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Title:
METHOD FOR MANUFACTURING TRANSFER MASK SUBSTRATE, TRANSFER MASK SUBSTRATE, AND TRANSFER MASK
Document Type and Number:
WIPO Patent Application WO/2004/044967
Kind Code:
A1
Abstract:
Accuracy of position of a mask pattern is improved by reducing stress change in a thin film layer which occurs during a manufacturing process of a transfer mask. A method for manufacturing a transfer mask is characterized by comprising a further step before formation of a resist layer in which step a stress controlling layer is formed on a thin film layer for offsetting the stress change in the thin film layer which occurs during the manufacturing process of the mask, and by comprising another step wherein the stress controlling layer or the like is etched using a resist pattern as the etching mask.

Inventors:
AMEMIYA ISAO (JP)
Application Number:
PCT/JP2003/014088
Publication Date:
May 27, 2004
Filing Date:
November 05, 2003
Export Citation:
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Assignee:
HOYA CORP (JP)
AMEMIYA ISAO (JP)
International Classes:
B81C99/00; G03C5/00; G03F1/20; G03F9/00; H01L21/027; (IPC1-7): H01L21/027; G03F1/14
Foreign References:
JP2003068615A2003-03-07
JP2002075836A2002-03-15
EP0542519A11993-05-19
EP1065566A22001-01-03
JPH05299326A1993-11-12
Attorney, Agent or Firm:
Hagihara, Makoto (1-33 Shiba 2-chom, Minato-ku Tokyo, JP)
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