Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2024/085030
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a composition which is capable of forming a film that has excellent bending resistance and excellent solubility during liquid discharging; and a composition. The present invention provides a method for producing a semiconductor substrate, the method comprising a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate, a step in which a resist pattern is directly or indirectly formed on the resist underlayer film that has been formed by the application step, and a step in which etching is performed using the resist pattern as a mask, wherein: the resist underlayer film forming composition contains a solvent and a compound having a nitro group; the compound having a nitro group is a polymer having a repeating unit that comprises a nitro group and an aromatic ring, an aromatic ring-containing compound having a nitro group and a molecular weight of 600 to 3,000, or a combination thereof; the content ratio of the compound having a nitro group in the components of the resist underlayer film forming composition excluding the solvent is 10% by mass or more.
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Inventors:
TSUJI TAKASHI (JP)
NAKATSU HIROKI (JP)
KATAGIRI TAKASHI (JP)
ABE SHINYA (JP)
NAGANAWA ATSUKO (JP)
NAKATSU HIROKI (JP)
KATAGIRI TAKASHI (JP)
ABE SHINYA (JP)
NAGANAWA ATSUKO (JP)
Application Number:
PCT/JP2023/036847
Publication Date:
April 25, 2024
Filing Date:
October 11, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11
Domestic Patent References:
| WO2017188263A1 | 2017-11-02 |
Foreign References:
| JP2019528347A | 2019-10-10 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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