Title:
MANUAL INGOT BONDING METHOD FOR 12-INCH SEMICONDUCTOR WAFER
Document Type and Number:
WIPO Patent Application WO/2023/280201
Kind Code:
A1
Abstract:
A manual ingot bonding method for a 12-inch semiconductor wafer, comprising the following preparation steps: S1, marking the circle center of an end face on the end face of a seed crystal end of an ingot (9), and recording same as point A; S2, horizontally placing the ingot (9) on an X-ray device in a mode that the end face of the seed crystal end faces outwards, turning on an X-ray emission source (2), and measuring, in combination with an X-ray detector (3), deflection angles α and β required for the bonding of the ingot (9); S3, bonding a resin sheet (4) and the ingot (9), and finely adjusting the angle β before an adhesive is cured such that the angle β is equal to a previously measured value; and S4, adjusting an angle α orientation apparatus such that an orientation plate (7) of the angle α orientation apparatus is adjusted to a deflection position of the angle α, and then bonding the ingot (9) on a workpiece steel plate (8). By using the method, the measurement accuracy of the crystal orientation is optimized from ±30' to within ±15', and the requirement of the 12-inch semiconductor wafer on the crystal orientation is satisfied.
Inventors:
ZHANG LIANG (CN)
CUI XIAOHUAN (CN)
LIU YUANTAO (CN)
HU XIAOLIANG (CN)
SHI KE (CN)
CUI XIAOHUAN (CN)
LIU YUANTAO (CN)
HU XIAOLIANG (CN)
SHI KE (CN)
Application Number:
PCT/CN2022/104108
Publication Date:
January 12, 2023
Filing Date:
July 06, 2022
Export Citation:
Assignee:
MCL ELECTRONIC MAT CO LTD (CN)
International Classes:
B24B27/00; B28D5/04; B24B27/06; B28D5/00; B28D7/00; B28D7/04; C30B33/00; C30B33/06; G01N23/20; G01N23/207; H01L21/30; H01L21/304
Foreign References:
| CN113787636A | 2021-12-14 | |||
| CN101071112A | 2007-11-14 | |||
| JP2015050215A | 2015-03-16 | |||
| CN102371633A | 2012-03-14 | |||
| CN209566368U | 2019-11-01 | |||
| TWM549782U | 2017-10-01 | |||
| CN102490279A | 2012-06-13 | |||
| JP2006242970A | 2006-09-14 | |||
| US5857454A | 1999-01-12 |
Other References:
LI ZHEN, XU CHAOHUI, WANG QUN FU, XIANG: "Research on Wafers' Crystal Orientation in Machining Process by Multi-wires Saw", EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING, vol. 42, no. 11, 20 November 2013 (2013-11-20), XP093020531, ISSN: 1004-4507
ZHENG JIE, CAO ZI, ZHAO ERJING, CAI LIYAN, AN RUIYANG, SU BING, HE YU, LU YICHEN: "Exploration of the Method for Measuring the Degree of Crystallographic Deviation of Silicon Wafers", INDUSTRIAL & SCIENCE TRIBUNE, vol. 18, no. 7, 1 April 2019 (2019-04-01), pages 72 - 73, XP093020529, ISSN: 1673-5641
YANG CHUNYING: "Study on Semiconductor Orientation Process", EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING, vol. 45, no. 9, 15 September 2016 (2016-09-15), pages 25 - 27, XP093020511, ISSN: 1004-4507
YANG CHUNYING (: "Principle and Method of Notch Groove Crystal Orientation Test", EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING, vol. 46, no. 6, 20 December 2017 (2017-12-20), pages 28 - 29, XP093020503, ISSN: 1004-4507
ZHENG JIE, CAO ZI, ZHAO ERJING, CAI LIYAN, AN RUIYANG, SU BING, HE YU, LU YICHEN: "Exploration of the Method for Measuring the Degree of Crystallographic Deviation of Silicon Wafers", INDUSTRIAL & SCIENCE TRIBUNE, vol. 18, no. 7, 1 April 2019 (2019-04-01), pages 72 - 73, XP093020529, ISSN: 1673-5641
YANG CHUNYING: "Study on Semiconductor Orientation Process", EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING, vol. 45, no. 9, 15 September 2016 (2016-09-15), pages 25 - 27, XP093020511, ISSN: 1004-4507
YANG CHUNYING (: "Principle and Method of Notch Groove Crystal Orientation Test", EQUIPMENT FOR ELECTRONIC PRODUCTS MANUFACTURING, vol. 46, no. 6, 20 December 2017 (2017-12-20), pages 28 - 29, XP093020503, ISSN: 1004-4507
Attorney, Agent or Firm:
ZHENGZHOU YUDING KNOWLEDGE AGENCY (GENERAL PARTNERSHIP) (CN)
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