to constrain the peripheral shape of the plated layer. Rather, the peripheral shape of the plated layer is defined by an underlying seed layer formed and shaped below the area onto which the plated layer will be electroplated. The underlying seed layer itself may be formed employing a patterned photoresist layer.

The processes described herein will be referred to as a “photoresist-free plating” or “free plating” process because the underlying seed layer, not the patterned photoresist layer, defines the lateral shape of the plated layer. In the free plating process, the plated layer is not confined within walls of a photoresist mold. Examples of micromagnetic devices that can be produced by the free plating process described herein include, without limitation, toroidal and spiral structures. Examples of plating layers include, without limitation, metallic layers with copper and gold, magnetic layers with iron-cobalt-boron, and semi-insulating layers with polypyrrole. The free plating process can be employed to electroplate one or more layers over a substrate and can be employed to form a micromagnetic device with a single- or multi layer stack of metallic and/or magnetic layers. The free plating process can also be employed to form a bottom metallic layer, a magnetic core stack, and a top metallic layer over a substrate.

Conventional processes that employ internal walls of a patterned photoresist layer to define the lateral shape of the plated layer will be referred to herein as a “photoresist plating” process. Examples of photoresist layers that can be used include, without limitation, AZ 1000 series, AZ XT series, AZ 4000 series and AZ 9000 series from MicroChemicals GmbH and SU-8 series photoresists from Kayaku Advanced Materials.

Walls of patterned photoresist layers normal to the surface of a substrate are conventionally employed to define the shape and size of structures to be electrodeposited over the substrate. The thickness of a patterned photoresist layer usually determines the maximum thickness of the electroplated layer. After electrodeposition is completed, the patterned photoresist layer is often removed and the exposed seed layer is usually etched away.

The walls of patterned photoresist layers are especially important with electroplated layers that electroplate substantially faster laterally (e.g., 10 times faster) than in a direction normal to the surface of the substrate. For instance, a one micron thick polypyrrole layer may grow up to 20 microns (e.g., 0.02 - 100 microns) laterally. Such unequal rates of growth of the electroplated layer can result in a non-uniform thickness thereof over the substrate.

Turning now to FIGURE 112, illustrated is a cross sectional view of another embodiment of a micromagnetic device 1500. The micromagnetic device 1500 is formed on a substrate 1510 with an adhesive layer 1520 formed thereover. A seed layer 1530 is formed over the adhesive layer 1520 and an electroplated layer is formed over the seed layer 1530 providing a first electroplated layer segment (designated “ELI”) 1540 and a second electroplated layer segment (designated “EL2”) 1545. The first and second electroplated layer segments 1540, 1545 are separated by a patterned photoresist layer (previously removed as shown in a dashed outlined region designated “PR”) 1550 to create the structure as displayed. While the patterned photoresist layer 1550 can constrain the lateral growth, the first and second electroplated layer segments 1540, 1545 can form edge effect horns (one of which is designated 1560) adjacent the walls of the patterned photoresist layer 1550. The edge effect horns 1560 result in a non-uniform thickness of the first and second electroplated layer segments 1540, 1545.

For a photoresist plating process, a line spacing dimension (“SP”) is maintained to prevent electrical contact (reliable electrical separation) between the first and second electroplated layer segments 1540, 1545. The line spacing dimension is determined by a photolithography ratio of the thickness (“TH”) of patterned photoresist layer to a width (“WPR”) of the patterned photoresist layer (which provides the line spacing dimension). The higher the photolithography ratio, the smaller the line spacing dimension. For thick electroplated areas, thick photoresist molds should be used, which make it difficult to achieve high aspect ratio photolithography.

As mentioned above, it is common to observe edge effect horns due to the unequal plating rate in different directions of the electroplated layer. The edges of the electroplated layer electroplate faster than their exposed surfaces, creating the edge effect. The edge effect horns become higher than the rest of the structure due to changes in the electric field density from the edge to the center of the electroplated layer. The edge effect depends on the thickness of the patterned photoresist layer, the device density (critical dimensions across the wafer), and the current density of the electroplating. Sometimes complexing agents, additives and levelers can be used to reduce this effect, but the drawbacks are slower plating, more complicated bath chemistries and bath maintenance procedures. In the case of electrodeposition of magnetic alloys, these additional chemicals may also affect the composition of the alloy and affect the resultant magnetic properties. The edge effect is described as being within the footprint of an individual device or die and may be considered as having an impact on micro-uniformity across a feature or a specific set of patterns within a die. The device edge effect is particularly problematic on thicker structures. It also affects wafer planarity and can cause problems for multi-layer microfabrication processes. Also, introducing certain chemical levelers into the plating bath can reduce the device edge effect, but adds complexity, cost, and processing time. Significant edge effects can be a limiting factor on multilayered micromagnetic devices when the surface planarity is to be considered. Also, the chemicals used to strip the patterned photoresist layer following the electroplating process can affect, damage and/or etch the electroplated structures.

Thus, a number of issues are thus encountered in a photoresist plating process when the plated material is deposited in a trough. Thick electroplated structures will generally require even a thicker photoresist with photolithography. Limitation of the achievable photoresist thickness, aspect ratio, and critical dimensions limit device design flexibility and add process complexity and costs.

Turning now to FIGURE 113, illustrated is a cross sectional view of another embodiment of a micromagnetic device 1600. The micromagnetic device 1600 is formed on a substrate 1610 with an adhesive layer 1620 formed thereover. A seed layer 1630 is formed over the adhesive layer 1620, a patterned insulating layer 1640 is formed over the seed layer 1630, and a patterned protective layer 1650 is formed over the patterned insulating layer 1640. An electroplated layer is formed over the exposed portions of the seed layer 1630 providing a first electroplated layer segment (designated “ELI”) 1670 and a second electroplated layer segment (designated “EL2”) 1680. The first and second electroplated layer segments 1670, 1680 are separated using a first free plating process as described herein. The first free plating process uses the patterned insulating layer 1640 and the patterned protective layer 1650 to create a line spacing dimension (“SP”) to prevent electrical contact (reliable electrical separation) between the first and second electroplated layer segments 1670, 1680. The line spacing dimension is created by determining the width (“WPL”) of the patterned insulating layer 1640 and the patterned protective layer 1650 between the to be formed first and second electroplated layer segments 1670, 1680. While the plated structure extends beyond the boundaries of the exposed seed layer 1630 (over the patterned protective layer 1650) due to isotropic electroplating (an extension “EXT” (a laterally over-plated region) having an extension width WEXT), the width of the patterned insulating layer 1640 and the patterned protective layer 1650 is selected to maintain the line spacing dimension. It should also be noted that the extension width WEXT in this case is about the same dimension as the thickness TH of the electroplated layer minus a thickness (“TPI”) of the patterned insulating layer 1640 and patterned protective layer 1650. The free plating masking pattern dimension can be estimated using the equation:

W _PL =(2X(TH-TPI)+SP)*WLF where the TH represents the desired thickness the electroplated layer as defined by application requirements and design of the device, TPI represents the desired thickness the patterned insulating layer and patterned protective layer, and WLF represents a wafer location-dependent function. It should be understood that TPI dimension may be different if only a protective layer is employed or more than the insulating layer and protective layer are employed. In summary, the dimension is a function of the thickness of the number of layers used to create the electroplated segment(s).

The wafer location-dependent function is a term employed to provide a location- dependent correction term for the masking dimension to reflect process variations across the surface The line spacing dimension SP is the desired design requirement of the device being fabricated. As an example this dimension can be between 1-100 pm, as determined by the requirements of the device. The wafer level function is determined by an understanding of the different plating rates as a function of position on the wafer. In an ideal scenario where the lateral and vertical growth rates are the same and the uniformity of plating rates across all patterns over the entire wafer surface is the same, the wafer level function would be equal to one (1).

It is understood that in a wafer plating process there are inherent non-uniformities associated with the distribution of current and flow on the wafer. This is as a function of plating cell design parameters - such as the relative size of the anode and relative placement or separation of the anode and the cathode. The flow rates of the solution, the chemicals and additives used in the plating bath and the process conditions such as the applied current density and time can also determine the distribution of plating current and resultant thickness at various locations on the wafer. The pattern to be plated includes design parameters such as separation of line widths, and spaces - within the device (die) itself and the distribution or arraying of several of these die across the wafer surface. These micro (within die) and macro (across the wafer) distribution of patterns are attributes that play important roles in the differences of plating rates and thicknesses within each die and across the wafer surface. Due to the described attributes and inter-relationships above, each device pattern to be electroplated will result in a unique wafer level function. It is also recognized that patterns and distribution of these across the wafer that are similar will have similar wafer level functions, while those that are significantly different will employ different wafer level functions.

To empirically determine the wafer level function - a wafer with the desired line spacing function - as determined by the device requirements, is generated such that the pattern (die) is distributed uniformly across the wafer as determined by the lithography, mask and limitations of the equipment being used. A thin photoresist mold of approximately 0.1-5 pm in height (z- dimension) is created on the wafer using standard lithography techniques. The x, y dimensions of the photoresist mold are determined by the mask and design. The wafer is then electroplated for a specified time, for example between 1-120 minutes, to plate the required thickness of the electroplated features. It is recognized that as the electroplating reaches the height of the photoresist film and continues beyond that - the plating will “mushroom” over the top of the photoresist - meaning that it will grow both vertically and laterally. The plating is allowed to continue in this manner until the desired thickness of the film to be plated is achieved. The photoresist mold is then stripped and the thickness of various locations of the wafer is measured in the z-direction to determine height (zl). In addition, the x and y dimensions are also measured to determine the lateral plating rates. The resultant x and y dimensions (xl, yl) can be determined by measuring the edge to edge dimensions of the electroplated patterns. The difference between the original separation of the photoresist mold (x,y) and the new measured dimension (xl, yl) indicates the lateral growth rate of the plated layer. This is then represented as a fraction of the initial dimension (x-xl)/x. The WLF at each location is then equal to l+(x-xl)/x.

