Title:
FIELD-EFFECT TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2024/084652
Kind Code:
A1
Abstract:
A field-effect transistor according to the present invention comprises: a gate (13) formed from a plurality of intersecting electrode wires; a plurality of source electrodes (11); a plurality of drain electrodes (12); and a feed section (14) connected to one end of at least one of the plurality of electrode wires, wherein the plurality of source electrodes and the plurality of drain electrodes are disposed alternately in each of areas delimited by the plurality of electrode wires. As a result, the present invention can provide a field-effect transistor having a low gate resistance and capable of high-power and high-frequency operation with large current drive capability.
Inventors:
SASAKI TARO (JP)
TSUTSUMI TAKUYA (JP)
NAKAJIMA FUMITO (JP)
TSUTSUMI TAKUYA (JP)
NAKAJIMA FUMITO (JP)
Application Number:
PCT/JP2022/039097
Publication Date:
April 25, 2024
Filing Date:
October 20, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L29/812; H01L21/338; H01L29/778
Domestic Patent References:
| WO2014041731A1 | 2014-03-20 | |||
| WO2012111393A1 | 2012-08-23 |
Foreign References:
| JPS5080364U | 1975-07-11 | |||
| JPH09505689A | 1997-06-03 | |||
| US20150243744A1 | 2015-08-27 | |||
| JPH0637308A | 1994-02-10 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
Download PDF:
Previous Patent: SEAT SYSTEM AND SEAT HOLDER USED IN SEAT SYSTEM
Next Patent: SERVING ROBOT, SERVING SYSTEM, AND SERVING METHOD
Next Patent: SERVING ROBOT, SERVING SYSTEM, AND SERVING METHOD