Title:
GROUP III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE AND BONDED SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/157547
Kind Code:
A1
Abstract:
Provided is a group III element nitride semiconductor substrate that is equipped with a first surface and a second surface and wherein the occurrence of cracks and breakage is suppressed. A group III element nitride semiconductor substrate according to an embodiment of the present invention is equipped with a first surface and a second surface. The group III element nitride semiconductor substrate has a thickness of 200 μm or more, and the number of times N switching between light and dark occurs within a line segment with a length of 2 mm drawn in a crossed nicols image obtained by observation with a polarizing microscope of a region including a central section of the surface of the first surface is 30 or more.
Inventors:
SAITO AYUMI (JP)
SUGIYAMA TOMOHIKO (JP)
SUGIYAMA TOMOHIKO (JP)
Application Number:
PCT/JP2023/001469
Publication Date:
August 24, 2023
Filing Date:
January 19, 2023
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/38; C30B19/02; C30B33/06; H01L21/02
Domestic Patent References:
| WO2017145802A1 | 2017-08-31 | |||
| WO2015045654A1 | 2015-04-02 | |||
| WO2015012218A1 | 2015-01-29 |
Attorney, Agent or Firm:
MOMII Takafumi (JP)
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