The xl, yl and zl measurements are mapped across the entire wafer surface from a reference location, such as the center of the wafer flat, the wafer notch or the center of the wafer as a function of the radius (r) and the angle (theta) from the refence location, WLF (r, theta). This then results in the final wafer level function which determines the revision to the original mask layout design that is necessary, WPL. Instead of a photoresist mold, plating time and current level can be employed to control plating thickness and to control the line spacing dimension. Turning now to FIGURES 114 to 121, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 1600 of FIGURE 113. Beginning with FIGURE 114, the micromagnetic device 1600 is constructed on a rigid or flexible substrate 1610 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. An adhesive layer 1620 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 1610 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 115, a seed layer 1630 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the adhesive layer 1620 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The seed layer 1630 forms a conductive layer onto which an electroplated layer will be deposited in a following processing step. The thickness of the seed layer 1630 is in the range 1000-4000 A preferably about 1500 A. The seed layer 1630 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 116, an insulating layer 1640 is deposited on the seed layer 1630. The insulating layer 1640 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the insulating layer 1640 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the insulating layer 1640 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the insulating layer 1640 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The insulating layer 1640 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the seed layer 1630, which is then hard cured by heating or other means. The insulating layer 1640 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the insulating layer 1640 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer 1640 in the micromagnetic device 1600, thereby simplifying the total manufacturing process.

Turning now to FIGURE 117, a protective layer 1650 such as titanium, titanium tungsten (“TiW”), chromium or nickel (or nickel-based) is deposited at about 100 - 1000 A of thickness over the insulating layer 1640 employing a dry deposition, electroless or electroplating process. In accordance with the electroplating process, the micromagnetic device 1600 is rinsed with carbon dioxide (“C0 ₂ ”)-saturated, de- ionized water and then immersed in an aqueous electrolyte (e.g., a titanium tungsten aqueous electrolyte) to form the protective layer 1650 over the insulating layer 1640. The protective layer 1650 may also include an insulating layer, thereby omitting the separate insulating layer 1640.

Turning now to FIGURE 118, a patterned photoresist (“PR”) layer 1660 is deposited over the protective layer 1650. These are typically thin film photoresists, such as novolak, epoxy or thiol based formulations of standard thin film photoresists.

Examples of these are as supplied by Rohm and Haas’s SPR series of photoresists or Microchemicals series of AZ photoresists, or any other that is commonly used in fabrication of semiconductor devices. Typical processes for dispensing these on wafers involve spinning at a specified rpm (e.g., 100-3000 revolutions-per-minute (“rpm”)), exposing under a mask for a specified dose of ultraviolet (“UV”) radiation (e.g., 1-500 milliwatt over centimeter squared (“mW/cm ² ”)) to produce a pattern where the spun-on photoresist is exposed to the radiation, and developing (removing the resist by soaking the un-exposed resist in an alkaline chemistry). These methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 119, portions of the insulating layer 1640 and the protective layer 1650 not covered by the patterned photoresist layer 1660 are removed. The protective layer 1650 may be removed by utilizing commercially available etchants. As an example, titanium and titanium tungsten can be etched by formulations of acids and oxidizing agents such as formulations of hydrogen peroxide and dilute hydrofluoric acid. Chromium maybe etched by ceric ammonium nitrate or other available etchants. Various other acids such as hydrochloric, sulfuric, phosphoric and nitric acids may be combined with the above in varying percentages from 1-10 % by volume to tailor the etching rates. The protective layer 1650 may also be removed by non wet chemical processes such as plasma etching or ion beam bombardment methods in vacuum chambers.

The insulating layer 1640 may also be removed by a wet process or a non wet (or dry) process. With respect to silicon dioxide, the wet process typically utilizes a buffered oxide etch (“BOE”) solution including ammonium fluoride and hydrofluoric acid, with a typical ratio of 6:1, respectively. Other ratios may also be used to vary the etch rate. A typical etch rate utilizing the BOE solution is between 200-1000 angstroms per minute (“A/min”). Hydrofluoric acid (“HF”) in a concentration of 1-10 percent may also be utilized to etch silicon dioxide.

Silicon dioxide may also be selectively etched using dry etching methods utilizing plasma etching with hydrofluorocarbon or fluorocarbon based chemistries. Examples of typical gases used are, without limitation, carbon tetrafluoride (“CF4”), hexafluoroethane (“C2F6”), fluoroform (“CHF3”), octafluorocyclobutane (“C4F8”) with either a reactive ion etching (“RIE”) process or an inductively couple plasma (“ICP”) process. A variety of plasma etching equipment is available from suppliers such as Applied Materials, LAM Research or Oxford Instruments. Each instrument utilizes a combination of pressure (e.g., 1-1000 milliTorr (“mTorr”)) and power (e.g. , 500-5000 watts (“W”)) as examples of ranges that are typically used to obtain selectivity between the oxide etch rate and the material of the masking pattern (photoresist or other materials).

Similar to silicon dioxide, aluminum oxide deposited by a sputter deposition process can also be etched by a BOE process, similar in composition to the ways of etching silicon dioxide, which is selective to a photoresist. Examples of commercially available developers (AZ726 MiF and AZ300 MiF) manufactured by Merck are also utilized to etch aluminum oxide. Various other wet etchants of aluminum oxide are also described in literature that utilize buffering agents based on other acids such as citric acid or bicarbonate and hydroxide salts of sodium. These are also typical constituents of developing solutions with an alkaline pH and may also be utilized in formulations that require selectivity to certain transition metals. Plasma etching of aluminum oxide is also commonly done with halide based gases, as an example with boron trichloride and/or chlorine and argon or other inert gases. Alternatively, fluoride based chemistries may also be utilized in much the same manner as etching of silicon dioxide. However the toxicity of chlorine based chemistries makes this a challenging way for the process described in this work.

Also, the remaining portions of the patterned photoresist layer 1660 are removed, leaving a patterned insulating layer 1640 and a patterned protective layer 1650 as illustrated. The remaining portions of the patterned photoresist layer 1660 are removed by commercially available stripping solutions, such as tetra methyl ammonium hydroxide (“TMAH”) based, carbonate based, acetone or phenolic stripping agents. The wafer is typically immersed in this stripping solution until all the remaining portions of the patterned photoresist layer 1660 are removed and the underlying layers are visually evident per technical data sheets provided by commercial vendors of the stripping chemistries. As stated above, these methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

The patterned protective layer 1650 in a photoresist free plating process can be thickened to ensure forming a continuous insulating layer over the portion of the seed layer 1630 in areas that are not intended to be electroplated. The patterned protective layer 1650 is patterned and etched to define the areas to be electroplated. The patterned protective layer 1650 is self-passivated and forms at least a portion of the insulation layer that locally prevents deposition of an electroplated layer. In this manner, the patterned protective layer 1650 is operative as an electroplating mask. The photoresist does not have to be thick and it does not directly affect the thickness of the targeted electroplating, as it does in the case of a photoresist plating process.

Turning now to FIGURE 120, an electroplated layer is formed over the exposed portions of the seed layer 1630 providing a first electroplated layer segment (designated “ELI”) 1670 and a second electroplated layer segment (designated “EL2”) 1680. The free electroplating process includes submersing the micromagnetic device 1600 in a wet bath of electroplating material. The electroplating material grows on the exposed portions of the seed layer 1630 as illustrated. While there may be a small edge effect, it is an order of magnitude smaller than a photoresist plating process since the step height is now sub-micron (the thickness of the patterned insulating layer 1640 and the patterned protective layer 1650). The critical dimensions are now controlled by the width of the patterned insulating layer 1640 and the patterned protective layer 1650 between two adjacent plated structures (the first and second electroplated layer segments 1670, 1680) and the electroplating thickness.

For example with photoresist plating process, if the photoresist thickness is 50 microns, the edge effect while plating a thickness of 50 microns of the electroplated layer would be at least ten percent of the thickness of the pattern being plated, or greater than five microns. In the free plating process, the edge effect contribution of ten percent of the patterned insulating layer 1640 and the patterned protective layer 1650 (which are typically a fraction of the thickness of the photoresist thickness) would produce an advantage of at least an order of magnitude improvement with respect to the edge effect in comparison to the photoresist plating process.

As mentioned above, the first free plating process uses the patterned insulating layer 1640 and the patterned protective layer 1650 to create a line spacing dimension (“SP”) to prevent electrical contact (reliable electrical separation) between the first and second electroplated layer segments 1670, 1680. The line spacing dimension is created by determining the width (“WPL”) of the patterned insulating layer 1640 and the patterned protective layer 1650. Plating time controls the plating thickness and defines the line spacing dimension instead of thickness control by a thickness of the photoresist mold.

The electroplated layer may be a metallic layer, a magnetic layer and a semi insulating layers. The metallic layer may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

The magnetic layer may include boron in addition to iron, cobalt and phosphorous. The thickness of the magnetic layer is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other end product. Regarding the magnetic layer, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The magnetic layer includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The magnetic layer can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the magnetic layer advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below.

In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Also, the semi-insulating layer such as polypyrrole with a low level of electrical conductivity can be deposited by an electroplating process. Following electroplating, the insulating layer is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer in the micromagnetic device, thereby simplifying the total manufacturing process. Turning now to FIGURE 121, the exposed portions of the adhesive layer 1620, the seed layer 1630, the patterned insulating layer 1640 and the patterned protective layer 1650 beyond the first and second electroplated layer segments 1670, 1680 are removed. The exposed portions of the patterned insulating layer 1640 and the patterned protective layer 1650 beyond the first and second electroplated layer segments 1670, 1680 are removed in an analogous process as described above with respect to FIGURE 120.

Similar processes can be used for the exposed portions of the adhesive layer 1620 and the seed layer 1630 as well. For example, a seed layer 1630 of copper maybe etched by utilizing combinations of sulfuric acid, hydrogen peroxide and water in a 1:1:10 ratio. Ammonium persulfate or glacial acetic acid may also be utilized to remove copper seed layers selectively. For example, an adhesive layer 1620 of Chromium maybe etched by ceric ammonium nitrate or other available etchants. While two electroplated layer segments with accompanying seed and adhesive layer segments, etc. are shown, the micromagnetic device 1600 may incorporate a plurality of like segments therein. Many such formulations to remove the aforementioned layers are found in academic publications, handbooks and recipes common to semiconductor manufacturing processes. For a better understanding of semiconductor processing see “Handbook of Semiconductor Manufacturing Technology,” Taylor & Francis Group, 2000, et seq., which is incorporated herein by reference.

