Title:
HEATING PART OF SILICON SINGLE CRYSTAL MANUFACTURING DEVICE, CONVECTION PATTERN CONTROL METHOD FOR SILICON MELT, SILICON SINGLE CRYSTAL MANUFACTURING METHOD, SILICON WAFER MANUFACTURING METHOD, SILICON SINGLE CRYSTAL MANUFACTURING DEVICE, AND CONVECTION PATTERN CONTROL SYSTEM FOR SILICON MELT
Document Type and Number:
WIPO Patent Application WO/2022/137830
Kind Code:
A1
Abstract:
A heating part (1) heats a silicon melt (M) within a quartz crucible (4B). This heating part (1) has a heat-procuding part (11) that is integrally molded in a cylindrical shape, and four power supply parts (12A-12D) that supply power to the heat-producing part (11). When the heating part (1) is divided in half by a virtual surface (VS) that is along the center axis (CA) of the heat-producing part (11), is perpendicular to the heat-producing part (11), and is parallel to a magnetic force line at the center of a horizontal magnetic field applied to the silicon melt (M), the heat production quantity of a first heating region (1A) that is located on one side of the virtual surface (VS) and the heat production quantity of a second heating region (1B) that is located on the other side of the virtual surface (VS) are configured as different values.
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Inventors:
YOKOYAMA RYUSUKE (JP)
SUGIMURA WATARU (JP)
SUGIMURA WATARU (JP)
Application Number:
PCT/JP2021/040759
Publication Date:
June 30, 2022
Filing Date:
November 05, 2021
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; C30B15/14; C30B30/04
Domestic Patent References:
| WO2019167989A1 | 2019-09-06 |
Foreign References:
| JPH04260687A | 1992-09-16 | |||
| JP2001039792A | 2001-02-13 | |||
| JPH09227286A | 1997-09-02 | |||
| JP2004315292A | 2004-11-11 |
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (JP)
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