FILM FORMATION DEVICE

WIPO Patent Application WO/2022/102355

A1

Provided is a film formation device having a high rate of operation. The present invention is provided with: a film formation chamber (2) in which a predetermined film formation atmosphere can be set and in which at least a film formation material M and a subject (S) on which a film is to be formed are provided; a Haas liner (23) that is provided inside the film formation chamber (2), and that houses the film formation material M; a heating source (24) that is provided inside the film formation chamber (2), and that heats the film formation material (M) housed in the Haas liner (23); and a material-feeding chamber (3) which has a material-loaded part (35) to be loaded with a film formation material (M) to be fed to the Haas liner (23), which is coupled to the film formation chamber (2) through a communication path (36) having a partition valve (37), and in which a predetermined pressure atmosphere can be set. When the film formation material (M) is to be fed, in a state where a film formation atmosphere is set in the film formation chamber (2), thereafter, the inside the material-feeding chamber (3) is set to the predetermined pressure atmosphere, the partition valve (37) is opened, and the film formation material (M) loaded in the material-loaded part (35) is fed to the Haas liner (23) through the communication path (36).

IGARASHI MAKOTO (JP)
SAITO SUGURU (JP)
NONAKA YUYA (JP)

PCT/JP2021/038582

May 19, 2022

October 19, 2021

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SHINCRON CO LTD (JP)

C23C14/24

WO2017061481A1	2017-04-13
WO2011071064A1	2011-06-16

JP2014198861A	2014-10-23
JP2020063476A	2020-04-23
JPH0415739B2	1992-03-18

TOKOSHIE PATENT FIRM (JP)

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