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Title:
HIGH-ETCHING-RESISTANCE SILICON-CONTAINING MOLECULAR GLASS PHOTORESIST COMPOUND, AND PREPARATION METHOD THEREFOR AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2024/087158
Kind Code:
A1
Abstract:
The preset invention belongs to the technical field of lithography, and particularly relates to a high-etching-resistance silicon-containing molecular glass photoresist compound, and a preparation method therefor and the use thereof. The compound provided in the present invention is concise in terms of molecular structure, controllable in terms of molecular weight and simple in terms of synthesis steps, has relatively high thermal stability, does not precipitate during baking, and is unlikely to denature during photoetching; and the provided negative molecular glass photoresist has relatively good film-forming properties and relatively high thermal stability, is unlikely to denature during storage, and has low viscosity and thus is not required to be diluted with an extra solvent during use. The photoresist, which is prepared from the compound, can form a uniform film on a substrate by means of a spin coating method, and the formula thereof can be used in modern lithography techniques such as 365-nm lithography, 248-nm lithography, 193-nm lithography, extreme ultraviolet lithography, and electron beam lithography. By means of electron beam exposure and development, an exposure pattern has relatively high contrast, good resolution and relatively good sensitivity.

Inventors:
YANG GUOQIANG (CN)
ZHANG SILIANG (CN)
GUO XUDONG (CN)
HU RUI (CN)
WANG SHUANGQING (CN)
Application Number:
PCT/CN2022/128209
Publication Date:
May 02, 2024
Filing Date:
October 28, 2022
Export Citation:
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Assignee:
INST CHEMISTRY CAS (CN)
International Classes:
C07F7/02; C07F7/04; C07F7/06; C07F7/08; C07F7/18; G03F7/004; G03F7/075
Domestic Patent References:
WO2022032945A12022-02-17
WO2020259126A12020-12-30
Foreign References:
CN114075155A2022-02-22
CN112142769A2020-12-29
CN110032040A2019-07-19
CN108147983A2018-06-12
CN108084028A2018-05-29
CN104914672A2015-09-16
CN104412162A2015-03-11
CN103304385A2013-09-18
US6190837B12001-02-20
Attorney, Agent or Firm:
BEIJING ORIGINTELLIGENCE IP LAW FIRM (CN)
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