Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/080256
Kind Code:
A1
Abstract:
The present invention discloses a method for manufacturing a semiconductor device. This method for manufacturing a semiconductor device comprises: a first laminate formation step for forming a first laminate in which a semiconductor wafer, a resin layer including a resin that becomes a lower-molecular-weight resin when irradiated with light, and a base layer are provided in the stated order; a second laminate formation step for forming a second laminate by polishing the rear surface of the semiconductor wafer of the first laminate; and a third laminate formation step for forming a third laminate by removing the base layer from the second laminate, the third laminate including the resin layer and the semiconductor wafer with the polished rear surface.
Inventors:
MIYAMOTO YUKI (JP)
MOROSAKI TOMOHITO (JP)
SUZUKI KATSUHIKO (JP)
WADA MASAYUKI (JP)
WATANABE MASAHITO (JP)
SAKAMOTO KEIICHI (JP)
KONDO HIDEKAZU (JP)
SAITO KOICHI (JP)
MOROSAKI TOMOHITO (JP)
SUZUKI KATSUHIKO (JP)
WADA MASAYUKI (JP)
WATANABE MASAHITO (JP)
SAKAMOTO KEIICHI (JP)
KONDO HIDEKAZU (JP)
SAITO KOICHI (JP)
Application Number:
PCT/JP2023/036618
Publication Date:
April 18, 2024
Filing Date:
October 06, 2023
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/304; H01L21/301
Domestic Patent References:
WO2022080409A1 | 2022-04-21 |
Foreign References:
JP2016086158A | 2016-05-19 | |||
JP2019102710A | 2019-06-24 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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