Title:
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL WAFER
Document Type and Number:
WIPO Patent Application WO/2023/119703
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a method and apparatus for producing a semiconductor crystal wafer, the method and apparatus being capable of easily and reliably producing a semiconductor crystal wafer of high quality. A method for producing a semiconductor crystal wafer according to the present invention enables the achievement of an Si wafer that is obtained by slicing an Si ingot, which has been ground into a cylindrical shape, into Si wafers with the surface of each Si wafer being subjected to high accuracy grinding. This method for producing a semiconductor crystal wafer comprises: a groove processing step (STEP 100 in Fig. 1); a cutting step (STEP 120 in Fig. 1); a first surface processing step (STEP 120 in Fig. 1); and a second surface processing step (STEP 130 in Fig. 1).
Inventors:
SAKAI SHINSUKE (JP)
CHIBA TETSUYA (JP)
CHIBA TETSUYA (JP)
Application Number:
PCT/JP2022/028053
Publication Date:
June 29, 2023
Filing Date:
July 19, 2022
Export Citation:
Assignee:
SUCCESS CO LTD (JP)
DRYCHEMICALS CO LTD (JP)
DRYCHEMICALS CO LTD (JP)
International Classes:
B24B27/06; B24B19/02; B24B41/06; B28D5/04; H01L21/304
Foreign References:
| JP2010099808A | 2010-05-06 | |||
| JPS5548930A | 1980-04-08 | |||
| JP2016074068A | 2016-05-12 | |||
| JP2002307283A | 2002-10-23 | |||
| JP2000153517A | 2000-06-06 | |||
| JP2006305685A | 2006-11-09 | |||
| JP2011526215A | 2011-10-06 | |||
| JP2012250328A | 2012-12-20 | |||
| JP2020053610A | 2020-04-02 | |||
| JP2014097542A | 2014-05-29 |
Attorney, Agent or Firm:
TAKITA SABURO LAW OFFICE (JP)
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