Title:
HIGH FREQUENCY CIRCUIT AND COMMUNICATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/189276
Kind Code:
A1
Abstract:
A high frequency circuit (1) comprises: a filter (11) having a passband including an SDL first band and an SDL second band; and a low noise amplifier (73) connected to the filter (11).
Inventors:
ONO ATSUSHI (JP)
HITOMI SHINYA (JP)
MORI HIROTSUGU (JP)
HITOMI SHINYA (JP)
MORI HIROTSUGU (JP)
Application Number:
PCT/JP2023/008527
Publication Date:
October 05, 2023
Filing Date:
March 07, 2023
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H04B1/00; H04B1/40
Domestic Patent References:
| WO2020116460A1 | 2020-06-11 | |||
| WO2007129716A1 | 2007-11-15 |
Foreign References:
| JP2020195119A | 2020-12-03 | |||
| US20170294947A1 | 2017-10-12 | |||
| CN112929039A | 2021-06-08 | |||
| US20110319035A1 | 2011-12-29 | |||
| US20140342678A1 | 2014-11-20 | |||
| US20190273314A1 | 2019-09-05 |
Other References:
ANONYMOUS: "LTE frequency bands - Wikipedia", 31 January 2022 (2022-01-31), XP093095579, Retrieved from the Internet
ANONYMOUS: "5G NR frequency bands - Wikipedia", 25 January 2022 (2022-01-25), XP093095580, Retrieved from the Internet
ANONYMOUS: "5G NR frequency bands - Wikipedia", 25 January 2022 (2022-01-25), XP093095580, Retrieved from the Internet
Attorney, Agent or Firm:
YOSHIKAWA, Shuichi et al. (JP)
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