Title:
HARD MASK STRUCTURE FOR INTEGRATED CIRCUIT MANUFACTURING, AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/082322
Kind Code:
A1
Abstract:
The present disclosure relates to the technical field of pattern transfer in a chip manufacturing process. Provided are a hard mask structure for integrated circuit manufacturing, and a method for manufacturing an integrated circuit device. The hard mask structure comprises a first hard mask layer and a second hard mask layer, which are stacked from top to bottom, wherein the first hard mask layer is used for forming a noble metal on the surface thereof and serves as a pattern transfer sacrificial layer, and the second hard mask layer serves as a protection layer and is used for etching the material of a pattern to be transferred; the first hard mask layer and the second hard mask layer are made of different materials, and can both tolerate the corrosion of a strong oxidizing chemical liquid which is used for removing the noble metal; and the second hard mask layer can tolerate the corrosion of a chemical liquid which is used for removing the first hard mask layer by means of wet etching, and a preset corrosion rate selection ratio of the second hard mask layer for the first hard mask layer is ensured. The present disclosure can avoid the killing of a device by means of noble metal ions, such that a noble metal thin film can be used for manufacturing large-scale integrated circuits.
Inventors:
YANG TAO (CN)
LI JUNJIE (CN)
HE XIAOBIN (CN)
GAO JIANFENG (CN)
WEI YAYI (CN)
DAI BOWEI (CN)
WANG WENWU (CN)
LI JUNJIE (CN)
HE XIAOBIN (CN)
GAO JIANFENG (CN)
WEI YAYI (CN)
DAI BOWEI (CN)
WANG WENWU (CN)
Application Number:
PCT/CN2022/127555
Publication Date:
April 25, 2024
Filing Date:
October 26, 2022
Export Citation:
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L21/027
Foreign References:
| KR20090067373A | 2009-06-25 | |||
| KR20000045446A | 2000-07-15 | |||
| CN101078874A | 2007-11-28 | |||
| KR20050001104A | 2005-01-06 |
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
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