FIELD EFFECT TRANSISTOR AND PREPARATION METHOD THEREFOR, AND POWER AMPLIFIER AND ELECTRONIC CIRCUIT

WIPO Patent Application WO/2022/257111

A1

Disclosed in the present application are a field effect transistor and a preparation method therefor, and a power amplifier and an electronic circuit. The field effect transistor comprises: an SiC substrate, a first AlN layer, a first GaN layer, a first AlGaN layer, a second GaN layer, a second AlGaN layer, a source electrode, a drain electrode and a gate electrode, wherein the SiC substrate, the first AlN layer, the first GaN layer, the first AlGaN layer, the second GaN layer and the second AlGaN layer are sequentially arranged in a stacked manner; and the source electrode, the drain electrode and the gate electrode are all arranged on the side of the second AlGaN layer that faces away from the second GaN layer. By means of the present application, a first GaN layer is inserted between a first AlN layer and a first AlGaN layer; since the difference between lattice constants of AlN and GaN is greater than that between lattice constants of AlN and AlGaN, the compressive stress introduced by a lattice mismatch is greater; and by means of a field effect transistor into which a first GaN layer is introduced, the tensile stress can be more effectively compensated, thereby ameliorating the problem of a relatively great warping degree faced by an epitaxial wafer in a field effect transistor.

LI WEN (CN)
XUE XIAOYONG (CN)
DUAN HUANTAO (CN)

PCT/CN2021/099712

December 15, 2022

June 11, 2021

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HUAWEI TECH CO LTD (CN)

H01L29/778; H01L29/205

US20170250273A1	2017-08-31
US20170250273A1	2017-08-31
CN101140947A	2008-03-12
CN108389894A	2018-08-10
CN103117294A	2013-05-22
US20100264461A1	2010-10-21

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