Thus, a micromagnetic device (1600), and related method, have been introduced herein formed over a substrate (1610). In one embodiment, the micromagnetic device (1600) includes a seed layer (1630) formed over the substrate (1610). The micromagnetic device (1600) also includes a patterned insulating layer (1640) and a patterned protective layer (1650) formed over the seed layer (1630). The micromagnetic device (1600) also includes a first electroplated layer segment (1670) formed over a first exposed section of the seed layer (1630) and between and laterally over sections of the patterned insulating layer (1640) and the patterned protective layer (1650). A thickness (TH) of the first electroplated layer segment (1670) over the section of the seed layer (1630) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the section of the patterned insulating layer (1640) and the patterned protective layer (1650) plus a thickness (TPI) of the patterned insulating layer (1640) and the patterned protective layer (1650). The micromagnetic device (1600) may also include an adhesive layer (1620) between the substrate (1610) and the seed layer (1630). The first electroplated layer segment (1670) extends laterally over a section of the adhesive layer (1620).

The micromagnetic device (1600) may also include a second electroplated layer segment (1680) formed over a second exposed section of the seed layer (1630) and between and laterally over sections of the patterned insulating layer (1640) and the patterned protective layer (1650). A thickness (TH) of the second electroplated layer segment (1870) over the section of the seed layer (1630) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the section of the patterned insulating layer (1640) and the patterned protective layer (1650) plus a thickness (TPI) of the patterned insulating layer (1640) and the patterned protective layer (1650). The first electroplated layer segment (1670) is separated from the second electroplated layer segment (1680) by a width (WPL) of a section (a middle section) of the patterned insulating layer (1640) and the patterned protective layer (1650) therebetween to provide a line spacing dimension (SP) between the first electroplated layer segment (1670) and the second electroplated layer segment (1680).

In another embodiment, the method of forming the micromagnetic device (1600) includes forming an adhesive layer (1620) over a substrate (1610), and forming a seed layer (1630) over the adhesive layer (1620). The method also includes forming an insulating layer (1640) over the seed layer (1630), and forming a protective layer (1650) over the insulating layer (1640). The method also includes forming and patterning a photoresist layer (1660) over the protective layer (1650). The method also includes removing the insulating layer (1640) and the protective layer (1650) in an area not protected by the photoresist layer (1660) to the seed layer (1630). The method also includes removing the photoresist layer (1660). The method also includes electroplating an electroplated layer over the seed layer (1630) between sections of the patterned insulating layer (1640) and the patterned protective layer (1650) to produce a first electroplated layer segment (1670) (without being confined by a patterned photoresist layer or photoresist mold). The first electroplated layer segment (1670) is formed over a section of the seed layer (1630) and between and laterally over sections of the patterned insulating layer (1640) and the patterned protective layer (1650). A thickness (TH) of the first electroplated layer segment (1670) over the section of the seed layer (1630) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the section of the patterned insulating layer (1640) and the patterned protective layer (1650) plus a thickness (TPI) of the patterned insulating layer (1640) and the patterned protective layer (1650). The method may also include removing exposed portions of the adhesive layer (1620), the seed layer (1630), the patterned insulating layer (1640) and the patterned protective layer (1650) beyond the first electroplated layer segment (1670). The method may also include forming a plurality of electroplated layer segments (e.g., a second electroplated layer segment (1680)) and maintaining a line spacing dimension (SP) therebetween.

Turning now to FIGURE 122, illustrated is a cross sectional view of another embodiment of a micromagnetic device 1700. The micromagnetic device 1700 is formed on a substrate 1710 with an adhesive layer 1720 formed thereover. A seed layer is patterned over the adhesive layer 1720 to provide a first seed layer segment (designated “SL1”) 1750 and a second seed layer segment (designated “SL2”) 1760. An electroplated layer is formed over the exposed portions of the patterned seed layer providing a first electroplated layer segment (designated “ELI”) 1770 over the first seed layer segment 1750 and a second electroplated layer segment (designated “EL2”) 1780 over the second seed layer segment 1760. The first and second electroplated layer segments 1770, 1780 are separated using a second free plating process as described herein. The second free plating process uses the patterned seed layer to create a line spacing dimension (“SP”) to prevent electrical contact (reliable electrical separation) between the first and second electroplated layer segments 1770, 1780. The line spacing dimension is created by determining the width (“WPL”) between the first seed layer segment 1750 and the second seed layer segment 1760. While the plated structure extends beyond the boundaries of the first seed layer segment 1750 and the second seed layer segment 1760 due to isotropic electroplating (an extension “EXT” (a laterally over-plated region) having an extension width WEXT), the width therebetween is selected to maintain the line spacing dimension. The extension width WEXT in this case is about the same dimension as the thickness TH of the electroplated layer.

As mentioned above, the free plating pattern dimension can be estimated using the equation:

W _PL =(2XTH+SP)*WLF where the TH represents the desired thickness the electroplated layer as defined by application requirements and design of the device and WLF represents a wafer location- dependent function. The wafer location-dependent function is a term employed to provide a location-dependent correction term for the masking dimension to reflect process variations across the surface The line spacing dimension (“SP”) is the desired design requirement of the device being fabricated. As an example, this dimension can be between 1-100 pm, as determined by the requirements of the device. The wafer level function is determined by an understanding of the different plating rates as a function of position on the wafer. In an ideal scenario where the lateral and vertical growth rates are the same and the uniformity of plating rates across all patterns over the entire wafer surface is the same, the wafer level function would be equal to one (1). The attributes described above with respect to the wafer level function and the first free plating process are also applicable to the second free plating process. Turning now to FIGURES 123 to 128, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 1700 of FIGURE 122. Beginning with FIGURE 123, the micromagnetic device 1700 is constructed on a rigid or flexible substrate 1710 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. An adhesive layer 1720 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 1710 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 124, a seed layer 1730 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the adhesive layer 1720 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The seed layer 1730 forms a conductive layer onto which an electroplated layer will be deposited in a following processing step. The thickness of the seed layer 1730 is in the range 1000-4000 A preferably about 1500 A. The seed layer 1730 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 125, a patterned photoresist (“PR”) layer 1740 is deposited over the seed layer 1730. These are typically thin film photoresists, such as novolak, epoxy or thiol based formulations of standard thin film photoresists. Examples of these are as supplied by Rohm and Haas’s SPR series of photoresists or Microchemicals series of AZ photoresists, or any other that is commonly used in fabrication of semiconductor devices. Typical processes for dispensing these on wafers involve spinning at a specified rpm (e.g., 100-3000 revolutions-per-minute (“rpm”)), exposing under a mask for a specified dose of ultraviolet (“UV”) radiation (e.g., 1-500 milliwatt over centimeter squared (“mW/cm ² ”)) to produce a pattern where the spun-on photoresist is exposed to the radiation, and developing (removing the resist by soaking the un-exposed resist in an alkaline chemistry). These methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 126, portions of the seed layer 1730 not covered by the patterned photoresist layer 1740 are removed. The seed layer 1730 may be removed by utilizing commercially available etchants. As an example, titanium and titanium tungsten can be etched by formulations of acids and oxidizing agents such as formulations of hydrogen peroxide and dilute hydrofluoric acid. Chromium maybe etched by ceric ammonium nitrate or other available etchants. Various other acids such as hydrochloric, sulfuric, phosphoric and nitric acids may be combined with the above in varying percentages from 1-10 % by volume to tailor the etching rates. The seed layer 1730 may also be removed by non wet chemical processes such as plasma etching or ion beam bombardment methods in vacuum chambers. For example, a seed layer 1630 of copper maybe etched by utilizing combinations of sulfuric acid, hydrogen peroxide and water in a 1:1:10 ratio. Ammonium persulfate or glacial acetic acid may also be utilized to remove copper seed layers selectively.

Also, the remaining portions of the patterned photoresist layer 1740 are removed, leaving the first seed layer segment (designated “SL1”) 1750 and the second seed layer segment (designated “SL2”) 1760. The remaining portions of the patterned photoresist layer 1740 are removed by commercially available stripping solutions, such as tetra methyl ammonium hydroxide (“TMAH”) based, carbonate based, acetone or phenolic stripping agents. The wafer is typically immersed in this stripping solution until all the remaining portions of the patterned photoresist layer 1740 are removed and the underlying layers are visually evident per technical data sheets provided by commercial vendors of the stripping chemistries. As stated above, these methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 127, an electroplated layer is formed over the first seed layer segment (designated “SL1”) 1750 and the second seed layer segment (designated “SL2”) 1760 providing a first electroplated layer segment (designated “ELI”) 1770 and a second electroplated layer segment (designated “EL2”) 1780. The free electroplating process includes submersing the micromagnetic device 1700 in a wet bath of electroplating material. The electroplating material grows on the first seed layer segment 1750 and the second seed layer segment 1760 as illustrated. The critical dimensions are now controlled by the first seed layer segment 1750 and the second seed layer segment and the width WPL therebetween.

As mentioned above, the second free plating process uses the first seed layer segment 1750 and the second seed layer segment 1760 to create a line spacing dimension (“SP”) to prevent electrical contact (reliable electrical separation) between the first and second electroplated layer segments 1770, 1780. The line spacing dimension is created by determining the width (“WPL”) between the first seed layer segment 1750 and the second seed layer segment 1760. Plating time controls the plating thickness and defines the line spacing dimension instead of thickness control by a thickness of the photoresist mold.

The electroplated layer may be a metallic layer, a magnetic layer and a semi insulating layers. The metallic layer may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the metallic layer is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

The magnetic layer may include boron in addition to iron, cobalt and phosphorous. The thickness of the magnetic layer is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other end product.

Regarding the magnetic layer, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The magnetic layer includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The magnetic layer can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the magnetic layer advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below.

In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Also, the semi-insulating layer such as polypyrrole with a low level of electrical conductivity can be deposited by an electroplating process. Following electroplating, the insulating layer is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer in the micromagnetic device, thereby simplifying the total manufacturing process.

Turning now to FIGURE 128, the exposed portions of the adhesive layer 1720 beyond the first and second electroplated layer segments 1770, 1780 are removed. For example, an adhesive layer 1620 of chromium maybe etched by ceric ammonium nitrate or other available etchants. While two electroplated layer segments with accompanying seed and adhesive layer segments, etc. are shown, the micromagnetic device 1700 may incorporate a plurality of like segments therein. Many such formulations to remove the aforementioned layers are found in academic publications, handbooks and recipes common to semiconductor manufacturing processes.

