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Title:
HIGH-FREQUENCY SEMICONDUCTOR PACKAGE
Document Type and Number:
WIPO Patent Application WO/2024/084556
Kind Code:
A1
Abstract:
A ground terminal (11b), first to third ground patterns (11a, 21a, 21b), first and second ground via holes (12b, 22), and a third connection member (25) constitute an electromagnetic shield structure that surrounds a signal terminal (14b), first and second signal patterns (14a, 24), a first signal via hole (12a), a semiconductor chip (103), and first and second connection members (26a, 26b).

Inventors:
SAITO TETSUNARI (JP)
ABE SHUNICHI (JP)
Application Number:
PCT/JP2022/038656
Publication Date:
April 25, 2024
Filing Date:
October 18, 2022
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/12
Domestic Patent References:
WO2010026990A12010-03-11
WO2022070384A12022-04-07
WO2012140934A12012-10-18
WO2020054004A12020-03-19
Foreign References:
JP2011198866A2011-10-06
JP2004172187A2004-06-17
JP2006514438A2006-04-27
Attorney, Agent or Firm:
TAKADA, TAKAHASHI & PARTNERS (JP)
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