Title:
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/277103
Kind Code:
A1
Abstract:
A production method according to the present disclosure comprises: a grinding step in which a group 13 element nitride crystal is contained in an opening of a plate-like carrier, and at least one main surface of the crystal is ground; and a CMP step in which the main surface after grinding is subjected to chemical mechanical polishing (CMP), while keeping the substrate contained in the carrier. The main surface is a semi-polar surface, a non-polar or an N surface; the slurry used in the CMP step is alkaline; and the carrier is formed of a carbon fiber reinforced plastic.
Inventors:
YOSHIMORI HIGUCHI MARI (JP)
ONO YURI (JP)
ONO YURI (JP)
Application Number:
PCT/JP2022/026095
Publication Date:
January 05, 2023
Filing Date:
June 29, 2022
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
H01L21/304; B24B1/00; B24B7/04; B24B37/30; B24B41/06
Domestic Patent References:
WO2017010166A1 | 2017-01-19 | |||
WO2015050218A1 | 2015-04-09 |
Foreign References:
JP2005510072A | 2005-04-14 | |||
CN109866084A | 2019-06-11 | |||
JP2018070415A | 2018-05-10 | |||
JP2017098322A | 2017-06-01 | |||
JP2019162706A | 2019-09-26 | |||
US20040235402A1 | 2004-11-25 |
Attorney, Agent or Firm:
BUNA PATENT ATTORNEYS (JP)
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