Thus, a micromagnetic device (1700), and related method, have been introduced herein formed over a substrate (1710). In one embodiment, the micromagnetic device (1700) includes a first seed layer segment (1750) formed over the substrate (1710). The micromagnetic device (1700) also includes a first electroplated layer segment (1770) formed over and laterally beyond the first seed layer segment (1750). A thickness (TH) of the first electroplated layer segment (1770) over the first seed layer segment (1750) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the first seed layer segment (1750). The micromagnetic device (1700) may also include an adhesive layer (1720) between the substrate (1710) and the first seed layer segment (1750). The first electroplated layer segment (1770) extends laterally over the adhesive layer (1720) and laterally beyond the first seed layer segment (1750) to the adhesive layer (1720).

The micromagnetic device (1700) may also include a second seed layer segment (1760) formed over the substrate (1710). The micromagnetic device (1700) may also include a second electroplated layer segment (1780) formed over and laterally beyond the second seed layer segment (1760). A thickness (TH) of the second electroplated layer segment (1780) over the second seed layer segment (1760) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the second seed layer segment (1760). The first seed layer segment (1750) is separated from the second seed layer segment (1760) by a width (WPL) to provide a line spacing dimension (SP) between the first electroplated layer segment (1770) and the second electroplated layer segment (1780).

In another embodiment, the method of forming the micromagnetic device (1700) includes forming an adhesive layer (1720) over a substrate (1710), and forming a seed layer (1730) over the adhesive layer (1720). The method also includes forming and patterning a photoresist layer (1740) over the seed layer (1730). The method also includes removing the seed layer (1730) in an area not protected by the photoresist layer (1740) to produce a first seed layer segment (1750). The method also includes removing the photoresist layer (1740). The method also includes electroplating an electroplated layer over the first seed layer segment (1750) to produce a first electroplated layer segment (1770) (without being confined by a patterned photoresist layer). The first electroplated layer segment (1770) is formed over and laterally beyond the first seed layer segment (1750). A thickness (TH) of the first electroplated layer segment (1770) over the first seed layer segment (1750) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the first seed layer segment (1750). The method may also include removing exposed portions of the adhesive layer (1720) beyond the first electroplated layer segment (1770). The method may also include forming a plurality of electroplated layer segments (e.g., a second electroplated layer segment (1780)) and maintaining a line spacing dimension (SP) therebetween.

Turning now to FIGURE 129, illustrated is a cross sectional view of another embodiment of a micromagnetic device 1800. The micromagnetic device 1800 is formed on a substrate 1805 with an adhesive layer 1810 formed thereover. A seed layer is patterned over the adhesive layer 1810 to provide a first seed layer segment (designated “SL1”) 1825 and a second seed layer segment (designated “SL2”) 1860. A first magnetic layer is electroplated over the exposed portions of the patterned seed layer providing a first magnetic layer segment (designated “ML1”) 1830 over the first seed layer segment 1825 and a first magnetic layer segment (also designated “ML1”) 1865 over the second seed layer segment 1860. A first semi-insulating layer is electroplated over the first magnetic layer segment 1830 in an area defined by the first seed layer segment 1825 to form a first semi-insulating layer segment (designated “SIL1”) 1835. The first semi- insulating layer is also electroplated over the first magnetic layer segment 1865 in an area defined by the second seed layer segment 1860 to form a first semi-insulating layer segment (also designated “SIL1”) 1870.

A second magnetic layer is electroplated over the first semi-insulating layer segment 1835 in an area defined by the first seed layer segment 1825 to form a second magnetic layer segment (designated “ML2”) 1840. The second magnetic layer is also electroplated over the first semi-insulating layer segment 1870 in an area defined by the second seed layer segment 1860 to form a second magnetic layer segment (also designated “ML2”) 1875.

A second semi-insulating layer is electroplated over the second magnetic layer segment 1840 in an area defined by the first seed layer segment 1825 to form a second semi-insulating layer segment (designated “SIL2”) 1845. The second semi-insulating layer is also electroplated over the second magnetic layer segment 1875 in an area defined by the second seed layer segment 1860 to form a second semi-insulating layer segment (also designated “SIL2”) 1880.

A third magnetic layer is electroplated over the second semi-insulating layer segment 1845 in an area defined by the first seed layer segment 1825 to form a third magnetic layer segment (designated “ML3”) 1850. The third magnetic layer is also electroplated over the second semi-insulating layer segment 1880 in an area defined by the second seed layer segment 1860 to form a third magnetic layer segment (also designated “ML3”) 1885.

The first, second and third magnetic layer segments 1830, 1840, 1850 and intervening first and second semi-insulating layer segments 1835, 1845 over the first seed layer segment 1825 are separated from the first, second and third magnetic layer segments 1865, 1875, 1885 and intervening first and second semi-insulating layer segments 1870, 1880 over the second seed layer segment 1860 using the second free plating process as described above. The first free plating process may also be employed to electroplate ones of or all of the segments. The second free plating process uses the patterned seed layer to create a line spacing dimension (“SP”) to prevent electrical contact (reliable electrical separation) between the lateral outermost segments (in this case, the third magnetic layer segments 1850, 1885) over the respective first and second seed layer segments 1825,

1860. The line spacing dimension is created by determining the width (“WPL”) between the first seed layer segment 1825 and the second seed layer segment 1860. While the plated structure extends beyond the boundaries of the first seed layer segment 1825 and the second seed layer segment 1860 due to isotropic electroplating (an extension “EXT”

(a laterally over-plated region) having an extension width WEXT), the width therebetween is selected to maintain the line spacing dimension. The extension width WEXT in this case includes each extension width of corresponding extensions (e.g., the sum of WEXTI . . . WEXT _II ) of the electroplated layers over the respective first and second seed layer segments 1825, 1860. The extension width WEXT in this case is about the same dimension as the thickness TH of the electroplated layers over the respective first and second seed layer segments 1825, 1860.

As mentioned above, the free plating pattern dimension can be estimated using the equation:

W _PL =(2XTH+SP)*WLF where the TH represents the desired thickness the electroplated layers as defined by application requirements and design of the device and WLF represents a wafer location- dependent function. The wafer location-dependent function is a term employed to provide a location-dependent correction term for the masking dimension to reflect process variations across the surface The line spacing dimension (“SP”) is the desired design requirement of the device being fabricated. As an example, this dimension can be between 1-100 pm, as determined by the requirements of the device. The wafer level function is determined by an understanding of the different plating rates as a function of position on the wafer. In an ideal scenario where the lateral and vertical growth rates are the same and the uniformity of plating rates across all patterns over the entire wafer surface is the same, the wafer level function would be equal to one (1). Again, the attributes described above with respect to the wafer level function are applicable to the first and second free plating processes.

Turning now to FIGURES 130 to 138, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 1800 of FIGURE 129. Beginning with FIGURE 130, the micromagnetic device 1800 is constructed on a rigid or flexible substrate 1805 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. An adhesive layer 1810 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 1805 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 131, a seed layer 1815 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the adhesive layer 1810 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The seed layer 1815 forms a conductive layer onto which an electroplated layer will be deposited in a following processing step. The thickness of the seed layer 1815 is in the range 1000-4000 A preferably about 1500 A. The seed layer 1815 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 132, a patterned photoresist (“PR”) layer 1820 is deposited over the seed layer 1815. These are typically thin film photoresists, such as novolak, epoxy or thiol based formulations of standard thin film photoresists. Examples of these are as supplied by Rohm and Haas’s SPR series of photoresists or Microchemicals series of AZ photoresists, or any other that is commonly used in fabrication of semiconductor devices. Typical processes for dispensing these on wafers involve spinning at a specified rpm (e.g., 100-3000 revolutions-per-minute (“rpm”)), exposing under a mask for a specified dose of ultraviolet (“UV”) radiation (e.g., 1-500 milliwatt over centimeter squared (“mW/cm ² ”)) to produce a pattern where the spun-on photoresist is exposed to the radiation, and developing (removing the resist by soaking the un-exposed resist in an alkaline chemistry). These methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products. Turning now to FIGURE 133, portions of the seed layer 1815 not covered by the patterned photoresist layer 1820 are removed. The seed layer 1815 may be removed by utilizing commercially available etchants. As an example, titanium and titanium tungsten can be etched by formulations of acids and oxidizing agents such as formulations of hydrogen peroxide and dilute hydrofluoric acid. Chromium maybe etched by ceric ammonium nitrate or other available etchants. Various other acids such as hydrochloric, sulfuric, phosphoric and nitric acids may be combined with the above in varying percentages from 1-10 % by volume to tailor the etching rates. The seed layer 1815 may also be removed by non wet chemical processes such as plasma etching or ion beam bombardment methods in vacuum chambers. For example, a seed layer 1630 of copper maybe etched by utilizing combinations of sulfuric acid, hydrogen peroxide and water in a 1:1:10 ratio. Ammonium persulfate or glacial acetic acid may also be utilized to remove copper seed layers selectively.

Also, the remaining portions of the patterned photoresist layer 1820 are removed, leaving the first seed layer segment (designated “SL1”) 1825 and the second seed layer segment (designated “SL2”) 1860. The remaining portions of the patterned photoresist layer 1820 are removed by commercially available stripping solutions, such as tetra methyl ammonium hydroxide (“TMAH”) based, carbonate based, acetone or phenolic stripping agents. The wafer is typically immersed in this stripping solution until all the remaining portions of the patterned photoresist layer 1820 are removed and the underlying layers are visually evident per technical data sheets provided by commercial vendors of the stripping chemistries. As stated above, these methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 134, a first magnetic layer is electroplated over the exposed portions of the patterned seed layer providing a first magnetic layer segment (designated “ML1”) 1830 over the first seed layer segment 1825 and a first magnetic layer segment (also designated “ML1”) 1865 over the second seed layer segment 1860. The free electroplating process includes submersing the micromagnetic device 1800 in a wet bath of electroplating material. The electroplating material grows on the first seed layer segment 1825 and the second seed layer segment 1860 as illustrated. The first magnetic layer segment 1830 extends laterally beyond the first seed layer segment 1825 by an extension EXT1 having an extension width WEXTI. Similarly, the first magnetic layer segment 1865 extends laterally beyond the second seed layer segment 1860 by an extension EXT1 having an extension width WEXTI. The critical dimensions are now controlled by the first seed layer segment 1825 and the second seed layer segment 1860 and the width WPL therebetween, which can vary depending on the number of electroplated layers formed thereover.

As mentioned above, the second free plating process uses the first seed layer segment 1825 and the second seed layer segment 1860 to create a line spacing dimension (“SP”) to prevent electrical contact (reliable electrical separation) between the lateral outermost segments (in this case, the third magnetic layer segments 1850, 1885) over the respective first and second seed layer segments 1825, 1860. The line spacing dimension is created by determining the width (“WPL”) between the first seed layer segment 1825 and the second seed layer segment 1860. Plating time controls the plating thickness and defines the line spacing dimension instead of thickness control by a thickness of the photoresist mold.

The first magnetic layer segments 1830, 1865 may include boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer segments 1830, 1865 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other end product.

Regarding the first magnetic layer segments 1830, 1865, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer segments 1830, 1865 include cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer segments 1830, 1865 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer segments 1830,

1865 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 135, a first semi-insulating layer 1835 is electroplated over the first magnetic layer segment 1830 in an area defined by the first seed layer segment 1825 to form a first semi-insulating layer segment (designated “SIL1”) 1835.

The first semi-insulating layer is also electroplated over the first magnetic layer segment 1865 in an area defined by the second seed layer segment 1860 to form a first semi- insulating layer segment (also designated “SIL1”) 1870. In an embodiment, the thickness of the first semi-insulating layer segments 1835, 1870 is about, but not limited to, 0.02 to 5 microns (“pm”). The first semi-insulating layer segment 1835 over the first seed layer segment 1825 extends laterally beyond the first magnetic layer segment 1830 by an extension EXT2 having an extension width WEXT2. Similarly, the first semi-insulating layer segment 1870 over the second seed layer segment 1860 extends laterally beyond the first magnetic layer segment 1865 by an extension EXT2 having an extension width WEXT2. The first semi-insulating layer segments 1835, 1870 may include polypyrrole with a low level of electrical conductivity. Following electroplating, the first semi-insulating layer segments 1835, 1870 may be cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer in the micromagnetic device, thereby simplifying the total manufacturing process.

Turning now to FIGURE 136, a second magnetic layer is electroplated over the first semi-insulating layer segment 1835 in an area defined by the first seed layer segment 1825 to form a second magnetic layer segment (designated “ML2”) 1840. The second magnetic layer is also electroplated over the first semi-insulating layer segment 1870 in an area defined by the second seed layer segment 1860 to form a second magnetic layer segment (also designated “ML2”) 1875. The second magnetic layer segment 1840 over the first seed layer segment 1825 extends laterally beyond the first semi-insulating layer segment 1835 by an extension EXT3 having an extension width WEXT3. Similarly, the second magnetic layer segment 1875 over the second seed layer segment 1860 extends laterally beyond the first semi-insulating layer segment 1870 by an extension EXT3 having an extension width WEXT3. The second magnetic layer segments 1840, 1875 are analogous to the first magnetic layer segments 1830, 1865 described above.

Turning now to FIGURE 137, a second semi-insulating layer is electroplated over the second magnetic layer segment 1840 in an area defined by the first seed layer segment 1825 to form a second semi-insulating layer segment (designated “SIL2”) 1845. The second semi-insulating layer is also electroplated over the second magnetic layer segment 1875 in an area defined by the second seed layer segment 1860 to form a second semi- insulating layer segment (also designated “SIL2”) 1880. The second semi-insulating layer segment 1845 over the first seed layer segment 1825 extends laterally beyond the second magnetic layer segment 1840 by an extension EXT4 having an extension width WEXT4. Similarly, the second semi-insulating layer segment 1880 over the second seed layer segment 1860 extends laterally beyond the second magnetic layer segment 1875 by an extension EXT4 having an extension width WEXT4. The second semi-insulating layer segments 1845, 1875 are analogous to the first semi-insulating layer segments 1835, 1870 described above. Turning now to FIGURE 138, a third magnetic layer is electroplated over the second semi-insulating layer segment 1845 in an area defined by the first seed layer segment 1825 to form a third magnetic layer segment (designated “ML3”) 1850. The third magnetic layer is also electroplated over the second semi-insulating layer segment 1880 in an area defined by the second seed layer segment 1860 to form a third magnetic layer segment (also designated “ML3”) 1885. The third magnetic layer segment 1850 over the first seed layer segment 1825 extends laterally beyond the second semi- insulating layer segment 1845 by an extension EXT5 having an extension width WEXTS. Similarly, the third magnetic layer segment 1885 over the second seed layer segment 1860 extends laterally beyond the second semi-insulating layer segment 1880 by an extension EXT5 having an extension width WEXTS. The third magnetic layer segments 1850, 1885 are analogous to the first magnetic layer segments 1830, 1865 described above.

Thus, a micromagnetic device (1800), and related method, have been introduced herein formed over a substrate (1805). In one embodiment, the micromagnetic device (1800) includes a first seed layer segment (1825) formed over the substrate (1805). The micromagnetic device (1800) also includes a first magnetic layer segment (1830) electroplated over and laterally beyond the first seed layer segment (1825). The micromagnetic device (1800) also includes a first semi-insulating layer segment (1835) electroplated over and laterally beyond the first magnetic layer segment (1830) over the first seed layer segment (1825). The micromagnetic device (1800) also includes a second magnetic layer segment (1840) electroplated over and laterally beyond the first semi- insulating layer segment (1835) over the first seed layer segment (1825). The micromagnetic device (1800) also includes a second semi-insulating layer segment (1845) electroplated over and laterally beyond the second magnetic layer segment (1840) over the first seed layer segment (1825). The micromagnetic device (1800) also includes a third magnetic layer segment (1850) electroplated over and laterally beyond the second semi-insulating layer segment (1845) over the first seed layer segment (1825). The micromagnetic device (1800) may include any number of magnetic layer segments with intervening (semi)-insulating layer segments.

A thickness (TH) of the electroplated layer segments (e.g., the first, second and third magnetic layer segments (1830, 1840, 1850) and the first and second semi-insulating layer segments (1835, 1845)) over the first seed layer segment (1825) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the first seed layer segment (1825). The micromagnetic device (1800) may also include an adhesive layer (1810) between the substrate (1805) and the first seed layer segment (1825). The electroplated layer segments extend laterally over the adhesive layer (1810) and laterally beyond the first seed layer segment (1825) to the adhesive layer (1810).

The micromagnetic device (1800) may also include a second seed layer segment (1860) formed over the substrate (1805). The micromagnetic device (1800) may also include another first magnetic layer segment (1865) electroplated over and laterally beyond the second seed layer segment (1860). The micromagnetic device (1800) may also include another first semi-insulating layer segment (1870) electroplated over and laterally beyond the another first magnetic layer segment (1865) over the second seed layer segment (1860). The micromagnetic device (1800) may also include another second magnetic layer segment (1875) electroplated over and laterally beyond the another first semi-insulating layer segment (1870) over the second seed layer segment (1860).

The micromagnetic device (1800) also includes another second semi-insulating layer segment (1880) electroplated over and laterally beyond the another second magnetic layer segment (1875) over the second seed layer segment (1860). The micromagnetic device (1800) also includes another third magnetic layer segment (1885) electroplated over and laterally beyond the another second semi-insulating layer segment (1880) over the second seed layer segment (1860). The micromagnetic device (1800) may include any number of magnetic layer segments with intervening (semi)-insulating layer segments.

A thickness (TH) of the electroplated layer segments (e.g., the another first, second and third magnetic layer segments (1865, 1875, 1885) and the another first and second semi-insulating layer segments (1870, 1880)) over the second seed layer segment (1860) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the second seed layer segment (1860). The first seed layer segment (1825) is separated from the second seed layer segment (1860) by a width (WPL) to provide a line spacing dimension (SP) between the magnetic layer segments over the respective seed layer segments.

In another embodiment, the method of forming the micromagnetic device (1800) includes forming an adhesive layer (1810) over a substrate (1805), and forming a seed layer (1815) over the adhesive layer (1810). The method also includes forming and patterning a photoresist layer (1820) over the seed layer (1815). The method also includes removing the seed layer (1815) in an area not protected by the photoresist layer (1820) to produce a first seed layer segment (1825). The method also includes removing the photoresist layer (1820). The method also includes electroplating a first magnetic layer segment (1830) over and laterally beyond the first seed layer segment (1825) (without being confined by a patterned photoresist layer or a photoresist mold). The method also includes electroplating a first semi-insulating layer segment (1835) over and laterally beyond the first magnetic layer segment (1830) over the first seed layer segment (1825) (without being confined by a patterned photoresist layer or a photoresist mold). The method also includes electroplating a second magnetic layer segment (1840) over and laterally beyond the first semi-insulating layer segment (1835) over the first seed layer segment (1825) (without being confined by a patterned photoresist layer or a photoresist mold). The method also includes electroplating a second semi-insulating layer segment (1845) over and laterally beyond the second magnetic layer segment (1840) over the first seed layer segment (1825) (without being confined by a patterned photoresist layer or a photoresist mold). The method also includes electroplating a third magnetic layer segment (1850) over and laterally beyond the second semi-insulating layer segment (1845) over the first seed layer segment (1825) (without being confined by a patterned photoresist layer or a photoresist mold).

A thickness (TH) of the electroplated layer segments (e.g., the first, second and third magnetic layer segments (1830, 1840, 1850) and the first and second semi-insulating layer segments (1835, 1845)) over the first seed layer segment (1825) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the first seed layer segment (1825). The method may also include forming a plurality of seed layer segments (e.g., a second layer segment (I860)) with electroplated layers thereover and maintaining a line spacing dimension (SP) therebetween.

Turning now to FIGURE 139, illustrated is a cross-sectional view of another embodiment of a micromagnetic device 1900. The micromagnetic device 1900 (e.g., a toroid inductor) is analogous to the micromagnetic device 800 illustrated and described with respect to FIGURES 50 to 66. The micromagnetic device 1900 is formed on a substrate 1905 with a first adhesive layer 1910 formed thereover. A first seed layer 1915 is formed over the first adhesive layer 1910, and a first metallic layer 1920 is formed over the first seed layer 1915. A first insulating layer segment 1925 is formed over the first metallic layer 1920, and an adhesive layer segment 1930 is formed over the first insulating layer segment 1925. A seed layer segment 1935 is formed over the adhesive layer segment 1930, and a first magnetic layer segment (designated “ML1”) 1940 is formed over the seed layer segment 1935. A semi-insulating layer segment (designated “SIL”) 1945 is formed over the first magnetic layer segment 1940, and a second magnetic layer segment (designated “ML2”) 1950 is formed over the semi-insulating layer segment 1945. A second insulating layer 1955 is formed over the second magnetic layer segment 1950, and second adhesive layer 1960 is formed over the second insulating layer 1955. A second seed layer 1965 is formed over the second adhesive layer 1960, and a second metallic layer 1970 is formed over the second seed layer 1965.

