Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
FILM FORMING METHOD, FILM FORMING DEVICE, SUSCEPTOR, AND α-GALLIUM OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2024/043134
Kind Code:
A1
Abstract:
The present invention is a film forming method comprising: a step of forming a raw material mist by atomizing a raw material solution; a step of forming a gas mixture by mixing the raw material mist and a carrier gas; a step of placing a substrate on a placement portion of a susceptor; a step of forming a film due to a thermal reaction on the substrate, by supplying the gas mixture from an atomization means to the substrate; and a step of discharging the gas mixture by a discharging means after forming the film, the film forming method being characterized in that, in the step of forming the film due to a thermal reaction on the substrate by supplying the gas mixture from the atomization means to the substrate, at least a portion of the gas mixture is supplied from a flat portion that is adjacent to the placement portion and has a surface roughness of 200 μm or less to the surface of the substrate. Thereby, a film forming method is provided that makes it possible to manufacture a high-quality film on a large-diameter substrate surface in a uniform and stable manner.

Inventors:
HASHIGAMI HIROSHI (JP)
Application Number:
PCT/JP2023/029452
Publication Date:
February 29, 2024
Filing Date:
August 14, 2023
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
H01L21/205; C23C16/40; C30B25/02; C30B29/16; H01L21/208; H01L21/365; H01L21/368
Domestic Patent References:
WO2020194802A12020-10-01
WO2022215621A12022-10-13
Foreign References:
JP2013028480A2013-02-07
JP2005197275A2005-07-21
JP2016027636A2016-02-18
JP2020113570A2020-07-27
JP2022093208A2022-06-23
Other References:
KIM KYOUNG-HO, HA MINH-TAN, KWON YONG-JIN, LEE HEESOO, JEONG SEONG-MIN, BAE SI-YOUNG: "Growth of 2-Inch α-Ga 2 O 3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, ELECTROCHEMICAL SOCIETY, INC., US, vol. 8, no. 7, 1 January 2019 (2019-01-01), US , pages Q3165 - Q3170, XP093143507, ISSN: 2162-8769, DOI: 10.1149/2.0301907jss
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
Download PDF: