Title:
MEMORY MODULE AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/236996
Kind Code:
A1
Abstract:
The present application relates to the technical field of computers. Disclosed are a memory module and an electronic device. In the memory module, the number of DRAM particles in a rank is increased so as to reduce the number of bits of data that is accessed from a single memory particle during a one step access process, thereby ensuring that when one memory particle has a fault, the number of bits of erroneous data among data, which is read by a processor during each sampling cycle, is less than or equal to 4; or when the number of the memory particles is not increased, the access to the same bank of one memory particle is converted into the access to two banks of the particle, such that the volume of data, which is accessed from a single bank during a one step access process, is reduced, thereby ensuring that when one bank has a fault, the number of bits of the erroneous data among the data, which is read by the processor during each sampling cycle, is less than or equal to 4. Therefore, the processor can perform error correction on the error data, and the stability of the memory module is improved.
Inventors:
LI BUCHAN (CN)
LIN SIAN JHENG (CN)
CHEN CAN (CN)
WANG SHENG (CN)
LIN SIAN JHENG (CN)
CHEN CAN (CN)
WANG SHENG (CN)
Application Number:
PCT/CN2023/098867
Publication Date:
December 14, 2023
Filing Date:
June 07, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G11C29/42
Foreign References:
| CN104347122A | 2015-02-11 | |||
| CN112579342A | 2021-03-30 | |||
| JP2003337760A | 2003-11-28 | |||
| US20170060680A1 | 2017-03-02 | |||
| US20170060681A1 | 2017-03-02 |
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