Turning now to FIGURES 140 to 152, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 1900 of FIGURE 139. Beginning with FIGURE 140, the micromagnetic device 1900 is constructed on a rigid or flexible substrate 1905 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 1910 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 1905 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 141, a first seed layer 1915 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 1910 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 1915 forms a conductive layer onto which a first metallic layer 1920 will be deposited in a following processing step. The thickness of the first seed layer 1915 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 1915 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 142, the first metallic layer 1920 is electroplated on the first seed layer 1915. The free electroplating process includes submersing the micromagnetic device 1900 in a wet bath of electroplating material. The electroplating material grows on the first seed layer 1915 as illustrated. The first metallic layer 1920 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the first metallic layer 1920 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns).

Turning now to FIGURE 143, a first insulating layer segment 1925 is patterned and deposited on at least a portion of the first metallic layer 1920. The first insulating layer segment 1925 may include a polymer (e.g., hard baked photoresist or polypyrrole) that can be electroplated or, alternatively, an aluminum oxide or silicon dioxide insulating layer can be deposited using a vacuum deposition process such as chemical or physical vapor deposition. In an embodiment, the thickness of the first insulating layer segment 1925 is about, but not limited to, 0.02 to 5 microns (“pm”).

The thickness of the first insulating layer segment 1925 can affect residual mechanical stress in the product due to differential thermal expansion of conductive, magnetic, and other layers during device processing steps. The thickness of the first insulating layer segment 1925 can be adjusted using simulation or experimental techniques to produce a die with low residual mechanical stress after completion of micromagnetic device processing.

The first insulating layer segment 1925 can be formed with a deposition of a patternable layer (e.g., photosensitive photoresist, screen printed polymer or laser patternable coating with no or very low electric conductivity) on top of the first metallic layer 1920, which is then hard cured by heating or other means. The first insulating layer segment 1925 can be a semi-insulating layer such as polypyrrole with a low level of electrical conductivity deposited by an electroplating process. Following electroplating, the first insulating layer segment 1925 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for the first insulating layer segment 1925 in the micromagnetic device 1900, thereby simplifying the total manufacturing process.

Turning now to FIGURE 144, an adhesive layer segment 1930 such as nickel, chromium, titanium, or titanium tungsten is patterned and deposited at about 100-600 angstroms (“A”) of thickness over at least a portion of the first insulating layer segment 1925 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 145, a seed layer segment 1935 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is patterned and deposited on to the adhesive layer segment 1930 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The seed layer segment 1935 forms a conductive layer onto which a first magnetic layer (designated “ML1”) 1940 will be deposited in a following processing step. The thickness of the seed layer segment 1935 is in the range 1000-4000 A preferably about 1500 A. The seed layer segment 1935 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer. The seed layer segment 1935 may be formed in a process similar to the first and second seed layer segments 1750, 1760 illustrated and described with respect to FIGURES 122, et seq.

Turning now to FIGURE 146, a first magnetic layer segment (designated “ML1”) 1940 is electroplated over the seed layer segment 1935. The free electroplating process includes submersing the micromagnetic device 1900 in a wet bath of electroplating material. The electroplating material grows on the seed layer segment 1935 as illustrated. The first magnetic layer segment 1940 extends laterally beyond the seed layer segment 1935 by an extension EXT1 having an extension width WEXTI . (See, e.g., FIGURE 134.)

The first magnetic layer segment 1940 may include boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer segment 1940 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other end product.

Regarding the first magnetic layer segment 1940, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer segment 1940 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer segment 1940 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer segment 1940 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 147, a semi-insulating layer segment (designated “SIL”) 1945 is electroplated over the first magnetic layer segment 1940 in an area defined by the seed layer segment 1935. The free electroplating process includes submersing the micromagnetic device 1900 in a wet bath of electroplating material. The electroplating material grows on the first magnetic layer segment 1940 as illustrated. In an embodiment, the thickness of the semi-insulating layer segment 1945 is about, but not limited to, 0.02 to 5 microns (“pm”)· The semi-insulating layer segment 1945 over the seed layer segment 1935 extends laterally beyond the first magnetic layer segment 1940 by an extension EXT2 having an extension width WEXT2. (See, e.g., FIGURE 135.)

The semi-insulating layer segment 1945 may include polypyrrole with a low level of electrical conductivity. Following electroplating, the semi-insulating layer segment 1945 may be cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer in the micromagnetic device, thereby simplifying the total manufacturing process.

Turning now to FIGURE 148, a second magnetic layer segment (designated “ME2”) 1950 is electroplated over the semi-insulating layer segment 1945 in an area defined by the seed layer segment 1935. The free electroplating process includes submersing the micromagnetic device 1900 in a wet bath of electroplating material. The electroplating material grows on the semi-insulating layer segment 1945 as illustrated. The second magnetic layer segment 1950 over the seed layer segment 1935 extends laterally beyond the semi-insulating layer segment 1945 by an extension EXT3 having an extension width WEXT3. (See, e.g., FIGURE 136.) The second magnetic layer segment 1950 is analogous to the first magnetic layer segment 1940 described above.

Turning now to FIGURE 149, a second insulating layer 1955 is patterned and deposited on the second magnetic layer segment 1950 and exposed portions of the first insulating layer segment 1925 without covering exposed portions of the first metallic layer 1920. The second insulating layer 1955 is analogous to and can be formed in a manner similar to the first insulating layer segment 1925 described above. In an embodiment, the thickness of the second insulating layer 1955 is about, but not limited to, 0.02 to 5 microns (“pm”).

Turning now to FIGURE 150, a second adhesive layer 1960 such as nickel, chromium, titanium, or titanium tungsten is patterned and deposited at about 100-600 angstroms (“A”) of thickness over the second insulating layer 1955 and exposed portions of the first metallic layer 1920 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 151, a second seed layer 1965 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 1960 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 1965 forms a conductive layer onto which a second metallic layer 1970 will be deposited in a following processing step. The thickness of the second seed layer 1970 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 1965 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 152, the second metallic layer 1970 is electroplated over the second seed layer 1965. The free electroplating process includes submersing the micromagnetic device 1900 in a wet bath of electroplating material. The electroplating material grows on the second seed layer 1965 as illustrated. The second metallic layer 1970 may be formed from copper, nickel, gold, aluminum, combination thereof (such as a stack multiple metallic layers including, for instance, copper, nickel and gold) or other electrically conductive metallic material. The thickness of the second metallic layer 1970 is, without limitation, about 20 microns (“pm”) (e.g., 0.02 - 100 microns). The second metallic layer 1970 is coupled to the first metallic layer 1920 via the second adhesive layer 1960. While the micromagnetic device 1900 was formed using the second free plating process described above with respect to FIGURES 122 to 128, the micromagnetic device 1900 may also be formed with slight variations using the first free plating process described above with respect to FIGURES 113 to 121.

Turning now to FIGURE 153, illustrated is a perspective view of the micromagnetic device 1900 of FIGURES 139 to 152. The perspective view illustrates windings 1975 (including the first and second metallic layers 1920, 1970) surrounding a magnetic core 1980 (including the first and second magnetic layer segments 1940, 1950). A plurality of leads 1985 provide connectivity and another device. Thus, a micromagnetic device (1900), and related method, have been introduced herein formed over a substrate (1905). In one embodiment, the micromagnetic device (1900) includes a first seed layer (1915) formed over the substrate (1905). The micromagnetic device (1900) also includes a first metallic layer (1920) electroplated over the first seed layer (1915). The micromagnetic device (1900) also includes a first insulating layer segment (1925) formed over the first metallic layer (1920). The micromagnetic device (1900) also includes a seed layer segment (1935) formed over the first insulating layer segment (1925). The micromagnetic device (1900) also includes a first magnetic layer segment (1940) electroplated over and laterally beyond the seed layer segment (1935). The micromagnetic device (1900) also includes a second insulating layer (1955) formed over the first magnetic layer segment (1940). The micromagnetic device (1900) also includes a second seed layer (1965) formed over the second insulating layer (1955). The micromagnetic device (1900) also includes a second metallic layer (1970) electroplated over the second seed layer (1965) and coupled to the first metallic layer (1920). The micromagnetic device (1900) may also include multiple magnetic layer segments (e.g., a second magnetic layer segment (1950) with an intervening insulating layers such as a semi-insulating layer segment (1945)). A thickness (TH) of the electroplated layer segments (e.g., the first and second magnetic layer segments (1940, 1950) and the semi-insulating layer segment (19845)) over the seed layer segment (1935) is substantially equal to a width (WEXT) of an extension (EXT) laterally beyond the seed layer segment (1935). The micromagnetic device (1900) may also include adhesive layers (e.g., first and second adhesive layers (1910, I960)) or adhesive layer segments (e.g., an adhesive layer segment (1930)) under respective seed layers (e.g., first and second seed layers (1915, 1965)) or seed layer segments (e.g., a seed layer segment (1935)). It should be understood that the layers and layer segments are analogous with possibly different patterning, dimensions and/or properties.

In another embodiment, the method of forming the micromagnetic device (1900) includes forming a first adhesive layer (1910) over a substrate (1905), and forming a first seed layer (1915) over the first adhesive layer (1910). The method also includes electroplating a first metallic layer (1920) over the first seed layer (1915) (without being confined by a patterned photoresist layer). The method also includes forming a first insulating layer segment (1925) over the first metallic layer (1920), and forming an adhesive layer segment (1930) over the first insulating layer segment (1925). The method also includes forming a seed layer segment (1935) over the adhesive layer segment (1930), and electroplating a first magnetic layer segment (1940) over and laterally beyond the seed layer segment (1935) (without being confined by a patterned photoresist layer). The method also includes electroplating a semi-insulating layer segment (1945) over and laterally beyond the first magnetic layer segment (1940) over the seed layer segment (1935) (without being confined by a patterned photoresist layer). The method also includes electroplating a second magnetic layer segment (1950) over and laterally beyond the semi-insulating layer segment (1945) over the seed layer segment (1935) (without being confined by a patterned photoresist layer). The method also includes forming a second insulating layer (1955) over the second magnetic layer segment (1950), and forming a second adhesive layer (1960) over the second insulating layer (1955). The method also includes forming a second seed layer (1965) over the second adhesive layer (1960), and electroplating a second metallic layer (1970) over the second seed layer (1965) (without being confined by a patterned photoresist layer). Representative dimensions of the electroplated layers are also described above with respect to FIGURES 129 to 138.

