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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/080256
Kind Code:
A1
Abstract:
The present invention discloses a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises: a first laminate formation step for forming a first laminate in which a semiconductor wafer, a resin layer including a resin that becomes a lower-molecular-weight resin when irradiated with light, and a base layer are provided in the stated order; a second laminate formation step for forming a second laminate by polishing the rear surface of the semiconductor wafer of the first laminate; and a third laminate formation step for forming a third laminate by removing the base layer from the second laminate, the third laminate including the resin layer and the semiconductor wafer with the polished rear surface.

Inventors:
MIYAMOTO YUKI (JP)
MOROSAKI TOMOHITO (JP)
SUZUKI KATSUHIKO (JP)
WADA MASAYUKI (JP)
WATANABE MASAHITO (JP)
SAKAMOTO KEIICHI (JP)
KONDO HIDEKAZU (JP)
SAITO KOICHI (JP)
Application Number:
PCT/JP2023/036618
Publication Date:
April 18, 2024
Filing Date:
October 06, 2023
Export Citation:
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Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/304; H01L21/301
Domestic Patent References:
WO2022080409A12022-04-21
Foreign References:
JP2016086158A2016-05-19
JP2019102710A2019-06-24
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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