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Title:
METHOD FOR PRODUCING TANTALUM NITRIDE MATERIAL, AND TANTALUM NITRIDE MATERIAL
Document Type and Number:
WIPO Patent Application WO/2024/070179
Kind Code:
A1
Abstract:
A method for producing a tantalum nitride material that includes a nitriding step that heats a precursor containing a lithium tantalum composite oxide in the presence of a nitrogen compound.

More Like This:
WO/1995/013891MAKING QUANTUM DOT PARTICLES OF UNIFORM SIZE
Inventors:
TAKAHASHI MASATO (JP)
DOMEN KAZUNARI (JP)
HISATOMI TAKASHI (JP)
Application Number:
PCT/JP2023/027418
Publication Date:
April 04, 2024
Filing Date:
July 26, 2023
Export Citation:
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Assignee:
JX METALS CORP (JP)
UNIV SHINSHU (JP)
International Classes:
C01B21/06; B01J27/24; B01J37/04; B01J37/08
Foreign References:
CN111020692A2020-04-17
CN108998832A2018-12-14
JP2019037918A2019-03-14
JP2017039115A2017-02-23
JP2016064949A2016-04-28
JP2007229627A2007-09-13
Other References:
SEO JEONGSUK, TAKATA TSUYOSHI, NAKABAYASHI MAMIKO, HISATOMI TAKASHI, SHIBATA NAOYA, MINEGISHI TSUTOMU, DOMEN KAZUNARI: "Mg–Zr Cosubstituted Ta 3 N 5 Photoanode for Lower-Onset-Potential Solar-Driven Photoelectrochemical Water Splitting", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, AMERICAN CHEMICAL SOCIETY, vol. 137, no. 40, 14 October 2015 (2015-10-14), pages 12780 - 12783, XP055950812, ISSN: 0002-7863, DOI: 10.1021/jacs.5b08329
SAYAKA SUZUKI: "Two-Step Fabrication of Visible-Light-Driven Ta3N5 Crystal Layers for Water-Splitting Photoanode ", 73RD AUTUMN MEETING, 2012; THE JAPAN SOCIETY OF APPLIED PHYSICS, 1 January 2012 (2012-01-01), pages 01 - 068, XP093154242
Attorney, Agent or Firm:
IP FIRM SHUWA (JP)
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