Turning now to FIGURE 154, illustrated is a cross-sectional view of another embodiment of a micromagnetic device 2000. The micromagnetic device 2000 (e.g., a spiral inductor) is analogous to the micromagnetic device 700 illustrated and described with respect to FIGURES 37 to 49. The micromagnetic device 2000 is formed on a substrate 2005 with a first adhesive layer segment 2010 formed thereover. A first seed layer segment 2015 is formed over the first adhesive layer segment 2010, and a first magnetic layer segment (designated “ML1”) 2025 is formed over the first seed layer segment 2015. A semi-insulating layer segment (designated “SIL”) 2030 is formed over the first magnetic layer segment 2025, and a second magnetic layer segment (designated “ML2”) 2035 is formed over the semi-insulating layer segment 2030. An insulating layer 2045 is formed over the second magnetic layer segment 2035, and a plurality of second adhesive layer segments 2050 are formed over the insulating layer 2045. A second seed layer segment 2055 is formed over each of the second adhesive layer segments 2050, and a first metallic layer segment 2065 is formed over each of the second seed layer segments 2055. A second metallic layer segment 2070 is formed over each of the first metallic layer segments 2065, and a third metallic layer segment 2075 is formed over each of the second metallic layer segments 2070.

Turning now to FIGURES 155 to 172, illustrated are cross-sectional views of an embodiment of forming the micromagnetic device 2000 of FIGURE 154. Beginning with FIGURE 155, the micromagnetic device 2000 is constructed on a rigid or flexible substrate 2005 such as silicon, glass, ceramic, molded polymer, flex or printed circuit board substrate, or other insulating material of approximately 0.1 to one (1) millimeter (“mm”) of thickness. A first adhesive layer 2010 such as nickel, chromium, titanium, or titanium tungsten is deposited at about 100-600 angstroms (“A”) of thickness on an upper surface of the substrate 2005 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 156, a first seed layer 2015 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the first adhesive layer 2010 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The first seed layer 2015 forms a conductive layer onto which a first magnetic layer segment (designated “ML1”) 2025 will be deposited in a following processing step. The thickness of the first seed layer 2015 is in the range 1000-4000 A preferably about 1500 A. The first seed layer 2015 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 157, a patterned photoresist (“PR”) layer 2020 is deposited over the first seed layer 2015. These are typically thin film photoresists, such as novolak, epoxy or thiol based formulations of standard thin film photoresists.

Examples of these are as supplied by Rohm and Haas’s SPR series of photoresists or Microchemicals series of AZ photoresists, or any other that is commonly used in fabrication of semiconductor devices. Typical processes for dispensing these on wafers involve spinning at a specified rpm (e.g., 100-3000 revolutions-per-minute (“rpm”)), exposing under a mask for a specified dose of ultraviolet (“UV”) radiation (e.g., 1-500 milliwatt over centimeter squared (“mW/cm ² ”)) to produce a pattern where the spun-on photoresist is exposed to the radiation, and developing (removing the resist by soaking the un-exposed resist in an alkaline chemistry). These methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 158, portions of the first seed layer 2015 not covered by the patterned photoresist layer 2020 are removed. The portions of the first seed layer 2015 may be removed by utilizing commercially available etchants. As an example, titanium and titanium tungsten can be etched by formulations of acids and oxidizing agents such as formulations of hydrogen peroxide and dilute hydrofluoric acid.

Chromium may be etched by ceric ammonium nitrate or other available etchants. Various other acids such as hydrochloric, sulfuric, phosphoric and nitric acids may be combined with the above in varying percentages from 1-10 % by volume to tailor the etching rates. The portions of the first seed layer 2015 may also be removed by non wet chemical processes such as plasma etching or ion beam bombardment methods in vacuum chambers. For example, portions of the first seed layer 2015 of copper may be etched by utilizing combinations of sulfuric acid, hydrogen peroxide and water in a 1:1:10 ratio. Ammonium persulfate or glacial acetic acid may also be utilized to remove copper seed layers selectively.

Also, the remaining portions of the patterned photoresist layer 2020 are removed, leaving the first seed layer segment 2015. The remaining portions of the patterned photoresist layer 2020 are removed by commercially available stripping solutions, such as tetra methyl ammonium hydroxide (“TMAH”) based, carbonate based, acetone or phenolic stripping agents. The wafer is typically immersed in this stripping solution until all the remaining portions of the patterned photoresist layer 2020 are removed and the underlying layers are visually evident per technical data sheets provided by commercial vendors of the stripping chemistries. As stated above, these methods are commonly known to practitioners of lithography and well established in literature.

Turning now to FIGURE 159, a first magnetic layer segment (designated “ML1”) 2025 is electroplated over the first seed layer segment 2015. The free electroplating process includes submersing the micromagnetic device 2000 in a wet bath of electroplating material. The electroplating material grows on the first seed layer segment 2015 as illustrated. The first magnetic layer segment 2025 extends laterally beyond the - Ill - first seed layer segment 2015 by an extension EXT1 having an extension width WEXT1. (See, e.g., FIGURE 134.)

The first magnetic layer segment 2025 may include boron in addition to iron, cobalt and phosphorous. The thickness of the first magnetic layer segment 2025 is, without limitation, about 0.1 to 15 microns (“pm”), which is defined by the skin depth of a range of frequencies from 1 to 30 megahertz (“MHz”). The thickness is constrained to reduce core loss due to induced eddy currents in this magnetically permeable and electrically conductive layer at the switching frequency of a power converter or other end product.

Regarding the first magnetic layer segment 2025, to provide an alloy with magnetic properties improved over alloys currently available, the quaternary alloy including iron, cobalt, boron and phosphorous is introduced. The first magnetic layer segment 2025 includes cobalt in the range of 1.0 - 8.0 atomic percent, boron in the range of 0.5 - 10 atomic percent, and iron in the range of 70 - 95 atomic percent. The first magnetic layer segment 2025 can further include phosphorus in the range of 3.5 - 25 atomic percent, thereby reducing the iron concentration. The alloy may also include trace amounts of sulfur, vanadium, chromium, rhodium, ruthenium, carbon, tin, bismuth, tungsten, copper, and/or combinations thereof, with a concentration of each in the range of one (1) to 1000 parts per million (“ppm”), to reduce stress and/or increase resistivity compared to the basic quaternary alloy without these trace elements.

The quaternary alloy employable with the first magnetic layer segment 2025 advantageously sustains a magnetic saturation flux density of about 1.2 - 2.0 tesla (12,000 - 20,000 gauss), and accommodates a power converter switching frequency of, without limitation, 20 MHz with low loss when electroplated in layers 0.1 to 15 mhi thick, each layer separated by an insulation layer (e.g., inorganic materials such as aluminum or silicon oxides and/or organic based materials such as, but not limited to, polymeric films) as set forth below. In comparison, soft ferrites of the past commonly used in the design of switch-mode power converters typically sustain a magnetic saturation flux density of only about 0.3 tesla. The quaternary alloy described herein is readily adaptable to a repeatable and continuing manufacturing process, and can provide long operational life in a typical application environment without substantial degradation of operating characteristics. The quaternary alloy can be electroplated with a sufficiently high current density to accommodate a low-cost manufacturing operation. The quaternary alloy can be readily electroplated in alternating layers with intervening insulating or semi-insulating layers onto a surface patterned, such as with a photoresist, to produce a micromagnetic device operable at a high switching frequency with a low level of power dissipation.

Turning now to FIGURE 160, a semi-insulating layer segment (designated “SIL”) 2030 is electroplated over the first magnetic layer segment 2025 in an area defined by the first seed layer segment 2015. The free electroplating process includes submersing the micromagnetic device 2000 in a wet bath of electroplating material. The electroplating material grows on the first magnetic layer segment 2025 as illustrated. In an embodiment, the thickness of the semi-insulating layer segment 2030 is about, but not limited to, 0.02 to 5 microns (“pm”)· The semi-insulating layer segment 2030 over the first seed layer segment 2015 extends laterally beyond the first magnetic layer segment 2025 by an extension EXT2 having an extension width WEXT2. (See, e.g., FIGURE 135.)

Turning now to FIGURE 161, a second magnetic layer segment (designated “ML2”) 2035 is electroplated over the semi-insulating layer segment 2030 in an area defined by the first seed layer segment 2015. The free electroplating process includes submersing the micromagnetic device 2000 in a wet bath of electroplating material. The electroplating material grows on the semi-insulating layer segment 2030 as illustrated.

The second magnetic layer segment 2035 over the first seed layer segment 2015 extends laterally beyond the semi-insulating layer segment 2030 by an extension EXT3 having an extension width WEXT3. (See, e.g., FIGURE 136.) The second magnetic layer segment 2035 is analogous to the first magnetic layer segment 2025 described above.

Turning now to FIGURE 162, the exposed portions of the first adhesive layer 2010 beyond the second magnetic layer segment 2035 are removed. For example, a first adhesive layer 2010 of chromium may be etched by ceric ammonium nitrate or other available etchants. Many such formulations to remove the aforementioned layers are found in academic publications, handbooks and recipes common to semiconductor manufacturing processes.

Turning now to FIGURE 163, a patterned photoresist (“PR”) layer 2040 is deposited over the second magnetic layer segment 2035 to the substrate 2005. These are typically thin film photoresists, such as novolak, epoxy or thiol based formulations of standard thin film photoresists. Examples of these are as supplied by Rohm and Haas’s SPR series of photoresists or Microchemicals series of AZ photoresists, or any other that is commonly used in fabrication of semiconductor devices. Typical processes for dispensing these on wafers involve spinning at a specified rpm (e.g., 100-3000 revolutions -per-minute (“rpm”)), exposing under a mask for a specified dose of ultraviolet (“UV”) radiation (e.g., 1-500 milliwatt over centimeter squared (“mW/cm ² ”)) to produce a pattern where the spun-on photoresist is exposed to the radiation, and developing (removing the resist by soaking the un-exposed resist in an alkaline chemistry). These methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 164, the photoresist layer 2040 is hard cured by heating or other means to form an insulating layer 2045. Following electroplating, the insulating layer 2045 is cured and annealed, which substantially reduces its conductivity. The result is a sufficiently high level of resistivity is obtained for an insulating layer 2045 in the micromagnetic device 2000, thereby simplifying the total manufacturing process. Of course, the insulating layer 2045 can be formed by other processes as set forth herein or otherwise.

