Title:
MEMORY CELL AND MANUFACTURING METHOD THEREFOR, AND DYNAMIC MEMORY, STORAGE APPARATUS AND READ-WRITE METHOD
Document Type and Number:
WIPO Patent Application WO/2024/032123
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are a memory cell and a manufacturing method therefor, and a dynamic memory, a storage apparatus and a read-write method. In the memory cell, a source electrode, a drain electrode, a semiconductor layer, a main gate electrode, a back gate electrode, etc. for a transistor, and a capacitor electrode and the back gate electrode form a storage capacitor. In the memory cell, the back gate electrode and the source electrode form an auxiliary capacitor for increasing the capacitance of the memory cell, thereby facilitating the reduction of the refresh frequency of a dynamic memory. During the process of reading the dynamic memory, data signals which are read by means of a bit line in a state "1" and a state "0" have a great difference, thereby enhancing the anti-noise performance of the dynamic memory; and no signal can be detected in the state "0", and therefore state determination can be realized by means of measuring a current or measuring a voltage, thereby facilitating the design of a peripheral measurement circuit according to specific requirements.
Inventors:
ZHU ZHENGYONG (CN)
KANG BOKMOON (CN)
WANG GUILEI (CN)
ZHAO CHAO (CN)
KANG BOKMOON (CN)
WANG GUILEI (CN)
ZHAO CHAO (CN)
Application Number:
PCT/CN2023/098858
Publication Date:
February 15, 2024
Filing Date:
June 07, 2023
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H10B12/00; G11C11/402; G11C11/4094
Foreign References:
| CN116209247A | 2023-06-02 | |||
| CN114709211A | 2022-07-05 | |||
| CN113380290A | 2021-09-10 | |||
| US20110260158A1 | 2011-10-27 |
Attorney, Agent or Firm:
LIFANG & PARTNERS (CN)
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