Title:
MEMORY CELL, MEMORY, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/082381
Kind Code:
A1
Abstract:
A memory cell, a memory, and an electronic device, relating to the technical field of semiconductors. The memory cell (200) comprises a first transistor (210) and a second transistor (220) which are arranged in a first direction; the first transistor (210) comprises a first gate (211), a first semiconductor layer (212), and a second gate (213) which are arranged in the first direction; the second transistor (220) comprises a third gate (221) and a second semiconductor layer (222) surrounding the third gate (221), the second semiconductor layer (222) comprises a channel (223) and a first electrode (224) and a second electrode (225) which are connected by means of the channel (223), and the second electrode (225) is connected to the second gate (213).
Inventors:
DAI JIN (CN)
ZHU ZHENGYONG (CN)
ZHU ZHENGYONG (CN)
Application Number:
PCT/CN2022/134673
Publication Date:
April 25, 2024
Filing Date:
November 28, 2022
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L27/00
Foreign References:
| CN103367369A | 2013-10-23 | |||
| CN111146236A | 2020-05-12 | |||
| CN114864582A | 2022-08-05 | |||
| US20130248956A1 | 2013-09-26 |
Attorney, Agent or Firm:
BEIJING SAN GAO YONG XIN INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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