Title:
METHODS FOR REDUCING SURFACE DEFECTS IN ACTIVE FILM LAYERS
Document Type and Number:
WIPO Patent Application WO/2023/201615
Kind Code:
A1
Abstract:
A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius. The piezoelectric film layer has a surface cone defect count of less than or equal to 2 per 100microns 2 of surface area of the piezoelectric film layer. In some embodiments, no vacuum breaks occur between depositions of the first seed layer, the intermediate film layer, the second seed layer, and the piezoelectric film layer.
Inventors:
GAO MING (CN)
SUN LIZHONG (US)
YANG XIAODONG (CN)
SUN LIZHONG (US)
YANG XIAODONG (CN)
Application Number:
PCT/CN2022/088119
Publication Date:
October 26, 2023
Filing Date:
April 21, 2022
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
GAO MING (CN)
GAO MING (CN)
International Classes:
H01L41/083; H01L41/27
Domestic Patent References:
| WO2022040869A1 | 2022-03-03 | |||
| WO2021134606A1 | 2021-07-08 |
Foreign References:
| CN109905098A | 2019-06-18 | |||
| CN111969974A | 2020-11-20 | |||
| US20050185026A1 | 2005-08-25 | |||
| US20210259103A1 | 2021-08-19 | |||
| US20210405399A1 | 2021-12-30 |
Attorney, Agent or Firm:
LECOME INTELLECTUAL PROPERTY AGENT LTD. (CN)
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