Title:
FILM FORMING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/054623
Kind Code:
A1
Abstract:
This film forming method comprises a first step and a second step. In the first step, an aluminum oxide layer is formed on a substrate by means of an aluminum-containing precursor and an oxidant. In the second step, a metal oxide layer is formed on the substrate by means of an oxidant and a precursor containing a first metal that is different from aluminum. With respect to this film forming method, if ε1 is the relative dielectric constant of a first metal oxide alone, and X is the molar ratio of the fist metal to all metals in a metal-containing aluminum oxide layer, the formed metal-containing aluminum oxide layer satisfies the conditions (1) or (2) described below. (1): X > 1/3 and ε1 < 25 × X/(3X – 1)
(2): X ≤ 1/3
Inventors:
SHIMOMURA KOUJI (JP)
KATO YOSHIHIRO (JP)
HASEGAWA TOSHIO (JP)
SUZUKI JUNYA (JP)
KATO YOSHIHIRO (JP)
HASEGAWA TOSHIO (JP)
SUZUKI JUNYA (JP)
Application Number:
PCT/JP2021/031701
Publication Date:
March 17, 2022
Filing Date:
August 30, 2021
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/31; C23C16/40; H01L21/316
Foreign References:
| JP2005534163A | 2005-11-10 | |||
| JP2005072490A | 2005-03-17 | |||
| JP2006245194A | 2006-09-14 | |||
| JP2011129877A | 2011-06-30 | |||
| JP2018190753A | 2018-11-29 | |||
| JP2018085502A | 2018-05-31 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
Download PDF: