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Title:
MAGNETORESISTANCE EFFECT ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/137284
Kind Code:
A1
Abstract:
This magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy in which an additional element is added to a Heusler alloy, the additional element being any one or more of the elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.

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Inventors:
NAKADA KATSUYUKI (JP)
INUBUSHI KAZUUMI (JP)
ICHIKAWA SHINTO (JP)
Application Number:
PCT/JP2020/047677
Publication Date:
June 30, 2022
Filing Date:
December 21, 2020
Export Citation:
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Assignee:
TDK CORP (JP)
International Classes:
H01F10/16; H01F10/32; H01L21/8239; H01L27/105; H01L43/08
Domestic Patent References:
WO2017208653A12017-12-07
WO2018061710A12018-04-05
Foreign References:
JP2019201095A2019-11-21
JP2019021751A2019-02-07
JP2017097935A2017-06-01
Attorney, Agent or Firm:
TANAI Sumio et al. (JP)
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