Title:
METHODS FOR FORMING DRAM DEVICES WITHOUT TRENCH FILL VOIDS
Document Type and Number:
WIPO Patent Application WO/2024/077525
Kind Code:
A1
Abstract:
Disclosed herein are approaches for forming dynamic DRAM devices without trench fill voids. A method may include providing a plurality of trenches in a substrate, the plurality of trenches defining a plurality of device structures, and depositing a plurality of layers over the device structures. The layers may include a first layer over the device structures, a second layer over the first layer, and a third layer over the second layer. The method may further include forming a plurality of contact trenches through the plurality of layers to expose one or more device structures of the plurality of device structures, and directing ions into a sidewall of the trenches at a non-zero angle, wherein the ions impact the third layer without impacting the second layer. The method may further include forming a fill material within the trenches after the ions are directed into the sidewall of the trenches.
Inventors:
LU JUN-FENG (US)
GU SIPENG (US)
HONG LIANG (US)
GU SIPENG (US)
HONG LIANG (US)
Application Number:
PCT/CN2022/124946
Publication Date:
April 18, 2024
Filing Date:
October 12, 2022
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
LU JUN FENG (US)
LU JUN FENG (US)
International Classes:
H10B12/00; C23C14/04; C23C16/04
Foreign References:
| CN108962894A | 2018-12-07 | |||
| US20150093907A1 | 2015-04-02 | |||
| CN110957213A | 2020-04-03 | |||
| US20070072388A1 | 2007-03-29 | |||
| CN107706145A | 2018-02-16 | |||
| CN109979940A | 2019-07-05 |
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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