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Title:
MAGNETORESISTANCE EFFECT DEVICE AND MAGNETISM SENSOR USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2003/100877
Kind Code:
A1
Abstract:
A magnetoresistance effect device (1) comprising a semiconductor region (2) having a surface with a large number of separate metal particles (3) of not more than 100 µm in size provided thereon, a semiconductor or semi−metal cap layer (4) covering the semiconductor region, a plurality of electrodes (5) provided separately from each other on the surface of the cap layer. This magnetoresistance effect device (1) produces strong magnetoresistance effect at room temperature, and consequently, it is highly sensitive to a magnetic field. The device can be manufactured in a simple manufacturing process, and formed of a magnetoresistant material easily compatible with a semiconductor manufacturing process. A magnetism sensor comprising such a magnetoresistance effect device (1) has various kinds of excellent characteristics.

Inventors:
AKINAGA HIROYUKI (JP)
OZIMA MASAHARU (JP)
MIZUGUCHI MASAKI (JP)
Application Number:
PCT/JP2002/005070
Publication Date:
December 04, 2003
Filing Date:
May 24, 2002
Export Citation:
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Assignee:
NAT INST OF ADVENCED IND SCIEN (JP)
AKINAGA HIROYUKI (JP)
OZIMA MASAHARU (JP)
MIZUGUCHI MASAKI (JP)
International Classes:
G01R33/09; H01F10/193; H01L43/08; (IPC1-7): H01L43/08; G01R33/09; G11B5/39; H01F10/08
Foreign References:
JP2000340425A2000-12-08
JP2001108951A2001-04-20
US4288708A1981-09-08
JP2002164589A2002-06-07
Other References:
AKINAGA H. ET AL.: "Room-temperature thousandfold magnetoresis tance change in MnSb granular films: magnetoresistive switch effect", APLLIED PHYSICS LETTERS, vol. 76, no. 3, 17 January 2000 (2000-01-17), pages 357 - 359, XP000919623
AKINAGA H. ET AL.: "Room-temperature photoinduced magnetoresis tance effect in GaAs including MnSb nanomagnets", APPLIED IN PHYSICS LETTERS, vol. 76, no. 18, 1 May 2000 (2000-05-01), pages 2600 - 2602, XP000950534
Attorney, Agent or Firm:
Fukuda, Kenzo (6-13 Nishishinbashi 1-chom, Minato-ku Tokyo, JP)
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