Title:
METHOD FOR PREPARING A SINGLE-DOMAIN THIN LAYER MADE OF LITHIUM-CONTAINING FERROELECTRIC MATERIAL
Document Type and Number:
WIPO Patent Application WO/2024/022723
Kind Code:
A1
Abstract:
The invention relates to a method for preparing a single-domain thin layer (4) made of lithium-containing ferroelectric material. The method comprises providing a first single-domain layer (8) made of lithium-containing ferroelectric material, said layer being bonded to a carrier (2), the first layer (8) having a lithium-rich surface thickness (11). The preparation method comprises a first step of wet cleaning of the free side (9) of the first layer (8), the cleaning step being able to remove the lithium-rich surface layer. It then comprises a second step of preparation that aims to remove or prevent the appearance of lithium-rich and hydrogen-rich dendrites (12) liable to nucleate on the free side (9) of the first layer (8) when it is devoid of the lithium-rich surface layer.
Inventors:
DROUIN ALEXIS (FR)
GUERIN RENALD (FR)
BROEKAART MARCEL (FR)
CAPELLO LUCIANA (FR)
LAKHAL SABRINA (FR)
GUERIN RENALD (FR)
BROEKAART MARCEL (FR)
CAPELLO LUCIANA (FR)
LAKHAL SABRINA (FR)
Application Number:
PCT/EP2023/067802
Publication Date:
February 01, 2024
Filing Date:
June 29, 2023
Export Citation:
Assignee:
SOITEC SILICON ON INSULATOR (FR)
International Classes:
H10N30/01; H03H3/02; H03H3/08; H10N30/07; H10N30/072; H10N30/086
Domestic Patent References:
| WO2020200986A1 | 2020-10-08 |
Foreign References:
| FR3094573A1 | 2020-10-02 | |||
| FR3116652A1 | 2022-05-27 | |||
| US20100088868A1 | 2010-04-15 |
Attorney, Agent or Firm:
IP TRUST (FR)
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