Title:
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/082655
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are a high electron mobility transistor device and a manufacturing method therefor. The device (100) has a structural unit (10) or at least two structural units (10), which are repeatedly arranged in a first direction. Each structural unit (10) comprises a source electrode (15); a drain electrode (17); a gate electrode (16); and a substrate layer (11), a nucleation layer (12), a buffer layer (13) having a bisector section (20) that is perpendicular to the first direction and is parallel to a second direction, and a barrier layer (14), which are sequentially stacked in the second direction, wherein the buffer layer (13) comprises a plurality of laminated layers (131, 132, 133), which are sequentially stacked in the second direction, the lengths of the laminated layers (131, 132, 133) in the first direction being gradually reduced, and each laminated layer (131, 132, 133) having an exposed surface (1310, 1320, 1330), which faces away from the substrate layer (11) and is used for stacking one barrier layer (14). The source electrode (15), the gate electrode (16) and the drain electrode (17) are spaced apart from each other on all the barrier layers (14) in a third direction in a stacked manner, every two of the first direction, the second direction and the third direction being perpendicular to each other. The substrate layers (11), the nucleation layers (12), the buffer layers (13), the source electrodes (15), the gate electrodes (16) and the drain electrodes (17) of two adjacent structural units (10) are correspondingly connected at portions where the components abut against each other.
Inventors:
YE RAN (CN)
CAI XIAOLONG (CN)
DU CHENGLIN (CN)
ZHANG YU (CN)
LIU HAIJUN (CN)
DUAN XIANGYANG (CN)
CAI XIAOLONG (CN)
DU CHENGLIN (CN)
ZHANG YU (CN)
LIU HAIJUN (CN)
DUAN XIANGYANG (CN)
Application Number:
PCT/CN2023/099447
Publication Date:
April 25, 2024
Filing Date:
June 09, 2023
Export Citation:
Assignee:
ZTE CORP (CN)
International Classes:
H01L29/778; H01L21/335
Foreign References:
| CN111727507A | 2020-09-29 | |||
| CN112825329A | 2021-05-21 | |||
| CN111213244A | 2020-05-29 | |||
| CN111201609A | 2020-05-26 | |||
| CN107516667A | 2017-12-26 |
Attorney, Agent or Firm:
JIAQUAN IP LAW (CN)
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