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Title:
III-NITRIDE-BASED SEMICONDUCTOR PACKAGED STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/082224
Kind Code:
A1
Abstract:
A III-nitride-based semiconductor packaged structure includes a lead frame, a first adhesive layer, a III-nitride-based die, a second adhesive layer, and a first conductive trace. The lead frame includes a die paddle and a lead. The first adhesive layer is disposed over the die paddle. The III-nitride-based die is disposed over the first adhesive layer. The second adhesive layer is disposed over the III-nitride-based die. The first conductive trace electrically connects the III-nitride-based die to the lead, in which the first conductive trace extends from a position above the III-nitride-based die to a position above the lead and has an extending path turning twice.

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Inventors:
YAO WEIGANG (CN)
Application Number:
PCT/CN2022/126502
Publication Date:
April 25, 2024
Filing Date:
October 20, 2022
Export Citation:
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Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L23/31; H01L21/60; H01L23/495
Foreign References:
CN111799233A2020-10-20
CN103367271A2013-10-23
CN107492528A2017-12-19
CN114442010A2022-05-06
CN110611027A2019-12-24
CN106910730A2017-06-30
US20010048151A12001-12-06
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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