Turning now to FIGURE 165, a second adhesive layer 2050 such as nickel, chromium, titanium, or titanium tungsten is patterned and deposited at about 100-600 angstroms (“A”) of thickness over the first insulating layer 1925 and exposed portions of the substrate 2005 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process.

Turning now to FIGURE 166, a second seed layer 2055 such as copper (or gold, titanium, titanium tungsten, nickel, nickel-iron, cobalt, ruthenium, platinum or titanium followed by a thin layer of copper or gold) is deposited on to the second adhesive layer 2050 employing a sputtering, evaporation, lamination, cladding, electroplating or electroless process for a later electroplating step. The second seed layer 2055 forms a conductive layer onto which a first metallic layer segment 2065 will be deposited in a following processing step. The thickness of the second seed layer 2055 is in the range 1000-4000 A preferably about 1500 A. The second seed layer 2055 may include multiple layers of like or different materials that can serve as a seed layer. Of course, other layers described herein may also include multiple layers of like or different materials that can serve the purpose of the respective layer.

Turning now to FIGURE 167, a patterned photoresist (“PR”) layer 2060 is deposited over the second seed layer 2055. These are typically thin film photoresists, such as novolak, epoxy or thiol based formulations of standard thin film photoresists. Examples of these are as supplied by Rohm and Haas’s SPR series of photoresists or Microchemicals series of AZ photoresists, or any other that is commonly used in fabrication of semiconductor devices. Typical processes for dispensing these on wafers involve spinning at a specified rpm (e.g., 100-3000 revolutions-per-minute (“rpm”)), exposing under a mask for a specified dose of ultraviolet (“UV”) radiation (e.g., 1-500 milliwatt over centimeter squared (“mW/cm ² ”)) to produce a pattern where the spun-on photoresist is exposed to the radiation, and developing (removing the resist by soaking the un-exposed resist in an alkaline chemistry). These methods are commonly known to practitioners of lithography and well established in literature and commercially available processing guidelines from a variety of suppliers of these products.

Turning now to FIGURE 168, portions of the second seed layer 2055 not covered by the patterned photoresist layer 2060 are removed. The portions of the second seed layer 2055 may be removed by utilizing commercially available etchants. As an example, titanium and titanium tungsten can be etched by formulations of acids and oxidizing agents such as formulations of hydrogen peroxide and dilute hydrofluoric acid.

Chromium maybe etched by ceric ammonium nitrate or other available etchants. Various other acids such as hydrochloric, sulfuric, phosphoric and nitric acids may be combined with the above in varying percentages from 1-10 % by volume to tailor the etching rates. The portions of the second seed layer 2055 may also be removed by non wet chemical processes such as plasma etching or ion beam bombardment methods in vacuum chambers. For example, portions of the second seed layer 2055 of copper maybe etched by utilizing combinations of sulfuric acid, hydrogen peroxide and water in a 1:1:10 ratio. Ammonium persulfate or glacial acetic acid may also be utilized to remove copper seed layers selectively.

Also, the remaining portions of the patterned photoresist layer 2060 are removed, leaving a plurality of second seed layer segments 2055. The remaining portions of the patterned photoresist layer 2060 are removed by commercially available stripping solutions, such as tetra methyl ammonium hydroxide (“TMAH”) based, carbonate based, acetone or phenolic stripping agents. The wafer is typically immersed in this stripping solution until all the remaining portions of the patterned photoresist layer 2060 are removed and the underlying layers are visually evident per technical data sheets provided by commercial vendors of the stripping chemistries. As stated above, these methods are commonly known to practitioners of lithography and well established in literature.

Turning now to FIGURE 169, the first metallic layer segments 2065 are electroplated over corresponding second seed layer segments 2055. The free electroplating process includes submersing the micromagnetic device 2000 in a wet bath of electroplating material. The electroplating material grows on the second seed layer segments 2055 as illustrated. Each of the first metallic layer segments 2065 extend laterally beyond the corresponding second seed layer segments 2055 by an extension EXT having an extension width WEXT- (See, e.g., FIGURE 122.) Each of the first metallic layer segments 2065 may be formed from copper or other electrically conductive metallic material. The thickness of each of the first metallic layer segments 2065 is less than 100 microns (“pm”) such as, without limitation, about 20 microns (“pm”).

Turning now to FIGURE 170, the second metallic layer segments 2070 are electroplated over corresponding first metallic layer segments 2065 in an area defined by corresponding second seed layer segments 2055. The free electroplating process includes submersing the micromagnetic device 2000 in a wet bath of electroplating material. The electroplating material grows on the first metallic layer segments 2065 as illustrated.

Each of the second metallic layer segments 2070 extend laterally beyond the corresponding first metallic layer segments 2065 by an extension EXT having an extension width WEXT. (See, e.g., FIGURE 122.) Each of the second metallic layer segments 2070 may be formed from nickel or other electrically conductive metallic material. The thickness of each of the second metallic layer segments 2070 is less than 5 microns (“pm”) such as, without limitation, about 2 microns (“pm”).

Turning now to FIGURE 171, the third metallic layer segments 2075 are electroplated over corresponding second metallic layer segments 2070 in an area defined by corresponding second seed layer segments 2055. The free electroplating process includes submersing the micromagnetic device 2000 in a wet bath of electroplating material. The electroplating material grows on the second metallic layer segments 2070 as illustrated. Each of the third metallic layer segments 2075 extend laterally beyond the corresponding second metallic layer segments 2070 by an extension EXT having an extension width WEXT. (See, e.g., FIGURE 122.) Each of the third metallic layer segments 2075 may be formed from gold or other electrically conductive metallic material. The thickness of each of the third metallic layer segments 2070 is less than 2 microns (“pm”) such as, without limitation, about 0.02 microns (“pm") Thus, the metallic layer segments including the first, second and third metallic layer segments 2065, 2070, 2075 are each formed from a stack of copper, nickel and gold with a combined thickness of about 22.02 microns (e.g., 0.02 - 100 microns).

Turning now to FIGURE 172, the exposed portions of the second adhesive layer 2050 beyond the metallic layer segments are removed providing second adhesive layer segments 2050. For example, a second adhesive layer 2050 of chromium maybe etched by ceric ammonium nitrate or other available etchants. Many such formulations to remove the aforementioned layers are found in academic publications, handbooks and recipes common to semiconductor manufacturing processes. While the micromagnetic device 2000 was formed using the second free plating process described above with respect to FIGURES 122 to 128, the micromagnetic device 2000 may also be formed with slight variations using the first free plating process described above with respect to FIGURES 113 to 121.

Turning now to FIGURE 173, illustrated is a perspective view of the micromagnetic device 2000 of FIGURES 154 to 172. The perspective view illustrates windings 2080 (including the first, second and third metallic layer segments 2065, 2070, 2075) surrounding a magnetic core 2085 (including the first and second magnetic layer segments 2025, 2035). A plurality of leads 2090 provide connectivity and another device.

Thus, a micromagnetic device (2000), and related method, have been introduced herein formed over a substrate (2005). In one embodiment, the micromagnetic device (1900) includes a first seed layer segment (2015) formed over the substrate (2005). The micromagnetic device (2000) also includes a first magnetic layer segment (2025) electroplated over and laterally beyond the first seed layer segment (2015). The micromagnetic device (2000) also includes an insulating layer (2045) formed over the first magnetic layer segment (2025). The micromagnetic device (2000) also includes a second seed layer segment (2055) formed over the insulating layer (2045). The micromagnetic device (2000) also includes a first metallic layer segment (2065) electroplated over and laterally beyond the second seed layer segment (2055). The micromagnetic device (2000) may also include multiple magnetic layer segments (e.g., a second magnetic layer segment (2035) with an intervening insulating layers such as a semi-insulating layer segment (2030)). The micromagnetic device (2000) may also include adhesive layer segments (e.g., first and second adhesive layer segments (2010, 2050)) under respective seed layer segments (e.g., first and second seed layer segments (2015, 2055)). The micromagnetic device (2000) may also include multiple metallic layer segments (e.g., second and third metallic layer segments (2070, 2075) of the same or different materials), and a plurality of second adhesive layer segments (2050), second seed layer segments (2055) and metallic layer segments (including first, second and third metallic layer segments (2065, 2070, 2075)) over the insulating layer (2045). It should be understood that the layers and layer segments are analogous with possible different patterning, dimensions and/or properties.

In another embodiment, the method of forming the micromagnetic device (2000) includes forming a first adhesive layer segment (2010) over a substrate (2005), and forming a first seed layer segment (2015) over the first adhesive layer segment (2010). The method also includes electroplating a first magnetic layer segment (2025) over and laterally beyond the first seed layer segment (2015) (without being confined by a patterned photoresist layer). The method also includes electroplating a semi-insulating layer segment (2030) over and laterally beyond the first magnetic layer segment (2025) over the first seed layer segment (2015) (without being confined by a patterned photoresist layer or photoresist mold). The method also includes electroplating a second magnetic layer segment (2035) over and laterally beyond the semi-insulating layer segment (2030) over the first seed layer segment (2015) (without being confined by a patterned photoresist layer or photoresist mold). The method also includes forming an insulating layer (2045) over the second magnetic layer segment (2035), and forming a second adhesive layer segment (2050) over the insulating layer (2045). The method also includes forming a second seed layer segment (2055) over the second adhesive layer segment (2050), and electroplating a first metallic layer segment (2065) over and laterally beyond the second seed layer segment (2055) (without being confined by a patterned photoresist layer or photoresist mold). The method also includes electroplating second and third metallic layer segments (2070, 2075) over and laterally beyond the first metallic layer segment (2065) and second metallic layer segment (2070), respectively (without being confined by a patterned photoresist layer or photoresist mold). The method may also include forming a plurality of second adhesive layer segments (2050), second seed layer segments (2055) and metallic layer segments (including first, second and third metallic layer segments (2065, 2070, 2075)) over the insulating layer (2045). Representative dimensions of the electroplated layers are also described above with respect to FIGURES 129 to 138.

Although the embodiments introduced herein and its advantages have been described in detail, it should be understood that various changes, substitutions, and alterations can be made herein without departing from the spirit and scope thereof as defined by the appended claims. Also, many of the features, functions, and steps of operating the same can be reordered, omitted, added, etc., and still fall within the broad scope of the various embodiments. Moreover, the scope of the various embodiments is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein can be utilized as well. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.