Title:
METHOD FOR PREPARING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND THREE-DIMENSIONAL STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/245773
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a method for preparing a semiconductor structure, a semiconductor structure, and a three-dimensional structure. The method comprises: providing a substrate, which comprises a first region and a second region, wherein a stacked layer structure is formed on the substrate, and the stacked layer structure comprises a first semiconductor layer and a second semiconductor layer, which are sequentially and alternately stacked in a direction perpendicular to a substrate plane; etching the stacked layer structure to respectively etch the portion of the first semiconductor layer and the portion of the second semiconductor layer that are located in the second region into a first sub-portion extending in a first direction and a third sub-portion extending in the first direction, wherein the first semiconductor layer and the second semiconductor layer, which are retained on the first region, respectively form a second sub-portion extending in a second direction and a fourth sub-portion extending in the second direction, the first direction is a direction parallel to the substrate plane, and the second direction is parallel to the substrate plane and perpendicular to the first direction; removing the third sub-portion; and forming a first dielectric layer, wherein the first dielectric layer at least fills a gap between adjacent first sub-portions.
Inventors:
LI XIAOJIE (CN)
Application Number:
PCT/CN2022/105645
Publication Date:
December 28, 2023
Filing Date:
July 14, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L21/8242; H01L27/1157
Foreign References:
| CN111415939A | 2020-07-14 | |||
| CN113410179A | 2021-09-17 | |||
| CN111415938A | 2020-07-14 | |||
| CN110211965A | 2019-09-06 | |||
| US20210233767A1 | 2021-07-29 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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