Title:
MANUFACTURING METHOD FOR CONDUCTIVE FILM, MANUFACTURING METHOD FOR MASK, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, DEFECT EXAMINATION METHOD FOR CONDUCTIVE FILM, AND DEFECT EXAMINATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/058243
Kind Code:
A1
Abstract:
The present invention provides a manufacturing method for a conductive film having high accuracy in detecting a defect. The manufacturing method includes an examination step for irradiating a conductive film with a laser beam to examine a defect in the conductive film. In the examination step, the conductive film is irradiated with a laser beam having a wavelength by which an extinction coefficient k of the conductive film becomes 0.2 or less.
Inventors:
KANAME SHUNSUKE (JP)
TAKAHASHI TOSHIYA (JP)
TAKAHASHI TOSHIYA (JP)
Application Number:
PCT/JP2023/033497
Publication Date:
March 21, 2024
Filing Date:
September 14, 2023
Export Citation:
Assignee:
MITSUBISHI CHEM CORP (JP)
International Classes:
B32B27/00; G01N21/95; G03F1/72; G03F7/20; H01L21/66
Domestic Patent References:
| WO2011062279A1 | 2011-05-26 |
Foreign References:
| JP2012063330A | 2012-03-29 | |||
| JPH11101624A | 1999-04-13 | |||
| JPH0424541A | 1992-01-28 | |||
| JP2007192716A | 2007-08-02 | |||
| JPH0426845A | 1992-01-30 | |||
| JP2008164336A | 2008-07-17 |
Attorney, Agent or Firm:
TAZAKI Akira et al. (JP)
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