MICRO LIGHT-EMITTING DIODE AND DISPLAY APPARATUS HAVING SAME

WIPO Patent Application WO/2024/082074

A1

A micro light-emitting diode. The micro light-emitting diode has a semiconductor layer sequence, wherein a back side of the semiconductor layer sequence is provided with a first metal electrode and a second metal electrode, and comprises a first mesa in a groove, a second mesa, and a groove side wall located between the first mesa and the second mesa, the first metal electrode being arranged on the first mesa; a first-type semiconductor layer in the semiconductor layer sequence is a support layer; the distance from a bottom surface of the groove to a front side of the semiconductor layer sequence is not greater than four microns; on a horizontal projection plane of a long side of the support layer, the semiconductor layer sequence is at least partially penetrated by the groove; and the first metal electrode extends along the long side of the support layer, and specifically extends from the groove side wall to the second mesa, thereby improving the structural strength of the micro light-emitting diode.

WO/2022/097785	LIGHT-EMITTING DIODE AND DISPLAY DEVICE COMPRISING SAME
JP2011216643	METHOD OF MANUFACTURING THIN FILM METAL OXIDE
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YE XUEPING (CN)
HSIA TE-LING (CN)
LEE CHIA-EN (CN)
WU ZHENG (CN)

PCT/CN2022/110617

April 25, 2024

October 21, 2022

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QUANZHOU SANAN SEMICONDUCTOR TECH CO LTD (CN)

H01L33/38

US20130049051A1	2013-02-28
CN105895758A	2016-08-24
CN106229400A	2016-12-14
CN213184332U	2021-05-11
CN113488569A	2021-10-08
CN114188454A	2022-03-15
CN114824000A	2022-07-29
CN112909136A	2021-06-04
CN115020567A	2022-09-06

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