HOMOEPITAXIAL THIN FILM, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREOF

Title:

HOMOEPITAXIAL THIN FILM, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREOF

Document Type and Number:

WIPO Patent Application WO/2024/075690

Kind Code:

A1

Abstract:

In order to form a homoepitaxial thin film on the surface, which corresponds to LiNbO3 single crystal or LiTaO3 single crystal, of a substrate (2), the same composition as the single crystal is deposited on the surface, which corresponds to LiNbO3 single crystal or LiTaO3 single crystal, of the substrate by high frequency sputtering. A manufacturing apparatus (1) comprises a chamber (11) and a high frequency power source for supplying high frequency power to a target (121) disposed inside the chamber, wherein a sputter electrode (12) is disposed such that the surface normal (PL1) of the target is offset from the substrate placed at a film formation position and the surface normal (PL1) of the target is inclined by 15-75° with respect to the surface normal (PL2) of the substrate.

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Inventors:

INASE YOSUKE (JP)
SAITO SUGURU (JP)
ENDO MITSUHITO (JP)
MIYAZAKI TOSHIYA (JP)

Application Number:

PCT/JP2023/035907

Publication Date:

April 11, 2024

Filing Date:

October 02, 2023

Export Citation:

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Assignee:

SHINCRON CO LTD (JP)

International Classes:

C30B23/08; C23C14/08; C23C14/34; C30B29/30

Foreign References:

JPS645999A	1989-01-10
JPH04170396A	1992-06-18
JP2020136809A	2020-08-31
JP2021127270A	2021-09-02
JP2010077452A	2010-04-08
JP2013249539A	2013-12-12

Attorney, Agent or Firm:

TOKOSHIE PATENT FIRM (JP)

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