Title:
METHOD FOR PREPARING MONOCRYSTALLINE SILICON MATERIAL BY MEANS OF HIGH-TEMPERATURE ELECTRODEPOSITION OF MOLTEN SALT
Document Type and Number:
WIPO Patent Application WO/2022/001037
Kind Code:
A1
Abstract:
A method for preparing a monocrystalline silicon film and a silicon P-N junction by means of the high-temperature electrodeposition of a molten salt, which method relates to the technical field of semiconductors. A CaCl2-SiO2-CaO system or a CaCl2-CaSiO3 system can be used as a raw material, a dopant is added thereto, and same is subjected to epitaxial growth on a monocrystalline substrate by means of electrodeposition, under the conditions of a constant current, a constant voltage or a pulsed current, of an inert gas atmosphere and 850ºC, so as to obtain a monocrystalline silicon film material.
Inventors:
ZOU XINGLI (CN)
PANG ZHONGYA (CN)
TANG WEI (CN)
LI XIANG (CN)
ZHANG XUEQIANG (CN)
WANG SHUJUAN (CN)
LU MINGHUI (CN)
XU QIAN (CN)
LU XIONGGANG (CN)
PANG ZHONGYA (CN)
TANG WEI (CN)
LI XIANG (CN)
ZHANG XUEQIANG (CN)
WANG SHUJUAN (CN)
LU MINGHUI (CN)
XU QIAN (CN)
LU XIONGGANG (CN)
Application Number:
PCT/CN2020/139729
Publication Date:
January 06, 2022
Filing Date:
December 26, 2020
Export Citation:
Assignee:
UNIV SHANGHAI (CN)
International Classes:
C30B9/14; C25D7/12; C25D9/08; C30B29/06
Foreign References:
| CN111575782A | 2020-08-25 | |||
| CN110629241A | 2019-12-31 | |||
| CN110565107A | 2019-12-13 |
Attorney, Agent or Firm:
FANG & ASSOCIATES (CN)
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