METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR EPITAXIAL WAFER, AND COMPOSITE SUBSTRATE FOR NITRIDE SEMICONDUCTOR EPITAXIAL WAFER

WIPO Patent Application WO/2024/084836

A1

The present invention is a method for manufacturing a nitride semiconductor epitaxial wafer that comprises: a composite substrate comprising a ceramic-containing substrate and a single-crystal layer bonded to the ceramic-containing substrate; and a nitride semiconductor layer epitaxially grown on the composite substrate. The method includes: a step in which, as the composite substrate, a composite substrate is prepared that is provided with a ceramic-containing substrate with a coefficient of thermal expansion within ±10% of the coefficient of thermal expansion of the nitride semiconductor layer, and that has a shape which satisfies the conditions −150 < Bow (μm) ≤ 40, Warp (μm) < 150, and Warp (μm) < 90 − Bow (μm) shape; a step in which an intermediate layer that imparts compressive stress to the nitride semiconductor layer is formed on the single-crystal layer of the composite substrate; and a step in which the nitride semiconductor layer is epitaxially grown on the intermediate layer. The film thickness of the intermediate layer is adjusted so that the nitride semiconductor epitaxial wafer has a shape that satisfies the conditions Warp (μm) < 50 and |Bow (μm)| ≤ 40. This provides a method for manufacturing a nitride semiconductor epitaxial wafer with low curvature and no cracking or peeling.

TSUCHIYA KEITARO (JP)
KUBONO IPPEI (JP)
HAGIMOTO KAZUNORI (JP)

PCT/JP2023/031688

April 25, 2024

August 31, 2023

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SHINETSU HANDOTAI KK (JP)

C30B29/38; C30B25/18; H01L21/20; H01L21/205

WO2022191079A1

2022-09-15

JP2018041851A

2018-03-15

YOSHIMIYA Mikio et al. (JP)

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